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JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 01/2014, Volume 115, Issue 3, p. 34517
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2014, Volume 61, Issue 8, pp. 2668 - 2673
Journal Article
Springer Series in Advanced Microelectronics, ISSN 1437-0387, 09/2013, Volume 43, pp. 309 - 341
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/2015, Volume 62, Issue 6, pp. 1998 - 2006
Journal Article
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2013, Volume 60, Issue 5, pp. 1754 - 1762
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 2007, Volume 75, Issue 3
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2013, Volume 34, Issue 5, pp. 680 - 682
We combine experiments and simulations to investigate leakage current and breakdown (BD) in stoichiometric and sub-stoichiometric hafnium oxides. Using... 
dielectric breakdown | trap-assisted tunneling | stoichiometry | random access memory (RRAM) | {\rm HfO}_{2} | time-dependent dielectric breakdown (TDDB) | resistive switching memories | device physics | oxygen vacancies | HfO | HfO2 | Device physics | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
2012 IEEE International Integrated Reliability Workshop Final Report, ISSN 1930-8841, 10/2012, pp. 2 - 2
Summary form only given. Among the variety of technology options for the non-volatile memory devices, the resistive switching memory (RRAM) technology, which... 
Conference Proceeding
IEEE Electron Device Letters, ISSN 0741-3106, 02/2008, Volume 29, Issue 2, pp. 180 - 182
Journal Article
Journal of Physics Condensed Matter, ISSN 0953-8984, 09/2015, Volume 27, Issue 41, p. 415401
Formation of metal rich conductive filaments and their rearrangements determine the switching characteristics in HfO2 based resistive random access memory... 
conductive filament | HFO | oxygen vacancy aggregation | DFT | HFO2 | PHYSICS, CONDENSED MATTER | DIELECTRICS | TRANSITION-METAL OXIDES | DEGRADATION | TOTAL-ENERGY CALCULATIONS | STACKS | WAVE BASIS-SET
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2014, Volume 61, Issue 5, pp. 1483 - 1487
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2017, Volume 64, Issue 9, pp. 3786 - 3793
High-mobility alternative channel materials to silicon are critical to the continued scaling of MOS devices. The analysis of capacitance–voltage (C–V)... 
Electric potential | Computer simulation | Customizing | Tools | Dielectrics | MOS devices | Simulation | Quantum mechanics | Germanium | Stacks | Capacitance | Silicon | Extraction
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2014, Volume 61, Issue 7, pp. 2287 - 2293
  We propose a physical model for the fast component ( \(<1\) s) of the positive bias temperature instability (PBTI) process in SiOx/HfO2 gate-stacks. The... 
Trapping | Stability | Bias | Stacks | Hafnium oxide | Instability | Devices | Defects
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2013, Volume 34, Issue 3, pp. 387 - 389
We present a simple empirical expression describing hafnium-based RRAM resistance at different reset voltages and current compliances. The model that we... 
Voltage measurement | low-frequency noise (LFN) | hbox{HfO}_{x} | Noise | Switches | RRAM | filamentary conduction | Electrical resistance measurement | Resistance | Current measurement | nonvolatile memories (NVMs) | Hafnium compounds | Compact model | HfO | HfOx | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 2013, Volume 114, Issue 13, p. 134503
We investigate the role of grains and grain boundaries (GBs) in the electron transport through poly-crystalline HfO2 by means of conductive atomic force... 
PHYSICS, APPLIED | THIN
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2016, Volume 109, Issue 7
The microstructural features determining the leakage current through polycrystalline BaTiO3 films are investigated using Conductive Atomic Force Microscopy.... 
Grain boundaries | Atomic force microscopy | Scanning probe microscopy | Microscopy | Polycrystals | Conductivity | Charge transport | Barium titanates | Leakage current | Microscopes
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2016, Volume 109, Issue 7
The microstructural features determining the leakage current through polycrystalline BaTiO{sub 3} films are investigated using Conductive Atomic Force... 
CHARGE TRANSPORT | ELECTRIC POTENTIAL | FILMS | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | ATOMIC FORCE MICROSCOPY | GRAIN BOUNDARIES | TITANATES | MATERIALS SCIENCE | LEAKAGE CURRENT | POLYCRYSTALS | LEAKS | PROBES
Journal Article
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