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IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2017, Volume 64, Issue 3, pp. 805 - 808
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 01/2017, Volume 121, Issue 2, p. 25106
Low temperature (LT) flow modulation epitaxy (FME) or “pulsed” growth was successfully used to prevent magnesium from Metalorganic Chemical Vapor Deposition... 
ACTIVATION | PHYSICS, APPLIED | CHEMICAL-VAPOR-DEPOSITION | GAN | FLOW MODULATION EPITAXY | MOLECULAR-BEAM EPITAXY | GAAS | FIELD-EFFECT TRANSISTORS | Usage | Optical properties | Analysis | Silicon | Chemical vapor deposition | Magnesium compounds | Semiconductor doping | Electric properties
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 01/2017, Volume 121, Issue 2
Low temperature (LT) flow modulation epitaxy (FME) or “pulsed” growth was successfully used to prevent magnesium from Metalorganic Chemical Vapor Deposition... 
Organic chemistry | Doping | Metalorganic chemical vapor deposition | Magnesium | Epitaxial growth
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 12/2016, Volume 37, Issue 12, pp. 1601 - 1604
In this letter, a novel device design to achieve both low ON-resistance and enhancement mode operation in a vertical GaN FET is demonstrated. In the... 
MOSFET | in-situ oxide | Logic gates | Electron mobility | Trench MOSFET | Threshold voltage | Dielectrics | low on-resistance | Gallium nitride | MOCVD | GaN interlayer | vertical GaN FET | Field effect transistors | Metal oxide semiconductors | Metalorganic chemical vapor deposition
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2018, Volume 39, Issue 2, pp. 316 - 316
In the above paper [1] , the fifth author’s name was printed incorrectly. The correct name is Junqian Liu. 
Interlayers | Substrates
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2018, Volume 39, Issue 6, pp. 863 - 865
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2018, Volume 39, Issue 7, pp. 1030 - 1033
This letter reports on the dynamic R_{\text{ON}} performance of large-area GaN... 
Performance evaluation | Fabrication | MOSFET | Gallium nitride (GaN) | TMAH wet etch | Logic gates | OG-FET | dynamic Ron | Gallium nitride | bulk GaN | Substrates | vertical transistor | MOSFETs
Journal Article
01/2018, ISBN 0438896645
Gallium Nitride has gained prominence in the field of power electronics due to its high bandgap, high critical electric field, high mobility and high... 
Electrical engineering | Materials science | Physics
Dissertation
Applied Physics Letters, ISSN 0003-6951, 12/2017, Volume 111, Issue 23
Blanket regrowth studies were performed on GaN trenches with varying widths and optimized for two types of devices—those that required the profile of the... 
Interlayers | Trenches | Carrier gases | MOSFETs
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2018, Volume 39, Issue 6, pp. 863 - 865
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2018, Volume 39, Issue 6, pp. 863 - 865
In this letter, we report a high-voltage metal-insulator-semiconductor gate trench current aperture vertical electron transistor using metal-organic chemical... 
Gallium nitride (GaN) | Logic gates | CAVET | Wide band gap semiconductors | Transistors | Gallium nitride | MOCVD | trench CAVET | Aluminum gallium nitride | Substrates | vertical transistor
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2018, Volume 39, Issue 5, pp. 711 - 714
We present a large-area in-situ oxide, GaN interlayer-based vertical trench MOSFET (OG-FET) with a metal organic chemical vapor deposition regrown 10-nm... 
MOSFET | Scanning electron microscopy | GaN MOSFET | Gallium nitride (GaN) | vertical MOSFET | Logic gates | Threshold voltage | power transistor | OG-FET | Gallium nitride | Substrates | vertical transistor
Journal Article
Journal of Oral and Maxillofacial Surgery, ISSN 0278-2391, 05/2019, Volume 77, Issue 5, pp. 994 - 999
The purpose was to assess the diagnostic accuracy of touch imprint cytology (TIC) compared with frozen section (FS) analysis as an intraoperative diagnostic... 
DIAGNOSIS | SENTINEL LYMPH-NODES | FINE-NEEDLE-ASPIRATION | DENTISTRY, ORAL SURGERY & MEDICINE | Medicine, Experimental | Medical research | Squamous cell carcinoma | Metastasis | Diagnosis
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2017, Volume 38, Issue 3, pp. 353 - 355
In this letter, we report on high breakdown voltage in situ oxide, GaN interlayer-based vertical trench MOSFETs (OG-FETs) on bulk GaN substrates. Following our... 
MOSFET | Electric breakdown | GaN | breakdown voltage | vertical MOSFET | Logic gates | trench MOSFET | GaN trench MOSFET | low on-resistance | Gallium nitride | MOCVD | Substrates | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2018, Volume 65, Issue 2, pp. 483 - 487
Journal Article
Applied Energy, ISSN 0306-2619, 10/2015, Volume 156, pp. 138 - 148
Superior spray behavior of fuels in internal combustion engines lead to improved combustion and emission characteristics therefore it is necessary to... 
Viscosity | Primary atomization | Cavitation | Biodiesel | Injector nozzle hole | COMBUSTION | ENGINES | ENERGY & FUELS | BEHAVIOR | FUEL ATOMIZATION CHARACTERISTICS | MODEL | BLENDS | ENGINEERING, CHEMICAL | PRESSURE | GEOMETRY
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 12/2016, Volume 37, Issue 12, pp. 1601 - 1604
In this letter, a novel device design to achieve both low ON-resistance and enhancement mode operation in a vertical GaN FET is demonstrated. In the... 
Trench MOSFET | low on-resistance | GaN interlayer | in-situ oxide | vertical GaN FET | TRANSISTORS | CHEMICAL-VAPOR-DEPOSITION | CAVET | LAYER | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
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