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physics, applied (8) 8
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IEEE Photonics Technology Letters, ISSN 1041-1135, 09/2016, Volume 28, Issue 18, pp. 1956 - 1959
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2016, Volume 37, Issue 5, pp. 615 - 617
We demonstrate flip-chip light-emitting diodes (FC-LEDs) on a flexible yttria-stabilized zirconia (YSZ) substrate and compare them with FC-LEDs on a polymeric... 
Temperature measurement | polyimide | light-emitting diodes (LEDs) | Heating | Polyimides | flexible display | Light emitting diodes | Thermal conductivity | Ceramics | yttria-stabilized zirconia | Substrates
Journal Article
physica status solidi (a), ISSN 1862-6300, 10/2016, Volume 213, Issue 10, pp. 2769 - 2772
Patterned gallium oxide (Ga2O3) using one‐step patterning followed by oxygen plasma treatment on a p‐GaN layer can function as both current‐blocking and... 
optical scattering | Ga2O3 | light‐emitting diodes | patterning | GaN | current‐blocking layers | current-blocking layers | light-emitting diodes | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | OUTPUT POWER | EXTRACTION | IMPROVEMENT | LAYER | HIGH-EFFICIENCY | Circuit components | Light-emitting diodes | Plasma | Diodes
Journal Article
Optics Express, ISSN 1094-4087, 08/2015, Volume 23, Issue 16, pp. 20340 - 20349
We study light-extraction efficiency (LEE) of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) using flip-chip (FC) devices with varied thickness... 
BLUE | GAN | PATTERNED SAPPHIRE | OPTICAL-PROPERTIES | OPTICS | NEAR-ULTRAVIOLET | ARRAYS
Journal Article
Progress in Photovoltaics: Research and Applications, ISSN 1062-7995, 01/2019, Volume 27, Issue 1, pp. i - i
Journal Article
ACS Applied Materials & Interfaces, ISSN 1944-8244, 11/2016, Volume 8, Issue 43, pp. 29565 - 29572
Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance... 
Research | flexible electronics | roll-to-roll process | epitaxial growth | thin-film transistors | single-crystal-like Si | CELLS | GRAIN-BOUNDARIES | SEMICONDUCTORS | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | LAYERS | GLASS | GERMANIUM | MICROCRYSTALLINE SILICON | FABRICATION | ELECTRONICS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2015, Volume 107, Issue 19, p. 193504
This paper presents strain-effect transistors (SETs) based on flexible III-nitride high-electron-mobility transistors (HEMTs) through theoretical calculations.... 
PHYSICS, APPLIED | MODE ALGAN/GAN HEMTS | STRAINS | THIN FILMS | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | SUBSTRATES | TWO-DIMENSIONAL SYSTEMS | BENDING | RADIOWAVE RADIATION | ELECTRON MOBILITY | TRANSISTORS | ELECTRON GAS | POLARIZATION | SEMICONDUCTOR MATERIALS | GALLIUM NITRIDES
Journal Article
Physica Status Solidi A: Applications and Materials Science, ISSN 1862-6300, 10/2016, Volume 213, Issue 10, pp. 2769 - 2772
Patterned gallium oxide (Ga sub(2)O sub(3)) using one-step patterning followed by oxygen plasma treatment on a p-GaN layer can function as both... 
Patterning | Oxygen plasma | Efficiency | Mathematical analysis | Spreading | Emission analysis | Mathematical models | Light-emitting diodes
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 02/2018, Volume 51, Issue 10, p. 105105
We report a new route to improve quantum efficiencies of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using mechanical flexibility of recently... 
flexible electronics | quantum efficiencies | light-emitting diodes | deep ultraviolet (DUV) | quantum-confined Stark effect | FIELDS | PHYSICS, APPLIED | POLARIZATION
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2017, Volume 38, Issue 2, pp. 217 - 220
We theoretically study the change of the performance characteristics with various mechanical bending conditions for flexible thin-film transistors (TFTs) by... 
flexible structures | Simulation | Two dimensional displays | thin-film transistors | Logic gates | Silicon | Threshold voltage | Thin film transistors | Electric fields | PERFORMANCE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
ACS Photonics, ISSN 2330-4022, 03/2016, Volume 3, Issue 3, pp. 486 - 493
We show that bending of flexible light-emitting diodes based on polar group III–V nitride structures can function as more than mechanically flexible devices... 
strain | wavelength tunability | polarization | light-emitting diodes | quantum efficiency | quantum-confined Stark effect | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | OPTOELECTRONICS | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | STRENGTH | YOUNGS MODULUS | SUBSTRATE | PIEZOELECTRIC FIELDS | BENDABILITY | OPTICS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2014, Volume 104, Issue 14, p. 141105
We report on the direct patterning of two-dimensional periodic structures in GaN-based light-emitting diodes (LEDs) through laser interference ablation for the... 
PHYSICS, APPLIED | EXTERNAL QUANTUM EFFICIENCY | BLUE | EXTRACTION EFFICIENCY | GROWTH | ULTRAVIOLET | EMISSION | PHOTONIC CRYSTALS | HEXAGONAL LATTICES | LASERS | ELECTRON BEAMS | OPTICAL PROPERTIES | LIGHT EMITTING DIODES | NANOSTRUCTURES | MATERIALS SCIENCE | PERIODICITY | GALLIUM NITRIDES
Journal Article
2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC), ISSN 0160-8371, 06/2016, Volume 2016-, pp. 1954 - 1956
This paper describes the demonstration of the flexible single-junction III-V solar cells based on high-quality epitaxial GaAs thin films on a low-cost flexible... 
Photovoltaic systems | Fabrication | thin-film | Photovoltaic cells | Gallium arsenide | Metals | Epitaxy | flexible photovoltaics | minority carrier lifetime | GaAs | Substrates
Conference Proceeding
07/2019
Some embodiments include apparatuses, and methods of forming the apparatuses. Some of the apparatuses include a first group of conductive materials interleaved... 
INFORMATION STORAGE | SEMICONDUCTOR DEVICES | STATIC STORES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | PHYSICS | ELECTRICITY
Patent
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), 06/2018, pp. 0237 - 0239
III-V compound semiconductors are the best photovoltaic solar cell (SC) materials for highest conversion efficiencies. However, they are expensive and lack in... 
Grain boundaries | Photovoltaic systems | Photovoltaic cells | Gallium arsenide | Metals | Epitaxial growth | Substrates
Conference Proceeding
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC), 06/2017, pp. 866 - 868
We demonstrate flexible single-junction III-V solar cells based on single-crystal-like GaAs thin films directly grown on a metal tape. The epitaxial (Al)GaAs... 
Photovoltaic systems | Conferences | Crystals | AC-DC drivers | performance ratio | DC direct-coupled photovoltaic system | Power Server Module
Conference Proceeding
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