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1. Full Text Assessing hafnium on hafnia as an oxygen getter
by O'Hara, Andrew and Bersuker, Gennadi and Demkov, Alexander A
Journal of Applied Physics, ISSN 0021-8979, 05/2014, Volume 115, Issue 18, p. 183703
Hafnium dioxide or hafnia is a wide band gap dielectric used in a range of electronic applications from field effect transistors to resistive memory. In many... 
HFO2 | ZRO2 | PHYSICS, APPLIED | MEMORY | STABILITY | AB-INITIO | OXIDES | Thermal properties | Measurement | Usage | Optical properties | Analysis | Hafnium | Density functionals | Oxidation-reduction reaction | Surface energy | Stoichiometry | Oxygen | Semiconductor devices | Interface stability | Field effect transistors | Migration | Density functional theory | Hafnium oxide | Oxidation | Gettering | Heat of formation | Free energy | FORMATION HEAT | OXIDATION | MONOCLINIC LATTICES | DENSITY FUNCTIONAL METHOD | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | HAFNIUM | ENERGY GAP | HAFNIUM OXIDES | LAYERS | FIELD EFFECT TRANSISTORS | OXYGEN | PHASE STABILITY | INTERFACES | VACANCIES | DIELECTRIC MATERIALS
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2. Full Text Gate dielectric degradation: Pre-existing vs. generated defects
by Veksler, D and Bersuker, G
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 01/2014, Volume 115, Issue 3, p. 34517
We consider the possibility that degradation of the electrical characteristics of high-k gate stacks under low voltage stresses of practical interest is caused... 
PHYSICS, APPLIED | RELIABILITY | NOISE | MODEL | INSULATOR | Thin films | Dielectrics | Research | Dielectric films | Properties | Charge exchange | Activation | Reliability aspects | Charge transport | Substrates | Silicon dioxide | Defects | Current carriers | Degradation | Time dependence | Electrical measurement | Low voltage | Stacks | Threshold voltage | Leakage current | CHARGE TRANSPORT | ELECTRONS | SUBSTRATES | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | LEAKAGE CURRENT | LAYERS | STRESSES | CHARGE CARRIERS | PHONONS | ELECTRIC POTENTIAL | CRYSTAL DEFECTS | DIELECTRIC MATERIALS | ELECTRON CAPTURE | SILICON OXIDES
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3. Full Text A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis
by Larcher, Luca and Puglisi, Francesco Maria and Pavan, Paolo and Padovani, Andrea and Vandelli, Luca and Bersuker, Gennadi
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2014, Volume 61, Issue 8, pp. 2668 - 2673
This paper presents a physics-based compact model for the program window in HfOx resistive random access memory devices, defined as the ratio of the... 
Resistance | Electron traps | Voltage measurement | Current measurement | non-volatile memories | Charge transport | Hafnium compounds | Dielectrics | compact modeling | Electrical resistance measurement | PHYSICS, APPLIED | nonvolatile memories | LEAKAGE CURRENT | BREAKDOWN | ENGINEERING, ELECTRICAL & ELECTRONIC | Thermal properties | Measurement | Usage | Random access memory | Innovations | Hafnium | Voltage | Mathematical optimization | Electric properties
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4. Reliability implications of fast and slow degradation processes in high-k gate stacks
by Bersuker, Gennadi and Bersuker, Gennadi
Springer Series in Advanced Microelectronics, ISSN 1437-0387, 09/2013, Volume 43, pp. 309 - 341
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5. Full Text Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
by Padovani, Andrea and Larcher, Luca and Pirrotta, Onofrio and Vandelli, Luca and Bersuker, Gennadi
IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/2015, Volume 62, Issue 6, pp. 1998 - 2006
We propose a model describing the operations of hafnium oxide-based resistive random access memory (RRAM) devices at the microscopic level. Charge carrier and... 
forming | Temperature | SET | Conductive filament (CF) | Switches | Ions | Dielectrics | RESET | resistive switching | Temperature measurement | HfO | Microscopy | trap-assisted tunneling (TAT) | Hafnium compounds | resistive random access memory (RRAM) | Traps-assisted tunneling (TAT) | PHYSICS, APPLIED | HfO2 | CURRENTS | STACKS | ENGINEERING, ELECTRICAL & ELECTRONIC | DIELECTRICS | RESISTANCE | DEVICES | CONDUCTIVE FILAMENT | BREAKDOWN
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6. Full Text Probing and Manipulating the Interfacial Defects of InGaAs Dual‐Layer Metal Oxides at the Atomic Scale
by Wu, Xing and Luo, Chen and Hao, Peng and Sun, Tao and Wang, Runsheng and Wang, Chaolun and Hu, Zhigao and Li, Yawei and Zhang, Jian and Bersuker, Gennadi and Sun, Litao and Pey, Kinleong
Advanced Materials, ISSN 0935-9648, 01/2018, Volume 30, Issue 2, pp. 1703025 - n/a
The interface between III–V and metal‐oxide‐semiconductor materials plays a central role in the operation of high‐speed electronic devices, such as transistors... 
in situ transmission electron microscope | III–V semiconductors | breakdown | interfacial defects | oxygen vacancies | PHYSICS, CONDENSED MATTER | STATES | PHYSICS, APPLIED | SEMICONDUCTOR | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | TIME | STACKS | CHEMISTRY, MULTIDISCIPLINARY | FIELD-EFFECT TRANSISTORS | DIELECTRICS | ZIRCALOY | III-V semiconductors | Semiconductors | Transmission electron microscopes | Atoms | Oxides | Transistors | Light-emitting diodes | Investigations | Electric properties | Conduction bands | Scale (corrosion) | Semiconductor materials | Electronic devices | Electrical properties | Semiconductor devices | Light emitting diodes | Electron microscopy | Substrates | Remote sensing | Aluminum oxide | Defects | Metal oxides | Electronic structure | High speed | Dark current | Organic light emitting diodes | Wave functions | Zirconium dioxide | Atomic structure | Group III-V semiconductors
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7. Full Text Microscopic Modeling of Electrical Stress-Induced Breakdown in Poly-Crystalline Hafnium Oxide Dielectrics
by Vandelli, Luca and Padovani, Andrea and Larcher, Luca and Bersuker, Gennadi
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2013, Volume 60, Issue 5, pp. 1754 - 1762
We present a quantitative physical model describing degradation of poly-crystalline HfO 2 dielectrics subjected to electrical stress culminating in the... 
trap-assisted tunneling | {\rm HfO}_{2} | Tunneling | Breakdown statistics | TDDB | transistor's reliability | RRAM | Dielectric breakdown | Transistors | Reliability | HfO | Transistor's reliability | Trap-assisted tunneling | GATE STACKS | HIGH-K | PHYSICS, APPLIED | HfO2 | RELIABILITY | LEAKAGE CURRENT | ENGINEERING, ELECTRICAL & ELECTRONIC | dielectric breakdown | Measurement | Usage | Statistical models | Hafnium | Voltage | Innovations | Electric fields | Electric properties | Dielectric devices
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8. Full Text Theoretical study of the insulator/insulator interface: Band alignment at the Si O2 Hf O2 junction
by Sharia, Onise and Demkov, Alexander A and Bersuker, Gennadi and Lee, Byoung Hun
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 2007, Volume 75, Issue 3
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9. Full Text Charge Transport and Degradation in HfO2 and HfOx Dielectrics
by Padovani, A and Larcher, L and Bersuker, G and Pavan, P
IEEE Electron Device Letters, ISSN 0741-3106, 05/2013, Volume 34, Issue 5, pp. 680 - 682
We combine experiments and simulations to investigate leakage current and breakdown (BD) in stoichiometric and sub-stoichiometric hafnium oxides. Using... 
dielectric breakdown | trap-assisted tunneling | stoichiometry | random access memory (RRAM) | {\rm HfO}_{2} | time-dependent dielectric breakdown (TDDB) | resistive switching memories | device physics | oxygen vacancies | HfO | HfO2 | Device physics | ENGINEERING, ELECTRICAL & ELECTRONIC
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10. Full Text (Invited) Origin of conductive filaments and resistive switching in HfO2-based RRAMs
by Bersuker, Gennadi
2012 IEEE International Integrated Reliability Workshop Final Report, ISSN 1930-8841, 10/2012, pp. 2 - 2
Summary form only given. Among the variety of technology options for the non-volatile memory devices, the resistive switching memory (RRAM) technology, which... 
Conference Proceeding
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11. Full Text Experimental evidence of the fast and slow charge trapping/detrapping processes in high-κ dielectrics subjected to PBTI stress
by Heh, Dawei and Young, Chadwin D and Bersuker, Gennadi
IEEE Electron Device Letters, ISSN 0741-3106, 02/2008, Volume 29, Issue 2, pp. 180 - 182
Electron trapping | Transient charge | High-κ | Single pulse | Discharge
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12. Full Text Modelling of oxygen vacancy aggregates in monoclinic HfO2: can they contribute to conductive filament formation?
by Bradley, Samuel R and Bersuker, Gennadi and Shluger, Alexander L
Journal of Physics Condensed Matter, ISSN 0953-8984, 09/2015, Volume 27, Issue 41, p. 415401
Formation of metal rich conductive filaments and their rearrangements determine the switching characteristics in HfO2 based resistive random access memory... 
conductive filament | HFO | oxygen vacancy aggregation | DFT | HFO2 | PHYSICS, CONDENSED MATTER | DIELECTRICS | TRANSITION-METAL OXIDES | DEGRADATION | TOTAL-ENERGY CALCULATIONS | STACKS | WAVE BASIS-SET
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13. Full Text Modeling Illumination Effects on n- and p-Type InGaAs MOS at Room and Low Temperatures
by Han-Ping Chen and Veksler, Dmitry and Bersuker, Gennadi and Yuan Taur
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2014, Volume 61, Issue 5, pp. 1483 - 1487
InGaAs MOS C-V and G-V characteristics are measured under illumination to identify regions of strong minority carrier response related to surface inversion.... 
InGaAs | MOS | Lighting | Logic gates | Capacitance | Indium gallium arsenide | interface state model | Interface states | Integrated circuit modeling | Substrates | light illumination | AL2O3-INGAAS MOS | PHYSICS, APPLIED | BULK-OXIDE TRAP | AL2O3 | ENGINEERING, ELECTRICAL & ELECTRONIC | Integrated circuits | Usage | Gallium arsenide | Gates (Electronics) | Innovations | Research | Semiconductor chips | Semiconductor research | Metal oxide semiconductors | Inversions | Illumination | Conductance | Minority carriers | Valence band | Conduction band | Density
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14. Full Text Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High-k on Si x Ge1− x and In x Ga1− x As: Part I—Model Description and Validation
by Anwar, Sarkar R. M and Vandenberghe, William G and Bersuker, Gennadi and Veksler, Dmitry and Verzellesi, Giovanni and Morassi, Luca and Galatage, Rohit V and Jha, Sumit and Buie, Creighton and Barton, Adam T and Vogel, Eric M and Hinkle, Christopher L
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2017, Volume 64, Issue 9, pp. 3786 - 3793
High-mobility alternative channel materials to silicon are critical to the continued scaling of MOS devices. The analysis of capacitance–voltage (C–V)... 
Electric potential | Computer simulation | Customizing | Tools | Dielectrics | MOS devices | Simulation | Quantum mechanics | Germanium | Stacks | Capacitance | Silicon | Extraction
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15. A Charge-Trapping Model for the Fast Component of Positive Bias Temperature Instability (PBTI) in High- \(\kappa \) Gate-Stacks
by Luca Vandelli and Luca Larcher and Dmitry Veksler and Andrea Padovani and Gennadi Bersuker and Kenneth Matthews
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2014, Volume 61, Issue 7, pp. 2287 - 2293
  We propose a physical model for the fast component ( \(<1\) s) of the positive bias temperature instability (PBTI) process in SiOx/HfO2 gate-stacks. The... 
Trapping | Stability | Bias | Stacks | Hafnium oxide | Instability | Devices | Defects
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16. Full Text An Empirical Model for RRAM Resistance in Low- and High-Resistance States
by Puglisi, F. M and Larcher, L and Bersuker, G and Padovani, A and Pavan, P
IEEE Electron Device Letters, ISSN 0741-3106, 03/2013, Volume 34, Issue 3, pp. 387 - 389
We present a simple empirical expression describing hafnium-based RRAM resistance at different reset voltages and current compliances. The model that we... 
Voltage measurement | low-frequency noise (LFN) | hbox{HfO}_{x} | Noise | Switches | RRAM | filamentary conduction | Electrical resistance measurement | Resistance | Current measurement | nonvolatile memories (NVMs) | Hafnium compounds | Compact model | HfO | HfOx | ENGINEERING, ELECTRICAL & ELECTRONIC
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17. Full Text Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries
by Pirrotta, Onofrio and Larcher, Luca and Lanza, Mario and Padovani, Andrea and Porti, Marc and Nafría, Montserrat and Bersuker, Gennadi
Journal of Applied Physics, ISSN 0021-8979, 2013, Volume 114, Issue 13, p. 134503
We investigate the role of grains and grain boundaries (GBs) in the electron transport through poly-crystalline HfO2 by means of conductive atomic force... 
PHYSICS, APPLIED | THIN
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18. Full Text Comprehensive Capacitance–Voltage Simulation and Extraction Tool Including Quantum Effects for High- k on SixGe1−x and InxGa1−xAs: Part II—Fits and Extraction From Experimental Data
by Anwar, Sarkar R. M and Vandenberghe, William G and Bersuker, Gennadi and Veksler, Dmitry and Verzellesi, Giovanni and Morassi, Luca and Galatage, Rohit V and Jha, Sumit and Buie, Creighton and Barton, Adam T and Vogel, Eric M and Hinkle, Christopher L
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2017, Volume 64, Issue 9, pp. 3794 - 3801
Capacitance-voltage (C-V) measurement and analysis is highly useful for determining important information about MOS gate stacks. Parameters such as the... 
quantum mechanical (QM) effects | Semiconductor device measurement | D it extraction">D it extraction | CV ACE | Logic gates | Interface states | Frequency measurement | C–V simulation | Quantum capacitance | High-k dielectric materials | thin oxides | III-V semiconductors | Dit extraction | C-V simulation | PHYSICS, APPLIED | OXIDE | DEPOSITION | C-V | ENGINEERING, ELECTRICAL & ELECTRONIC | D-it extraction | GAAS-C(2X8)/(2X4) | DIELECTRICS | INTERFACES | AL2O3 | Usage | Gates (Electronics) | Charge density | Electric potential | Computer simulation | Stacks | Capacitance | Extraction | Mathematical models
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19. Conductive paths through polycrystalline BaTiO3: Scanning probe microscopy study
by Ayvazian Talin and Bersuker Gennadi and Lingley Zachary R and Brodie Miles J and Foran Brendan J
Applied Physics Letters, ISSN 0003-6951, 08/2016, Volume 109, Issue 7
The microstructural features determining the leakage current through polycrystalline BaTiO3 films are investigated using Conductive Atomic Force Microscopy.... 
Grain boundaries | Atomic force microscopy | Scanning probe microscopy | Microscopy | Polycrystals | Conductivity | Charge transport | Barium titanates | Leakage current | Microscopes
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20. Full Text Conductive paths through polycrystalline BaTiO{sub 3}: Scanning probe microscopy study
by Ayvazian, Talin and Bersuker, Gennadi and Lingley, Zachary R and Brodie, Miles J and Foran, Brendan J
Applied Physics Letters, ISSN 0003-6951, 08/2016, Volume 109, Issue 7
The microstructural features determining the leakage current through polycrystalline BaTiO{sub 3} films are investigated using Conductive Atomic Force... 
CHARGE TRANSPORT | ELECTRIC POTENTIAL | FILMS | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | ATOMIC FORCE MICROSCOPY | GRAIN BOUNDARIES | TITANATES | MATERIALS SCIENCE | LEAKAGE CURRENT | POLYCRYSTALS | LEAKS | PROBES
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