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Journal of Applied Physics, ISSN 0021-8979, 09/2019, Volume 126, Issue 10
The effects of contact geometry and specific contact resistivity on In0.53Ga0.47As (InGaAs) and silicon (Si) nanoscale (18 nm channel length) n-channel FinFETs... 
Geometry | Monte Carlo method | Computer simulation | Electrical resistivity | Transmissivity | Silicon | Offsets | Transconductance
Journal Article
Journal of Computational Electronics, ISSN 1569-8025, 09/2016, Volume 15, Issue 3, pp. 741 - 748
To access, purchase, authenticate, or subscribe to the full-text of this article, please visit this link: http://dx.doi.org/10.1007/s10825-016-0847-9... 
Amorphous oxides | Resistive random-access memory (RRAM) | Vacancy | Migration | Molecular dynamics (MD) | Diffusion | Density functional theory (DFT) | Molecular dynamics | Density functionals | Oxides | Transition metal compounds | Activation energy | Memory
Journal Article
Journal of Computational Electronics, ISSN 1569-8025, 09/2016, Volume 15, Issue 3, pp. 741 - 748
Transition metal-oxide resistive random-access memories seem to be a viable candidate as the next-generation storage technology because transition metals have... 
Oxygen | Constituents | Vacancies | Computer simulation | Diffusion barriers | Migration | Electronics | Switching
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2019, Volume 126, Issue 10, p. 105705
The effects of contact geometry and specific contact resistivity on In0.53Ga0.47As (InGaAs) and silicon (Si) nanoscale (18 nm channel length) n-channel FinFETs... 
HFO2 | ELECTRON-DRIFT VELOCITY | CMOS | TRANSPORT | PHYSICS, APPLIED | DOUBLE-GATE | MOBILITY | SEMICONDUCTORS | TIME | CURRENTS | SIMULATION
Journal Article
03/2019
The effects of contact geometry and ideality on InGaAs and Si nano-scale n-channel FinFET performance are studied using a quantum-corrected semi-classical... 
Physics - Mesoscale and Nanoscale Physics
Journal Article
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