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Guangdong nong ye ke xue, ISSN 1004-874X, 2015, Volume 42, Issue 6, pp. 146 - 封3
Journal Article
Chinese physics B, ISSN 1674-1056, 2015, Volume 24, Issue 9, pp. 408 - 412
金 | Mg掺杂 | 欧姆接触 | 接触层 | 高镍 | p-GaN | 接触性能 | 深能级缺陷 | ohmic contact | transportation mechanism | p-type GaN | deep-level-defect band | Physics, Multidisciplinary | Physical Sciences | Physics | Science & Technology | Flow rate | Electrical resistivity | Gallium nitrides | Transportation | Contact resistance | Nickel | Magnesium | Contact
Journal Article
Chinese physics B, ISSN 1674-1056, 2015, Volume 24, Issue 11, pp. 389 - 392
复合 | Mg掺杂 | 欧姆接触 | 接触电阻率 | 接触层 | p-GaN | p型 | 带宽 | tunneling | Ohmic contact | growth conditions | compound contact layer | Physics, Multidisciplinary | Physical Sciences | Physics | Science & Technology | Alloying additive | Indium gallium nitrides | Electrical resistivity | Contact resistance | Nickel | Magnesium | Optimization | Contact
Journal Article
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