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migration (3) 3
amorphous oxides (2) 2
computer simulation (2) 2
density functional theory (2) 2
diffusion (2) 2
molecular dynamics (2) 2
resistive random-access memory (2) 2
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electrical resistivity (1) 1
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1. Semi-classical Monte Carlo study of the impact of contact geometry and transmissivity on quasi-ballistic nanoscale Si and In0.53Ga0.47As n-channel FinFETs
by Bhatti Aqyan A and Crum Dax M and Valsaraj Amithraj and Register Leonard F and Banerjee Sanjay K
Journal of Applied Physics, ISSN 0021-8979, 09/2019, Volume 126, Issue 10
The effects of contact geometry and specific contact resistivity on In0.53Ga0.47As (InGaAs) and silicon (Si) nanoscale (18 nm channel length) n-channel FinFETs... 
Geometry | Monte Carlo method | Computer simulation | Electrical resistivity | Transmissivity | Silicon | Offsets | Transconductance
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2. Full Text First-principles simulation of oxygen vacancy migration in HfO x , CeO x , and at their interfaces for applications in resistive random-access memories
by Bhatti, Aqyan A and Hsieh, Cheng-Chih and Roy, Anupam and Register, Leonard F and Banerjee, Sanjay K
Journal of Computational Electronics, ISSN 1569-8025, 09/2016, Volume 15, Issue 3, pp. 741 - 748
To access, purchase, authenticate, or subscribe to the full-text of this article, please visit this link: http://dx.doi.org/10.1007/s10825-016-0847-9... 
Amorphous oxides | Resistive random-access memory (RRAM) | Vacancy | Migration | Molecular dynamics (MD) | Diffusion | Density functional theory (DFT) | Molecular dynamics | Density functionals | Oxides | Transition metal compounds | Activation energy | Memory
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3. First-principles simulation of oxygen vacancy migration in \(\hbox {HfO}_{ x}\), \(\hbox {CeO}_{ x}\), and at their interfaces for applications in resistive random-access memories
by Bhatti, Aqyan A and Hsieh, Cheng-Chih and Roy, Anupam and Register, Leonard F and Banerjee, Sanjay K
Journal of Computational Electronics, ISSN 1569-8025, 09/2016, Volume 15, Issue 3, pp. 741 - 748
Transition metal-oxide resistive random-access memories seem to be a viable candidate as the next-generation storage technology because transition metals have... 
Oxygen | Constituents | Vacancies | Computer simulation | Diffusion barriers | Migration | Electronics | Switching
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4. Full Text Semi-classical Monte Carlo study of the impact of contact geometry and transmissivity on quasi-ballistic nanoscale Si and In0.53Ga0.47As n-channel FinFETs
by Bhatti, Aqyan A and Crum, Dax M and Valsaraj, Amithraj and Register, Leonard F and Banerjee, Sanjay K
Journal of Applied Physics, ISSN 0021-8979, 09/2019, Volume 126, Issue 10, p. 105705
The effects of contact geometry and specific contact resistivity on In0.53Ga0.47As (InGaAs) and silicon (Si) nanoscale (18 nm channel length) n-channel FinFETs... 
HFO2 | ELECTRON-DRIFT VELOCITY | CMOS | TRANSPORT | PHYSICS, APPLIED | DOUBLE-GATE | MOBILITY | SEMICONDUCTORS | TIME | CURRENTS | SIMULATION
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5. Full Text Semi-Classical Monte Carlo Simulation of Contact Geometry, Orientation, and Ideality on Nano-scale Si and III-V n-channel FinFETs in the Quasi-Ballistic Limit
by Bhatti, Aqyan A and Crum, Dax M and Valsaraj, Amith and Register, Leonard F and Banerjee, Sanjay K
03/2019
The effects of contact geometry and ideality on InGaAs and Si nano-scale n-channel FinFET performance are studied using a quantum-corrected semi-classical... 
Physics - Mesoscale and Nanoscale Physics
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6. Full Text First-principles simulation of oxygen vacancy migration in $$\hbox {HfO}_{ x}$$ HfO x , $$\hbox {CeO}_{ x}$$ CeO x , and at their interfaces for applications in resistive random-access memories
by Bhatti, Aqyan A and Hsieh, Cheng-Chih and Roy, Anupam and Register, Leonard F and Banerjee, Sanjay K
Journal of Computational Electronics, ISSN 1569-8025, 9/2016, Volume 15, Issue 3, pp. 741 - 748
Transition metal-oxide resistive random-access memories seem to be a viable candidate as the next-generation storage technology because transition metals have... 
Vacancy | Theoretical, Mathematical and Computational Physics | Density functional theory (DFT ) | Migration | Optical and Electronic Materials | Engineering | Amorphous oxides | Resistive random-access memory (RRAM ) | Appl.Mathematics/Computational Methods of Engineering | Molecular dynamics (MD ) | Mechanical Engineering | Diffusion | Electrical Engineering
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