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APPLIED PHYSICS LETTERS, ISSN 0003-6951, 07/2007, Volume 91, Issue 5, p. 51909
The optical properties of GaBixAs1-x(0.04 < x < 0.08) grown by molecular beam epitaxy have been studied by photomodulated reflectance spectroscopy. The alloys... 
GAAS1-XBIX | PHYSICS, APPLIED | TEMPERATURE-DEPENDENCE | SPECTROSCOPY | GROWTH | GAP | 36 | MOLECULAR BEAM EPITAXY | ALLOYS | OPTICAL PROPERTIES | ATOMS | VALENCE
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2007, Volume 91, Issue 5
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2011, Volume 98, Issue 8, pp. 082115 - 082115-3
We applied a time-resolved transient grating technique for investigation of nonequilibrium carrier dynamics in GaAs 1 − x Bi x alloys with x = 0.025 - 0.063 .... 
SURFACE RECOMBINATION VELOCITY | PHYSICS, APPLIED | EPILAYERS | MOLECULAR-BEAM-EPITAXY | SEMICONDUCTORS | CARRIER DYNAMICS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2006, Volume 88, Issue 20, pp. 201112 - 201112-3
GaBiAs layers have been grown by molecular beam epitaxy at low ( 270 - 330 ° C ) temperatures and were characterized by several experimental techniques. It was... 
GAAS1-XBIX | PHYSICS, APPLIED | MOLECULAR-BEAM EPITAXY | gaas1-xbix | molecular-beam epitaxy
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 07/2007, Volume 22, Issue 7, pp. 819 - 823
GaBiAs layers with Bi content reaching 8.4% are grown by MBE technique at low temperatures. All layers were of p-type with carrier densities ranging from 3 x... 
GAAS1-XBIX | PHYSICS, CONDENSED MATTER | GAASBI ALLOY | MATERIALS SCIENCE, MULTIDISCIPLINARY | IN0.53GA0.47AS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Materials Science: Materials in Electronics, ISSN 0957-4522, 1/2009, Volume 20, Issue S1, pp. 363 - 366
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2007, Volume 91, Issue 5, pp. 051909 - 051909-3
The optical properties of Ga Bi x As 1 − x ( 0.04 < x < 0.08 ) grown by molecular beam epitaxy have been studied by photomodulated reflectance spectroscopy.... 
Journal Article
ELECTRONICS LETTERS, ISSN 0013-5194, 09/2008, Volume 44, Issue 19, pp. 1154 - U20
A terahertz time-domain spectroscopy system based on a femtosecond Yb:KGW laser, a narrow-gap semiconductor surface emitter, and a photoconductive detector... 
YB-KGW LASER | TECHNOLOGY | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Express, ISSN 1882-0778, 2/2012, Volume 5, Issue 2, pp. 022601 - 022601-3
We report the terahertz frequency radiation detection using photoconductive antennas fabricated from molecular-beam-epitaxy-grown GaAsBi. We have estimated... 
GABIAS | PHYSICS, APPLIED | PULSES
Journal Article
Journal of Physics: Condensed Matter, ISSN 0953-8984, 09/1997, Volume 9, Issue 39, pp. L557 - L559
We present experimental results on the field ionization of beryllium accepters in micrometre AlGaAs/GaAs structures on a nanosecond timescale. At liquid helium... 
PHYSICS, CONDENSED MATTER | K UK PHYSICS, CONDENSED MATTER | IONIZATION
Journal Article
Electronics Letters, ISSN 0013-5194, 2008, Volume 44, Issue 19, pp. 1154 - 1155
Journal Article
Electronics Letters, ISSN 0013-5194, 09/2008, Volume 44, Issue 19, p. 1
  A terahertz time-domain spectroscopy system based on a femtosecond Yb:KGW laser, a narrow-gap semiconductor surface emitter, and a photoconductive detector... 
Journal Article
Electronics Letters, ISSN 0013-5194, 09/2008, Volume 44, Issue 19, pp. 1 - 1
A terahertz time-domain spectroscopy system based on a femtosecond Yb:KGW laser, a narrow-gap semiconductor surface emitter, and a photoconductive detector... 
Femtosecond | Optoelectronics | Semiconductors | Lasers | Dynamics | Emitters (electron) | Spectra | Dynamical systems
Journal Article
Electronics Letters, ISSN 0013-5194, 2008, Volume 44, Issue 19, p. 1154
Journal Article
Electronics Letters, ISSN 0013-5194, 2007, Volume 43, Issue 3, pp. 190 - 191
The terahertz time-domain spectroscopy system using 1030 nm wavelength fertosecond pulses generated by a Yb:KGW laser is presented. The system, employing... 
ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2003, Volume 83, Issue 25, pp. 5304 - 5306
We study hole dynamics in GaAs layers grown by molecular-beam epitaxy at 270 degreesC by two-color pump-and-probe experiments employing femtosecond... 
DEFECTS | PHYSICS, APPLIED | NONSTOICHIOMETRIC GAAS | CARRIER DYNAMICS | MOLECULAR-BEAM EPITAXY
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2003, Volume 94, Issue 5, pp. 3651 - 3653
We investigate the performance of n-type GaAs plasmon emitters with surface layers grown by low-temperature molecular-beam epitaxy. The emitters have as-grown... 
PHYSICS, APPLIED | SEMICONDUCTOR SURFACES | EMISSION | FERMI-LEVEL | Molecular beams | Research | Plasmons (Physics) | Gallium arsenide | Optical properties | Terahertz radiation
Journal Article
Optical Materials, ISSN 0925-3467, 01/2008, Volume 30, Issue 5, pp. 756 - 758
GaBiAs layers have been grown by molecular beam epitaxy at low temperatures (270–330 °C) and have been characterized with several experimental techniques.... 
MBE | Terahertz | Ultrafast processes | GaBiAs | Optical properties | optical properties | terahertz | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | THZ | OPTICS | GAAS | ultrafast processes | Growth | Epitaxy | Photoluminescence
Journal Article
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