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Semiconductor Science and Technology, ISSN 0268-1242, 08/2017, Volume 32, Issue 9, p. 94007
Journal Article
Applied physics express, ISSN 1882-0786, 2010, Volume 3, Issue 10, pp. 105602 - 105602-3
... of 0.5 monolayer InAs and 16 monolayer GaAs is revealed by cross-sectional scanning tunneling microscopy... 
MBE GROWTH CHAMBER | EPITAXY | PHYSICS, APPLIED | SURFACE | LAYER | GAAS | STM | QUANTUM DOTS
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 2006, Volume 100, Issue 2
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 02/2005, Volume 71, Issue 8
Photoluminescence emission spectra of self-assembled single InAs/AlAs quantum dots with variable size reveal typical sharp lines below... 
PHYSICS, CONDENSED MATTER | ELECTRON | PHYSICS, APPLIED | FINE-STRUCTURE | MATERIALS SCIENCE, MULTIDISCIPLINARY | RELAXATION | SPECTRA
Journal Article
Materials science forum, ISSN 0255-5476, 09/2007, Volume 555, pp. 9 - 17
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2012, Volume 101, Issue 5, p. 53103
We report on the optical emission properties of catalyst-free, molecular beam epitaxy grown InAs nanowires (NW) on Si (111... 
Quantum confinement | Reduction | Stacking faults | Emission spectroscopy | Optical properties | Nanowires | Density | Indium arsenides
Journal Article
2019 Optical Fiber Communications Conference and Exhibition (OFC), 03/2019, pp. 1 - 3
Narrow linewidth InAs/InP QD DFB lasers with linewidths of less than 50kHz at 20... 
Temperature measurement | Optical interferometry | Quantum dot lasers | Surface emitting lasers | Measurement by laser beam | Laser modes | Optical harmonic generation
Conference Proceeding
Geschichte in Köln, ISSN 0720-3659, 12/2002, Volume 49, Issue 1, pp. 276 - 278
Journal Article
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, ISSN 1071-1023, 07/2011, Volume 29, Issue 4, pp. 04D104 - 04D104-8
Using cross-sectional scanning tunneling microscopy and photoluminescence spectroscopy, the atomic structure and optical properties of submonolayer depositions of InAs in GaAs are studied... 
gallium arsenide | PHYSICS, APPLIED | photoluminescence | monolayers | indium compounds | nanofabrication | MOLECULAR-BEAM EPITAXY | NANOSCIENCE & NANOTECHNOLOGY | MOCVD | GAAS | STM | nanostructured materials | WELLS | ENGINEERING, ELECTRICAL & ELECTRONIC | MBE GROWTH CHAMBER | scanning tunnelling microscopy | semiconductor growth | QUANTUM-DOT SUPERLATTICES | SURFACE | SCANNING-TUNNELING-MICROSCOPY | segregation | III-V semiconductors
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2003, Volume 251, Issue 1, pp. 723 - 728
We report high-quality mid-infrared electroluminescent devices based on a quantum cascade design using InAs/GaSb/AlSb heterostructures grown on GaSb substrates... 
B1. Antimonide | A3. Molecular beam epitaxy | B2. Semiconductor III–V Materials | A1. Interfaces | B3. Infrared devices | B2. Semiconductor III-V Materials | molecular beam epitaxy | interfaces | antimonide | PHYSICS, APPLIED | infrared devices | LASERS | MATERIALS SCIENCE, MULTIDISCIPLINARY | semiconductor III-V materials | CRYSTALLOGRAPHY
Journal Article
Physical Review B, ISSN 2469-9950, 03/2018, Volume 97, Issue 11
We explore the effects of random and short-period crystal-phase intermixing in InAs nanowires (NW... 
SEMICONDUCTOR NANOWIRES | PHYSICS, CONDENSED MATTER | TRANSISTORS | ZINC-BLENDE | PHOSPHIDE NANOWIRES | PHASE QUANTUM DOTS | GAAS NANOWIRES | HIGH-MOBILITY | III-V NANOWIRES | CORE-SHELL NANOWIRES | INP NANOWIRES
Journal Article
2018 IEEE International Semiconductor Laser Conference (ISLC), ISSN 0899-9406, 09/2018, Volume 2018-, pp. 1 - 2
We report spectral characteristics of InAs/InP QD DFB lasers. Owing to low linewidth enhancement factor and high modal gain, lasers with 5 QD layers exhibit... 
Optical interferometry | Optical mixing | Measurement by laser beam | Distributed feedback devices | Optical variables measurement | Laser modes | Frequency measurement
Conference Proceeding
Nuclear Inst. and Methods in Physics Research, B, ISSN 0168-583X, 09/2016, Volume 383, pp. 1 - 5
Journal Article
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 07/2006, Volume 100, Issue 2, p. 23109
The exciton and biexciton emissions of a series of single quantum dots of InAs in an AlAs matrix have been studied... 
ISLANDS | EMISSION | PHYSICS, APPLIED
Journal Article
PHYSICAL REVIEW B, ISSN 1098-0121, 05/2013, Volume 87, Issue 20
Accessing fundamental structure-property correlations in ternary semiconductor nanowires is a challenging endeavor often limited by large compositional... 
INAS NANOWIRES | VAPOR-PHASE EPITAXY | PHYSICS, CONDENSED MATTER | TRANSISTORS | PHOTOLUMINESCENCE | SPECTROSCOPY | SEMICONDUCTORS | SILICON | ZINCBLENDE | INGAAS NANOWIRES | DEPENDENCE
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 06/2005, Volume 71, Issue 24
A GaAsN capping layer grown on InAs quantum dots (QDs) induces a strong redshift of the emission wavelength and extends it beyond 1.3 mu m... 
BAND PARAMETERS | PHYSICS, CONDENSED MATTER | OVERGROWTH | SEMICONDUCTORS | MOLECULAR-BEAM EPITAXY | MU-M EMISSION | GROWTH | OPTICAL-PROPERTIES | CHEMICAL TRENDS | GAAS | GAINNAS
Journal Article
Epilepsia (Copenhagen), ISSN 0013-9580, 2013, Volume 54, Issue 2, pp. 256 - 264
Journal Article
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