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Annals of Surgical Oncology, ISSN 1068-9265, 12/2018, Volume 25, Issue S3, pp. 932 - 933
Journal Article
Circulation journal : official journal of the Japanese Circulation Society, ISSN 1346-9843, 2015, Volume 79, Issue 3, pp. 592 - 599
Background: There is ongoing controversy over whether neural or peripheral factors are the predominant cause of hypertension. The closed-loop negative feedback... 
Hypertension | Equilibrium diagram | Norepinephrine | Sympathetic nervous activity | Phenylephrine | OXIDATIVE STRESS | ACTIVATION | CARDIAC & CARDIOVASCULAR SYSTEMS | ARTERIAL BAROREFLEX | CAROTID BARORECEPTOR STIMULATION | SINUS | BLOOD-PRESSURE | NERVE ACTIVITY | ROSTRAL VENTROLATERAL MEDULLA | REFLEX | NITRIC-OXIDE
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 11/2017, Volume 477, p. 12
Novel behavior in semiconductor hetero-epitaxial growth such as InAs/GaAs is systematically investi- gated using ab initlo-based approach incorporating... 
Temperature | Strain relaxation | Gallium arsenide | Surface chemistry | Atomic properties | Desorption | Indium arsenides | Strain | Studies | Adsorption | Molecular beam epitaxy | Dimers | Epitaxial growth
Journal Article
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 04/2019, Volume 511, pp. 89 - 92
Journal Article
The EMBO Journal, ISSN 0261-4189, 07/2014, Volume 33, Issue 14, pp. 1565 - 1581
Journal Article
physica status solidi (b), ISSN 0370-1972, 04/2018, Volume 255, Issue 4, pp. 1700241 - n/a
The growth mode of InAs/GaAs(110) is systematically investigated using our macroscopic theory with the aid of ab initio calculations that determine the... 
heteroepitaxy | strain relaxation | InAs | GaAs | semiconductors | growth modes | PHYSICS, CONDENSED MATTER | EPITAXIAL-GROWTH | STABILITY | INAS/GAASA | QUANTUM DOTS | MISFIT DISLOCATIONS | SHAPE | SURFACE | Gallium arsenide | Investigations
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 02/2020, Volume 532, p. 125410
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 09/2018, Volume 57, Issue 9, p. 98001
The stability of group-III nitrides on a N-polar AlN substrate with Al overlayers is theoretically investigated using an ab initio approach that yields the... 
Polarity | Interface stability | Gallium nitrides | Substrates | Aluminum nitride
Journal Article
Journal Article
Applied Physics Express, ISSN 1882-0778, 06/2018, Volume 11, Issue 6, p. 69201
Journal Article
SCIENTIFIC REPORTS, ISSN 2045-2322, 11/2019, Volume 9, Issue 1, pp. 1 - 7
Image-processing is an advantage of heads-up surgery and expected to facilitate ophthalmic surgeries. To evaluate image-processing quantitatively, we analyzed... 
COLOR-DIFFERENCE FORMULA | MULTIDISCIPLINARY SCIENCES | Light intensity | Image processing | Surgery | Color
Journal Article
physica status solidi (b), ISSN 0370-1972, 05/2018, Volume 255, Issue 5, pp. 1700446 - n/a
The crystal structure deformation path depending on lattice parameters and its energy barrier in group‐III nitrides are investigated by using... 
deformation | III‐nitride semiconductors | energy barriers | ionicity | hexagonal structure | density functional theory | III-nitride semiconductors | PSEUDOPOTENTIALS | PHYSICS, CONDENSED MATTER | HEXAGONAL BORON-NITRIDE | Nitrides | Structure | Investigations | Crystals
Journal Article
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