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Nano Letters, ISSN 1530-6984, 01/2017, Volume 17, Issue 1, pp. 559 - 564
Several approaches for growing III–V lasers on silicon were recently demonstrated. Most are not compatible with further integration, however, and rely on thick... 
heteroepitaxy | metal organic chemical vapor phase epitaxy | semiconductor laser | silicon photonics | DFB laser array | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | INP | CHEMISTRY, MULTIDISCIPLINARY | III-V
Journal Article
Journal Article
Digest of Technical Papers - Symposium on VLSI Technology, ISSN 0743-1562, 10/2018, Volume 2018-, pp. 221 - 222
Conference Proceeding
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2007, Volume 90, Issue 3, pp. 032103 - 032103-3
The effective work function (WF) of Ni 3 Si 2 was evaluated on Hf Si x O y and Si O 2 dielectrics. Ni 3 Si 2 forms, in thin film Ni-Si diffusion couples with... 
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2008, Volume 93, Issue 26, pp. 263502 - 263502-3
The mechanism governing threshold voltage ( V t ) modulation in NiSi/SiON n -channel metal-oxide-semiconductor field-effect transistors when doping with... 
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2008, Volume 104, Issue 4, pp. 044512 - 044512-7
A significant difference in the magnitude of the threshold voltage ( V t ) reduction achieved by lanthanum oxide ( La 2 O 3 ) incorporation in ultra-thin... 
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2007, Volume 28, Issue 11, pp. 957 - 959
This letter reports a novel approach to achieve low threshold voltage (Vt) Ni-fully-silicide (FUSI) nMOSFETs with SiON dielectrics. By using a dysprosium-oxide... 
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2007, Volume 28, Issue 11, pp. 980 - 983
This letter reports that the effective work function (eWF) of Ni-Fully Silicided (Ni-FUSI) devices with HfSiON gate dielectrics can be modulated toward the... 
Ni-Fully Silicided (Ni-FUSI) metal gates | Process control | High K dielectric materials | low- V_{T} CMOS | Chemical vapor deposition | MOS devices | High-K gate dielectrics | Hafnium | CMOS technology | Silicon | Gate leakage | high- k dielectrics | Cap layers | Dielectric devices
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2007, Volume 28, Issue 11, pp. 980 - 983
This letter reports that the effective work function (eWF) of Ni-Fully Silicided (Ni-FUSI) devices with HfSiON gate dielectrics can be modulated toward the... 
CMOS | Capping | Nickel | Dielectrics | Silicates | Devices | Deposition | Gates
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2007, Volume 28, Issue 7, pp. 656 - 658
In this letter, we report that by using a thin dysprosium oxide (Dy@@d2@O@@d3@)cap layer (approx. 1-nm thick) on top of SiON host dielectrics, the threshold... 
Journal Article
Astronomy and Astrophysics, ISSN 0004-6361, 2012, Volume 546, p. A37
Journal Article
Proceedings of the International Astronomical Union, ISSN 1743-9213, 11/2016, Volume 12, Issue S329, pp. 436 - 436
AbstractThe formation of massive stars remains one of the most intriguing questions in astrophysics today. The main limitations result from the difficulty to... 
O stars | Astrophysics | Imaging | Chip formation | Nebulae | Star & galaxy formation | Massive stars
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 01/2007, Volume 28, Issue 11
This letter reports a novel approach to achieve low threshold voltage (Vt) Ni-fully-silicide (FUSI) nMOSFETs with SiON dielectrics. By using a dysprosium-oxide... 
Electrodes | Capacitance | Activation | Nickel | Threshold voltage | Dielectrics | Devices | Silicon oxynitride
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2008, Volume 29, Issue 5, pp. 430 - 433
In this letter, we report that by employing the La 2 O 3 /SiO x interfacial layer between HfLaO (La = 10%) high- and Si channel, the Ta 2 C metal-gated... 
Temperature distribution | low- V_{T} n-MOSFETs | Crystallization | Microelectronics | Electrodes | Degradation | hbox{Ta}_{2}\hbox{C} | MOSFET circuits | CMOS technology | hbox{La}_{2}\hbox{O}_{3}/ \hbox{SiO}_{x} interfacial layer (IL) | HfLaO | Hafnium compounds | Gate leakage | Dielectric devices
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2007, Volume 28, Issue 11, pp. 957 - 959
This letter reports a novel approach to achieve low threshold voltage (Vt) Ni-fully-silicide (FUSI) nMOSFETs with SiON dielectrics. By using a dysprosium-oxide... 
Dysprosium-oxide (\hbox{Dy}_{2}\hbox{O}_{3}) cap layer | Temperature | low V_{t} nMOSFETs | High K dielectric materials | MOSFETs | Electrodes | High-K gate dielectrics | Degradation | SiON | Capacitance | Threshold voltage | Leakage current | Ni-FUlly-SIlicide (FUSI) | Dielectric devices
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2007, Volume 28, Issue 7, pp. 656 - 658
In this letter, we report that by using a thin dysprosium oxide (Dy 2 O 3 )cap layer (~1-nm thick) on top of SiON host dielectrics, the threshold voltage (V t... 
TaN | CMOS process | Microelectronics | dysprosium oxide (\hbox{Dy}_{2} \hbox{O}_{3}) | n-MOSFETs | Degradation | Fabrication | SiON | DySiON | MOSFET circuits | Semiconductor device manufacture | CMOS technology | Threshold voltage | Gate leakage | MIPS | Dielectric devices
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 01/2007, Volume 28, Issue 7
In this letter, we report that by using a thin dysprosium oxide (Dy sub(2)O sub(3))cap layer (~1-nm thick) on top of SiON host dielectrics, the threshold... 
Equivalence | Oxides | Dysprosium | Devices | Cross sections | Channels | Gates | Silicon oxynitride
Journal Article
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