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Journal of Applied Physics, ISSN 0021-8979, 06/2019, Volume 125, Issue 23, p. 235706
The influence of pre-existing lattice disorder on radiation defect dynamics in SiC remains unexplored. Here, we use a pulsed ion beam method to study dynamic... 
INDUCED AMORPHIZATION | IRRADIATION | ION | PHYSICS, APPLIED | ACCUMULATION | TEMPERATURE-DEPENDENCE
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 07/2018, Volume 124, Issue 2, p. 25701
Gallium arsenide under ion bombardment at room temperature and above exhibits pronounced dynamic annealing that remains poorly understood. Here, we use a... 
PHYSICS, APPLIED | TEMPERATURE-DEPENDENCE | IMPLANTATION | FLUX DEPENDENCE | SEMICONDUCTORS | DEVICES | DOSE-RATE | DAMAGE
Journal Article
Nuclear Inst. and Methods in Physics Research, B, ISSN 0168-583X, 12/2019, Volume 460, pp. 125 - 127
The buildup of radiation damage is often a dynamic phenomenon proceeding via migration and interaction of point defects ballistically generated in collision... 
Radiation effects | Channeling | Damage | Dynamics | INSTRUMENTS & INSTRUMENTATION | EVOLUTION | TEMPERATURE | NUCLEAR SCIENCE & TECHNOLOGY | SILICON | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | PHYSICS, NUCLEAR | DOSE-RATE
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2015, Volume 106, Issue 20
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 02/2019, Volume 125, Issue 7, p. 75306
A better understanding of the reaction of Mg and B in the solid-phase regime is needed for the low-temperature synthesis of MgB2 films. Here, we study the... 
THIN-FILMS | PHYSICS, APPLIED | MAGNESIUM DIBORIDE | TEMPERATURE | MGB2 | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 06/2017, Volume 121, Issue 23
Journal Article
Applied Surface Science, ISSN 0169-4332, 08/2018, Volume 448, Issue C, pp. 498 - 501
Corrosion of B films in air can limit their practical applications. Here, we study the evolution of the elemental composition, thickness, and morphology of... 
Thin films | AFM | Boron | Oxidation | Rutherford backscattering spectroscopy | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | DEPOSITION | SILICON | CHEMISTRY, PHYSICAL | CARBIDE | COATINGS | STRESS | LAYER | MATERIALS SCIENCE, COATINGS & FILMS | SURFACE-CHEMISTRY | MATERIALS SCIENCE
Journal Article
Nuclear Inst. and Methods in Physics Research, B, ISSN 0168-583X, 11/2018, Volume 435, Issue C, pp. 8 - 11
Radiation damage behavior of SiC depends on its lattice structure. Here, we use a pulsed-ion-beam method to study defect interaction dynamics in -SiC and... 
PHYSICS, NUCLEAR | INSTRUMENTS & INSTRUMENTATION | TEMPERATURE-DEPENDENCE | NUCLEAR SCIENCE & TECHNOLOGY | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Journal Article
Acta Materialia, ISSN 1359-6454, 11/2017, Volume 140, Issue C, pp. 250 - 257
Mechanisms of radiation damage buildup in 3C-SiC remain poorly understood. Here, we use X-ray diffraction in combination with numerical simulations to study... 
DEFECTS | TO-AMORPHOUS TRANSITION | IMPLANTATION | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | SIC SINGLE-CRYSTALS | ION | SILICON-CARBIDE | NEUTRON-IRRADIATION | DAMAGE | Diffraction | Silicon carbide | Numerical analysis | X-rays | Radiation | Engineering Sciences | Material chemistry | Chemical Sciences | Materials
Journal Article
Acta Materialia, ISSN 1359-6454, 11/2017, Volume 140, pp. 250 - 257
Mechanisms of radiation damage buildup in 3C-SiC remain poorly understood. Here, we use X-ray diffraction in combination with numerical simulations to study... 
Material chemistry | Chemical Sciences
Journal Article
Scientific Reports, ISSN 2045-2322, 03/2017, Volume 7, Issue 1, p. 44703
Effects of the collision cascade density on radiation damage in SiC remain poorly understood. Here, we study damage buildup and defect interaction dynamics in... 
ENERGY | TEMPERATURE-DEPENDENCE | MULTIDISCIPLINARY SCIENCES | INDUCED AMORPHIZATION | SILICON-CARBIDE | DAMAGE | CERAMICS | Defects | condensed-matter physics | MATERIALS SCIENCE
Journal Article
Nuclear Inst. and Methods in Physics Research, B, ISSN 0168-583X, 10/2017, Volume 409, Issue C, pp. 347 - 350
The formation of stable radiation damage in solids often proceeds via complex dynamic annealing processes, involving migration and interaction of... 
Damage buildup | Ion channeling | Radiation defects | Dynamics | TEMPERATURE-DEPENDENCE | SEMICONDUCTORS | DAMAGE PRODUCTION | AMORPHIZATION | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | PHYSICS, NUCLEAR | CRYSTALLINE SILICON | IRRADIATION | INSTRUMENTS & INSTRUMENTATION | NUCLEAR SCIENCE & TECHNOLOGY | Annealing | Radiation
Journal Article
Scientific Reports, ISSN 2045-2322, 12/2017, Volume 7, Issue 1, pp. 13182 - 7
The formation of radiation damage in Ge above room temperature is dominated by complex dynamic annealing processes, involving migration and interaction of... 
N-TYPE GERMANIUM | IRRADIATION | ENERGY | TEMPERATURE-DEPENDENCE | IMPLANTATION | MULTIDISCIPLINARY SCIENCES | DIFFUSION | DAMAGE | Annealing | Point defects | Temperature effects | Migration | Radiation
Journal Article
Scientific Reports, ISSN 2045-2322, 08/2016, Volume 6, Issue 1, p. 30931
Understanding response of solids to particle irradiation remains a major materials physics challenge. This applies even to SiC, which is a prototypical nuclear... 
TO-AMORPHOUS TRANSITION | MULTIDISCIPLINARY SCIENCES | SIC SINGLE-CRYSTALS | ION-IMPLANTATION | AMORPHIZATION | FLUX | IRRADIATION-INDUCED CRYSTALLINE | ACCUMULATION | POSITRON-ANNIHILATION | CERAMICS | Recombination | Silicon | Silicon carbide | Temperature effects | Defects | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | MATERIALS SCIENCE
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2015, Volume 118, Issue 10, p. 105705
Above room temperature, the accumulation of radiation damage in 3C-SiC is strongly influenced by dynamic defect interaction processes and remains poorly... 
PHYSICS, APPLIED | BEAM-INDUCED AMORPHIZATION | IMPLANTATION | CRYSTALS | SILICON-CARBIDE | DEPENDENCE | CERAMICS | Silicon compounds | Thermal properties | Usage | Transmission electron microscopes | Electric properties | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | MATERIALS SCIENCE
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 04/2016, Volume 49, Issue 19, pp. 19 - 19LT22
Above room temperature, SiC exhibits pronounced processes of diffusion and interaction of radiation-generated point defects. Here, we use the recently... 
SiC | radiation damage | defect diffusion length | PHYSICS, APPLIED | Temperature dependence | Bombardment | Silicon carbide | Diffusion | Radiation damage | Diffusion length | Ion beams | Defects | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | MATERIALS SCIENCE
Journal Article
Scientific Reports, ISSN 2045-2322, 01/2017, Volume 7, Issue 1, p. 39754
The formation of stable radiation damage in crystalline solids often proceeds via complex dynamic annealing processes, involving migration and interaction of... 
POINT-DEFECTS | TRANSITION | TEMPERATURE-DEPENDENCE | MECHANISM | REGROWTH | BEAMS | MULTIDISCIPLINARY SCIENCES | SILICON | GENERATION | DOSE-RATE | Irradiated | Point defects | Temperature effects | Migration | NUCLEAR PHYSICS AND RADIATION PHYSICS | Electronic devices | MATERIALS SCIENCE | Applied physics
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2016, Volume 108, Issue 22, p. 221906
Sputter deposited amorphous Ge thin films had their nanostructure altered by irradiation with high-energy Ar+ ions. The change in the structure resulted in a... 
FLUCTUATION ELECTRON-MICROSCOPY | RELAXATION | PHYSICS, APPLIED | crystallization | MATERIALS SCIENCE | crystal growth | thin film growth | liquid crystal layers | amorphous semiconductors
Journal Article
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