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Journal of materials chemistry. C, Materials for optical and electronic devices, ISSN 2050-7534, 08/2014, Volume 2, Issue 29, pp. 5787 - 5792
.... Nominal InAlN layers with similar growth conditions were prepared, and the change in unintended Ga content in the group III sublattice ranged from similar to 24% to similar to 12... 
THIN-FILMS | ORIGINS | PHYSICS, APPLIED | EPITAXIAL-GROWTH | MATERIALS SCIENCE, MULTIDISCIPLINARY | ALINN | UNINTENTIONAL INCORPORATION | LAYERS | GALLIUM | Diffraction | Reactors | Gallium nitrides | X-rays | Optoelectronic devices | Cleaning | High electron mobility transistors | Standards
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2016, Volume 120, Issue 8
Journal Article
Physical review. B, Condensed matter and materials physics, ISSN 1098-0121, 07/2007, Volume 76, Issue 3
...) films placed in close proximity (systematically adjusted by GaN cap layer thickness) to single inorganic [(Ga,In)N/GaN] quantum wells (QWs... 
PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | ENERGY-TRANSFER | BLUE | WELL | MATERIALS SCIENCE, MULTIDISCIPLINARY
Journal Article
Physical review. B, Condensed matter and materials physics, ISSN 1098-0121, 02/2008, Volume 77, Issue 5
Journal Article
International journal of morphology, ISSN 0717-9367, 03/2016, Volume 34, Issue 1, pp. 218 - 222
...) de todos los animales que fueron utilizadas como control (GC). Luego, irradiamos cada ATM con LBI (As-Ga-Al 904 nm... 
Rabbit | Temporomandibular joint | Animal model | Low-level laser | Cone-beam computed tomography | ANATOMY & MORPHOLOGY
Journal Article
Journal of crystal growth, ISSN 0022-0248, 01/2006, Volume 287, Issue 2, pp. 224 - 229
GaInSb samples have been grown by the Vertical Bridgman technique with alternating magnetic field in order to improve mixing of the rejected InSb in the melt.... 
A1. Solidification | A1. Characterization | B1. Alloys | B2. Semiconducting III-V materials | alloys | FLUID-FLOW | semiconducting III-V materials | solidification | CRYSTALLOGRAPHY | SEGREGATION | characterization
Journal Article
Solar energy, ISSN 0038-092X, 03/2020, Volume 198, pp. 490 - 498
•A system for manufacturing Cu(In,Ga)Se2 solar cells under vacuum was developed.•All layers required in a complete solar cell can be deposited in situ... 
Ga)Se2 | Pulsed evaporation | Cu(In | Sputtering | Thin-film photovoltaics | Solar cells | Industrial production | Customization | Absorbers | Copper indium gallium selenides | Calibration | High vacuum | Industrial development | Magnetrons | Vacuum | Photovoltaic cells | Technology transfer | Physical vapor deposition | Deposition
Journal Article
Solar energy, ISSN 0038-092X, 03/2020, Volume 198, pp. 490 - 498
We present the development of a small foot-print physical vapor deposition (PVD) system for in-situ deposition of all layers required in a complete Cu(In,Ga)Se-2 (CIGS) solar cell... 
FILMS | ENERGY & FUELS | Thin-film photovoltaics | Pulsed evaporation | Cu(In Ga)Se-2 | Sputtering
Journal Article
Physica status solidi. PSS-RRL. Rapid research letters, ISSN 1862-6270, 2019, Volume 13, Issue 9, p. 1900145
Large-scale industrial fabrication of Cu(In,Ga)Se-2 (CIGS) photovoltaic panels would benefit significantly if the buffer layer chemical bath deposition could be replaced by a cadmium-free dry vacuum process suitable for in-line production... 
THIN-FILMS | FILM SOLAR-CELL | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | BAND-OFFSET | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | LAYERS | interface recombination | sputter deposition | IMPACT | INTERFACE | buffer layer | Cu(In,Ga)Se-2 | Zn(O,S) | EFFICIENCY | CIGS solar cells
Journal Article
Journal of luminescence, ISSN 0022-2313, 06/2019, Volume 210, pp. 413 - 424
Al Ga N (x = 0.20) layers grown on (0001) sapphire substrates by metal organic chemical vapour deposition were implanted with terbium (Tb... 
Ion implantation | Photoluminescence | Yellow luminescence
Journal Article
Surface & coatings technology, ISSN 0257-8972, 12/2018, Volume 355, p. 55
In this work ion implantation effects in AlxGa1−xN alloys were investigated by ion beam analysis, namely, Rutherford backscattering spectrometry/channelling... 
Ion implantation | Crystal defects | Damage assessment | Heavy ions | Channeling | Backscattering | Xenon | Analytical techniques | Aluminum alloys | Recoil | Nitrogen | Ion beams | Radiation tolerance | Argon | Europium | Radiation damage | Aluminum nitride | Elastic analysis
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2008, Volume 103, Issue 8, pp. 083548 - 083548-10
The possibility of controlling the photoluminescence (PL) intensity and its temperature dependence by means of in-growth and postgrowth technological procedures has been demonstrated for In As ∕ Ga... 
Journal Article
Journal of physics. D, Applied physics, ISSN 0022-3727, 08/2017, Volume 50, Issue 32, p. 325101
Journal Article
Physica status solidi. PSS-RRL. Rapid research letters, ISSN 1862-6254, 09/2019, Volume 13, Issue 9, p. n/a
Large‐scale industrial fabrication of Cu(In,Ga)Se2 (CIGS) photovoltaic panels would benefit significantly if the buffer layer chemical bath deposition could be replaced by a cadmium... 
interface recombination | sputter deposition | Zn(O,S) | Cu(In,Ga)Se2 | CIGS solar cells | buffer layer | Buffer layers | Temperature dependence | Electric potential | Annealing | Defect annealing | Circuits | Aluminum | Copper indium gallium selenides | Interdiffusion | Depth profiling | Thickness | Organic chemistry | Magnetron sputtering | Quantum efficiency | Photovoltaic cells | Optical properties | Voltage | Zinc oxide | Copper | Photoelectric emission | Low temperature
Journal Article
Physica status solidi. A, Applications and materials science, ISSN 1862-6300, 10/2018, Volume 215, Issue 19, p. n/a
...Introduction β‐Ga 2 O 3 , with its wide band gap of 4.8 eV and high breakdown voltage, is a promising material for high power and high temperature electronics... 
β‐Ga2O3 | micro‐probe | ionoluminescence | irradiation | β-Ga | micro-probe | Pollution monitoring | Radiation tolerance | Electrical measurement | Gallium oxides | Flakes (defects) | Proton irradiation
Journal Article
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