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Technical Physics, ISSN 1063-7842, 11/2018, Volume 63, Issue 11, pp. 1603 - 1614
Cherenkov emission of extensive air showers (EAS) from cosmic gamma rays and cosmic-ray protons has been modelled. Spectral density of such emission in the... 
Classical and Continuum Physics | Physics | CRAB-NEBULA | TELESCOPES | ALEGRO | PHYSICS, APPLIED | O-3 | ABSORPTION CROSS-SECTIONS | ULTRAVIOLET | SPECTRA | Gamma rays | Cosmic ray showers | Gamma ray telescopes | Photomultiplier tubes | Emission | Silicon | Fluxes | Sea level | Background radiation | Astronomy | Cosmic rays
Journal Article
Physics of the Solid State, ISSN 1063-7834, 12/2016, Volume 58, Issue 12, pp. 2499 - 2502
The photoluminescence properties of (113) defects formed in a silicon structure after the implantation by oxygen ions with an energy of 350 keV and doses of... 
Solid State Physics | Physics | LIGHT-EMITTING-DIODES | PHYSICS, CONDENSED MATTER | EVOLUTION | ROOM-TEMPERATURE ELECTROLUMINESCENCE | Annealing | Silicon | Analysis | Photoluminescence
Journal Article
Semiconductors, ISSN 1063-7826, 2/2016, Volume 50, Issue 2, pp. 240 - 243
Silicon-based light-emitting diodes (LEDs) fabricated by the Si-ion implantation and chemical-vapor deposition methods are studied. Room-temperature... 
Physics | Magnetism, Magnetic Materials | Physics, general | Light-emitting diodes | Optoelectronics industry
Journal Article
Journal Article
Plasma Physics Reports, ISSN 1063-780X, 10/2016, Volume 42, Issue 10, pp. 909 - 918
Radiation losses from the plasma of the Globus-M tokamak are studied by means of SPD silicon photodiodes developed at the Ioffe Institute, Russian Academy of... 
Atomic, Molecular, Optical and Plasma Physics | Physics | CARBON MATERIALS | IMPURITIES | PHYSICS, FLUIDS & PLASMAS | BEHAVIOR | Photographic industry | Silicon | Radiation | Power loss | Photodiodes | CONTAINERS | ISOTOPES | TOKAMAK DEVICES | 70 PLASMA PHYSICS AND FUSION TECHNOLOGY | PLASMA | BEAM INJECTION HEATING | ELECTRIC CURRENTS | SILICON | ISOTOPE RATIO | PHOTODIODES
Journal Article
Semiconductors, ISSN 1063-7826, 2/2016, Volume 50, Issue 2, pp. 252 - 256
The electroluminescence (EL) in n +–p–p + light-emitting-diode (LED) structures based on Si irradiated with electrons and annealed at high temperature is... 
Physics | Magnetism, Magnetic Materials | Physics, general | Annealing | Light-emitting diodes | Optoelectronics industry | Analysis | Epitaxy | Electrons | CHEMICAL VAPOR DEPOSITION | PHOSPHORUS | BORON | ANNEALING | ELECTRONS | SILICON | LIGHT EMITTING DIODES | MATERIALS SCIENCE | CONCENTRATION RATIO | ELECTROLUMINESCENCE | P-TYPE CONDUCTORS | LAYERS | DIAGRAMS | IRRADIATION | DOPED MATERIALS | POLYCRYSTALS
Journal Article
Technical Physics, ISSN 1063-7842, 06/2017, Volume 62, Issue 6, pp. 819 - 836
A brief overview of the history of atmospheric Cherenkov gamma-ray telescopes is given. Topical problems of modern astrophysics and fundamental physics to be... 
CRAB-NEBULA | NIGHT-SKY | PARTICLE-ACCELERATION | MAGIC TELESCOPE | IMAGING TELESCOPE | PHYSICS, APPLIED | ROTATION-POWERED PULSARS | NONTHERMAL EMISSION | LARGE-AREA TELESCOPE | HIGH-ENERGY EMISSION | SUPERNOVA REMNANT | Gamma rays | Nuclear energy | Telescope | Astronomy | Telescopes | Photons | Astrophysics | Astronomical instruments
Journal Article
Instruments and Experimental Techniques, ISSN 0020-4412, 1/2015, Volume 58, Issue 1, pp. 102 - 106
A small-sized generator of picosecond electron beams is used to measure the temporal resolution of EUV and soft X-ray silicon detectors produced by the Ioffe... 
Measurement Science and Instrumentation | Physical Chemistry | Physics | Electrical Engineering | INSTRUMENTS & INSTRUMENTATION | PINCHES | ENGINEERING, MULTIDISCIPLINARY | Silicon | Detectors
Journal Article
Nuclear Inst. and Methods in Physics Research, A, ISSN 0168-9002, 2009, Volume 603, Issue 1, pp. 58 - 61
We at Siberian Synchrotron Radiation Center (Novosibirsk) have conducted comparative studies of spatial homogeneity of sensitivity and radiation resistance of... 
X-ray range | Radiation resistance | VUV | Synchrotron radiation | INSTRUMENTS & INSTRUMENTATION | SPECTROSCOPY | NUCLEAR SCIENCE & TECHNOLOGY | SILICON | PHYSICS, PARTICLES & FIELDS | Particle accelerators | Detectors | Semiconductor industry
Journal Article
Quantum Electronics, ISSN 1063-7818, 2012, Volume 42, Issue 10, pp. 943 - 948
Journal Article
Conference Proceeding
Technical Physics Letters, ISSN 1063-7850, 9/2012, Volume 38, Issue 9, pp. 812 - 815
Silicon photodiodes have been tested for resistance to vacuum-ultraviolet radiation at 121.6 nm. The responsivities of the p-n and n-p photodiodes under study... 
Physics | Classical Continuum Physics | PHYSICS, APPLIED | QUANTUM EFFICIENCY | RANGE
Journal Article
Bulletin of the Russian Academy of Sciences: Physics, ISSN 1062-8738, 12/2014, Volume 78, Issue 12, pp. 1388 - 1391
The main techniques used at the COSMOS synchrotron radiation station to study the radiation hardness of semiconductor detectors are described. The spectral... 
Nuclear Physics, Heavy Ions, Hadrons | Physics | Mechanical properties | Hardness | Investigations | Detectors | Thin films | Studies | X rays | Semiconductor charged particle detectors | Synchrotron radiation
Journal Article
Technical Physics Letters, ISSN 1063-7850, 4/2014, Volume 40, Issue 4, pp. 330 - 332
Photoresponse of a silicon multipixel photon counter (MPPC) operating in the Geiger breakdown regime has been studied at wavelengths λ = 115, 121, 128, 160,... 
Physics | Classical Continuum Physics | AVALANCHE PHOTODIODES | PHYSICS, APPLIED | Nuclear radiation | Silicon
Journal Article
Semiconductors, ISSN 1063-7826, 2013, Volume 47, Issue 2, pp. 209 - 212
The extremely low level of intrinsic noise attained in silicon detectors with "ideal-diode" current-voltage characteristics has made it possible to create... 
PHYSICS, CONDENSED MATTER | PHOTODIODES | RANGE | Toy industry | Silicon | Detectors
Journal Article
Solid State Phenomena, ISSN 1662-9779, 2016, Volume 242, pp. 368 - 373
  Defect structure, electrical properties and defect-related luminescence (DRL) of light emitting diodes (LED) with the active defect-rich region produced by... 
Defect-related luminescence | Silicon | Oxygen ion implantation | DLTS
Conference Proceeding
Semiconductors, ISSN 1063-7826, 2/2013, Volume 47, Issue 2, pp. 213 - 216
The spatial homogeneity of the photoresponse is studied for silicon photodiodes based on p-n and n-p junctions a year after their irradiation at a wavelength... 
Physics | Magnetism, Magnetic Materials | Physics, general | PHYSICS, CONDENSED MATTER | DETECTORS | QUANTUM EFFICIENCY | X-RAY RANGE | Invisibility | Nuclear radiation | Silicon | IRRADIATION | P-N JUNCTIONS | SOFT X RADIATION | WAVELENGTHS | SILICON | PHOTODIODES | MATERIALS SCIENCE | FAR ULTRAVIOLET RADIATION
Journal Article
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, ISSN 1027-4510, 2/2010, Volume 4, Issue 1, pp. 99 - 103
A photodiode developed at the Ioffe Physico-Tech nical Institute (St. Petersburg) and referred to in the literature as the SPD has been preliminarily... 
Surfaces and Interfaces, Thin Films | Material Science | PHYSICS, CONDENSED MATTER | NANOSCIENCE & NANOTECHNOLOGY | PHYSICS, APPLIED | SILICON PHOTODIODES | Photographic industry | Detectors | Semiconductor industry
Journal Article
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