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physica status solidi (a), ISSN 1862-6300, 02/2016, Volume 213, Issue 2, pp. 302 - 305
In this work, we prove that, for a current regime of 10 μA and using industry‐relevant programming pulse‐width, Cu/Al2O3‐based conductive‐bridging RAM (CBRAM)... 
conductive bridging RAM | RRAM | memory | data retention | Computer aided manufacturing--CAM | Programming | Bridging | Random access memory | Switching | Aluminum oxide
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2016, Volume 37, Issue 2, pp. 173 - 175
In this letter, we experimentally investigate data retention in a copper (Cu)-based conductive bridge random-access memory device at a low current regime (10... 
Resistance | Electric potential | chemical potential | Random access memory | Ions | Conductive-Bridge RAM (CBRAM) | low current operation | Thermal stability | retention | Aluminum oxide | Conductive-bridge RAM (CBRAM) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Faraday Discussions, ISSN 1359-6640, 2/2019, Volume 213, pp. 67 - 85
This study is focused on Conductive Bridging Random Access Memory (CBRAM) devices based on chalcogenide electrolyte and Cu-supply materials, and aims at... 
TRANSITION | CHEMISTRY, PHYSICAL | MEMORY | CONDUCTIVE-BRIDGING RAM | Memory devices | Electrical properties | Semiconductor devices | Random access memory | Parameter identification | Thermal stability | Tellurium | Motion stability | Chalcogenides | Organic chemistry | CMOS | Bonding strength | Chemical bonds | Electrolytes | Transistors
Journal Article
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 2013, Volume 60, Issue 11, pp. 3690 - 3695
In this paper, we optimize the stack of a 90-nm CMOS-friendly W\Al2O3\Cu conductive-bridging random access memory cell integrated in the... 
Conductive bridging | conductive-bridging random access memory | thermal stability | electrochemical memory cell (ECM) | high-performance memory | low-power memory | PHYSICS, APPLIED | MEMORY | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
The Journal of Physical Chemistry Letters, ISSN 1948-7185, 2015, Volume 6, Issue 10, pp. 1919 - 1924
The formation and rupture of conductive filaments (CFs) inside an insulating medium is used as hardware encoding of the state of a memory cell (“1” – “0”) in... 
RESISTIVE MEMORY | MATERIALS SCIENCE, MULTIDISCIPLINARY | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | RESISTANCE | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | MECHANISMS | MODEL
Journal Article
Physica Status Solidi A: Applications and Materials Science, ISSN 1862-6300, 02/2016, Volume 213, Issue 2, pp. 302 - 305
In this work, we prove that, for a current regime of 10 mu A and using industry-relevant programming pulse-width, Cu/Al sub(2)O sub(3)-based... 
State of the art | Random access memory | Programming | Conductivity | Materials science | Stochasticity | Copper | Switching
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2018, Volume 39, Issue 4, pp. 480 - 483
The underlying mechanism causing tail bits in data retention for high resistance state (HRS) of vacancy-modulated conductive oxide resistive RAM, consisting of... 
Resistance | non-filamentary resistive switching | Fluctuations | Fitting | data retention | Switches | Programming | tail bits | RRAM | TiO | Current density | OPERATION | TiO2 | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Computational Electronics, ISSN 1569-8025, 12/2017, Volume 16, Issue 4, pp. 1011 - 1016
The resistive random-access memory (RRAM) device concept is close to enabling the development of a new generation of non-volatile memories, provided that their... 
Optical and Electronic Materials | Engineering | Mechanical Engineering | Theoretical, Mathematical and Computational Physics | Mathematical and Computational Engineering | Electrical Engineering | PHYSICS, APPLIED | BEHAVIOR | ENGINEERING, ELECTRICAL & ELECTRONIC | Density functionals | Thermodynamics | Electrolytes | Electric properties
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2018, Volume 65, Issue 3, pp. 970 - 977
An extensive investigation of the preexisting and generated defects in amorphous-Si/TiO 2 -based nonfilamentary a-vacancy modulated conductive oxide RRAM... 
nonfilamentary | Switches | a-vacancy modulated conductive oxide (VMCO) | random telegraph noise (RTN) | RRAM | constant voltage stress (CVS) | Stress | Resistance | Degradation | Electrodes | preexisting | Current measurement | Modulation | generated defects | mechanism | read instability | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Nanoscale, ISSN 2040-3364, 10/2013, Volume 5, Issue 22, pp. 11187 - 11192
In the recent past, filamentary-based resistive switching devices have emerged as predominant candidates for future non-volatile memory storage. Most of the... 
PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH | RESISTANCE | NANOSCIENCE & NANOTECHNOLOGY | CONDUCTIVE FILAMENTS | CHEMISTRY, MULTIDISCIPLINARY | Electrodes | Power consumption | Nanocomposites | Filaments | Nanomaterials | Nanostructure | Devices | Switching
Journal Article
IEEE Journal of the Electron Devices Society, ISSN 2168-6734, 05/2016, Volume 4, Issue 3, pp. 163 - 166
In this paper, we optimize a WO 3 \Al 2 O 3 bilayer serving as the electrolyte of a conductive bridge RAM device using a Cu-based supply layer. By introducing... 
Breakdown voltage | Electric breakdown | Scalability | Random access memory | Tungsten | Conductive-bridge RAM (CBRAM) | Oxidation | endurance | low current operation | memory window
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 04/2019, Volume 66, Issue 4, pp. 1892 - 1898
We present a defect spectroscopy technique to profile the energy and spatial distribution of defects within a material stack from leakage current (J-V),... 
metal-insulator-metal (MIM) capacitor | dynamic random-access memory (DRAM) | gate leakage | ZrO | defect spectroscopy | Capacitance | conductance | ZrO2 | PHYSICS, APPLIED | GENERATION | THIN OXIDES | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
ACS Applied Materials & Interfaces, ISSN 1944-8244, 08/2013, Volume 5, Issue 15, pp. 6984 - 6989
We report the improved thermal stability of carbon alloyed Cu0.6Te0.4 for resistive memory applications. Copper–tellurium-based memory cells show enhanced... 
CBRAM | Cu-Te | thermal stability | carbon alloying | resistive memory | ECM | MEMORY | MATERIALS SCIENCE, MULTIDISCIPLINARY | RAY PHOTOELECTRON-SPECTROSCOPY | NANOSCIENCE & NANOTECHNOLOGY | XPS | CERAM
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 05/2014, Volume 120, pp. 67 - 70
[Display omitted] •CBRAM devices are programmed and de-processed.•Material removal techniques is developed using C-AFM.•Fresh and reset devices do not present... 
CBRAM | C-AFM | Conductive filament | Resistive switching | PHYSICS, APPLIED | GROWTH | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC | Memory (Computers) | Investigations | Electrodes | Memory devices | Scanning probe microscopy | Bridging | Filaments | Data storage | Dielectrics | Devices
Journal Article
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