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1. Full Text Efficient low-loss InGaAsP/Si hybrid MOS optical modulator
by Han, Jae-Hoon and Boeuf, Frederic and Fujikata, Junichi and Takahashi, Shigeki and Takagi, Shinichi and Takenaka, Mitsuru
Nature Photonics, ISSN 1749-4885, 08/2017, Volume 11, Issue 8, pp. 486 - 490
An optical modulator integrated on silicon is a key enabler for high-performance optical interconnects(1-6). However, Si-based optical modulators suffer from... 
REFRACTIVE-INDEX | PHYSICS, APPLIED | OPTICS | MACH-ZEHNDER MODULATOR | III-V | SILICON | Metal oxides | Optical interconnects | Gallium indium arsenide phosphide | Phase shift | Modulation | Refractivity | Silicon | Interconnections | Modulators | Photonics
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2. Full Text Benchmarking Si, SiGe, and III–V/Si Hybrid SIS Optical Modulators for Datacenter Applications
by Boeuf, Frederic and Jae-Hoon Han and Takagi, Shinichi and Takenaka, Mitsuru
Journal of Lightwave Technology, ISSN 0733-8724, 09/2017, Volume 35, Issue 18, pp. 4047 - 4055
Recently, Si-photonics received a growing interest and started to move from laboratories to industrial product development, mainly for the applications inside... 
Optical losses | Optical filters | Optical polarization | Phase shifters | Electrooptic modulators | intensity modulation | Silicon | optical transmitters | Optical modulation | silicon photonics | MOBILITY | SILICON | INP | TELECOMMUNICATIONS | BAND-GAP | ENGINEERING, ELECTRICAL & ELECTRONIC | IN1-XGAXASYP1-Y | REFRACTIVE-INDEX | INGAASP | OPTICS | Gallium indium arsenide phosphide | Fiber optic networks | Benchmarks | Wavelength division multiplexing | Product development | Devices | Wavelength division | Modulators | Figure of merit | Photonics | Silicon germanides
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3. Full Text Hybrid Silicon Photonic Circuits and Transceiver for 50 Gb/s NRZ Transmission Over Single-Mode Fiber
by Denoyer, Gilles and Cole, Chris and Santipo, Antonio and Russo, Riccardo and Robinson, Curtis and Li, Lionel and Yuxin Zhou and Chen, Jianxiao Alan and Park, Bryan and Boeuf, Frederic and Cremer, Sebastien and Vulliet, Nathalie
Journal of Lightwave Technology, ISSN 0733-8724, 03/2015, Volume 33, Issue 6, pp. 1247 - 1254
This paper presents a 50 Gb/s per lane hybrid BiCMOS and silicon photonic integrated circuit for use in fiber optic communications. Fine pitch copper pillars... 
Integrated circuits | Integrated optics | Mach-Zehnder Modulator | Silicon photonics | Optical modulation | 50Gb/s | Optical waveguides | High-speed optical techniques | Mach-Zehnder modulator | 50 Gb/s | FUTURE | OPTICS | TELECOMMUNICATIONS | silicon photonics | ENGINEERING, ELECTRICAL & ELECTRONIC | Optical fibers | Lasers | Electronics | Silicon | Lanes | Devices | Channels | Photonics
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4. Full Text Silicon Photonics R&D and Manufacturing on 300-mm Wafer Platform
by Boeuf, Frederic and Cremer, Sebastien and Temporiti, Enrico and Fere, Massimo and Shaw, Mark and Baudot, Charles and Vulliet, Nathalie and Pinguet, Thierry and Mekis, Attila and Masini, Gianlorenzo and Petiton, Herve and Le Maitre, Patrick and Traldi, Matteo and Maggi, Luca
Journal of Lightwave Technology, ISSN 0733-8724, 01/2016, Volume 34, Issue 2, pp. 286 - 295
Industrial implementation of a silicon photonics platform using 300-mm SOI wafers and aiming at 100 Gb/s aggregate data-rate application is demonstrated. The... 
Optical fibers | Silicon photonics | optical communications | optical transceivers | CMOS integrated circuits | Assembly | Silicon Photonics | OPTICS | TELECOMMUNICATIONS | silicon photonics | Optical transceivers | ENGINEERING, ELECTRICAL & ELECTRONIC
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5. Full Text Analytical Model for the Inversion Gate Capacitance of DG and UTBB MOSFETs at the Quantum Capacitance Limit
by Hiblot, Gaspard and Rafhay, Quentin and Boeuf, Frederic and Ghibaudo, Gerard
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2015, Volume 62, Issue 5, pp. 1375 - 1382
In this paper, a model of gate capacitance is proposed for ultrathin-body-BOX and double-gate MOSFETs with light mass channel materials. First, the model is... 
MOSFET | compact model | III--V | Logic gates | Energy states | Quantum capacitance | Mathematical model | Equations | double gate (DG) | ultrathin-body BOX (UTBB) | III - V | quantum capacitance | VOLTAGE | PHYSICS, APPLIED | III-V | SOI MOSFETS | PERFORMANCE | ENGINEERING, ELECTRICAL & ELECTRONIC | Metal oxide semiconductor field effect transistors | Gates (Electronics) | Research | Perturbation theory | Energy levels | Computer simulation | Mathematical analysis | Capacitance | Channels | MOSFETs | Gates
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6. Full Text QPSK Modulation in the O-Band Using a Single Dual-Drive Mach-Zehnder Silicon Modulator
by Perez-Galacho, Diego and Bramerie, Laurent and Baudot, Charles and Chaibi, Mohamed and Messaoudene, Sonia and Vulliet, Nathalie and Vivien, Laurent and Boeuf, Frederic and Peucheret, Christophe and Marris-Morini, Delphine
Journal of Lightwave Technology, ISSN 0733-8724, 09/2018, Volume 36, Issue 18, pp. 3935 - 3940
Keeping up with bandwidth requirements in next generation short- and long-reach optical communication systems will require migrating from simple modulation... 
Advanced modulation formats | silicon modulators | Phase shift keying | Constellation diagram | Lithium niobate | Silicon | optical transmitters | integrated optics | silicon photonics | Optical waveguides | coherent optical communications | RESEARCH-AND-DEVELOPMENT | SIGNALS | TELECOMMUNICATIONS | OPTICAL MODULATOR | ENGINEERING, ELECTRICAL & ELECTRONIC | PLATFORM | GENERATION | OPTICS | Mach-Zehnder interferometers | Keying | Signal generation | Modulation | Lithium niobates | Bandwidth | Optical communication | On-Off Keying | Photonic | Engineering Sciences | Optics
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7. Full Text III-V/Si Hybrid MOS Optical Phase Shifter for Si Photonic Integrated Circuits
by Takenaka, Mitsuru and Han, Jae-Hoon and Boeuf, Frederic and Park, Jin-Kwon and Li, Qiang and Ho, Chong Pei and Lyu, Dongsheng and Ohno, Shuhei and Fujikata, Junichi and Takahashi, Shigeki and Takagi, Shinichi
Journal of Lightwave Technology, ISSN 0733-8724, 03/2019, Volume 37, Issue 5, pp. 1474 - 1483
We present a novel optical phase modulation scheme on a Si photonic platform that uses a III-V/Si hybrid metal-oxide-semiconductor (MOS) capacitor formed by... 
Optical interferometry | Optical switches | Phase shifters | heterogeneous integration | Si photonics | optical phase shifter | III-V compound semiconductor | Electronic-photonic integration | photonic neural network | Optical variables control | Silicon | optical modulator | Optical modulation | Optical refraction | optical switch | MACH-ZEHNDER MODULATOR | CARRIER-DEPLETION | INP | TELECOMMUNICATIONS | GAAS | ENGINEERING, ELECTRICAL & ELECTRONIC | ULTRA-COMPACT | REFRACTIVE-INDEX | opticalmodulator | OPTICS | Phase modulation | Capacitors | Refractivity | Accumulation | Aluminum oxide | Photonics | Integrated circuits | Mach-Zehnder interferometers | Gallium indium arsenide phosphide | Absorption | Numerical analysis | Atomic layer deposition | Neural networks | Optical switching | Machine learning | Chemical bonds | Bonding | Electrons
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8. Full Text Broadband Polarization Beam Splitter on a Silicon Nitride Platform for O-Band Operation
by Guerber, Sylvain and Alonso-Ramos, Carlos and Benedikovic, Daniel and Duran-Valdeiglesias, Elena and Le Roux, Xavier and Vulliet, Nathalie and Cassan, Eric and Marris-Morini, Delphine and Baudot, Charles and Boeuf, Frederic and Vivien, Laurent
IEEE Photonics Technology Letters, ISSN 1041-1135, 10/2018, Volume 30, Issue 19, pp. 1679 - 1682
Wideband polarization beam splitters (PBS) are a key building block in polarization management circuits for wavelength division multiplexing applications. A... 
Silicon compounds | Couplings | wavelength division multiplexing | Optical polarization | polarization beam splitter | silicon nitride | photonic integrated circuits | Silicon | silicon photonics | Wideband | Erbium | Photonics | PHYSICS, APPLIED | DIRECTIONAL COUPLER | WAVE-GUIDE | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC | Polarization | Broadband | Insertion loss | Silicon nitride | Birefringence | Wavelength division multiplexing | Configurations | Three dimensional models | Directional couplers | Beam splitters | Design optimization | Photonic | Optics | Micro and nanotechnologies | Microelectronics | Engineering Sciences | Materials
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9. Full Text Accurate Boundary Condition for Short-Channel Effect Compact Modeling in MOS Devices
by Hiblot, Gaspard and Dutta, Tapas and Rafhay, Quentin and Lacord, Joris and Akbal, Madjid and Boeuf, Frederic and Ghibaudo, Gerard
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2015, Volume 62, Issue 1, pp. 28 - 35
In this paper, the boundary conditions at the edges of the junctions are discussed, and their consequences on the compact modeling of short-channel effects... 
short-channel effects (SCEs) | Electric potential | nanowire (NW) | Boundary conditions | Approximation methods | Equations | effective built-in potential | Semiconductor process modeling | Compact model | Mathematical model | fully depleted | Junctions | double gate (DG) | junctions | PHYSICS, APPLIED | SOI MOSFETS | PERFORMANCE | ENGINEERING, ELECTRICAL & ELECTRONIC | TRANSISTORS | DOUBLE-GATE MOSFETS | PUNCHTHROUGH | THRESHOLD VOLTAGE | Models | Engineering Sciences | Micro and nanotechnologies | Microelectronics
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10. Full Text Identification of a Novel Protein-Protein Interaction Motif Mediating Interaction of GPCR-Associated Sorting Proteins with G Protein-Coupled Receptors
by Bornert, Olivier and Møller, Thor C and Boeuf, Julien and Candusso, Marie-Pierre and Wagner, Renaud and Martinez, Karen L and Simonin, Frederic
PLoS ONE, ISSN 1932-6203, 02/2013, Volume 8, Issue 2, pp. e56336 - e56336
GPCR desensitization and down-regulation are considered key molecular events underlying the development of tolerance in vivo. Among the many regulatory... 
BETA-2-ADRENERGIC RECEPTOR | SNX1 | ARRESTIN | TOLERANCE | GASP | MULTIDISCIPLINARY SCIENCES | RHODOPSIN | RESONANCE SPECTROSCOPY | DELTA-OPIOID RECEPTOR | BINDING | Cell Line | Peptides - chemistry | Receptors, G-Protein-Coupled - metabolism | Vesicular Transport Proteins - metabolism | Humans | Vesicular Transport Proteins - chemistry | Protein Interaction Mapping | Carrier Proteins - metabolism | Peptides - metabolism | Protein Binding | Carrier Proteins - chemistry | Protein Interaction Domains and Motifs | Receptors, G-Protein-Coupled - chemistry | Proteins | G proteins | Goods and services tax | Analysis | Protein-protein interactions | Biotechnology | Immunoprecipitation | G protein-coupled receptors | Desensitization | Molecular structure | Peptides | Narcotics | Laboratories | Genes | Cloning | Amino acids | Receptors | Conserved sequence | Mutagenesis | Down-regulation | Synthetic peptides | Surface plasmon resonance | Protein transport | Protein interaction | Nanotechnology | Regulatory proteins | Structure-function relationships | Index Medicus
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11. Full Text Low voltage 25Gbps silicon Mach-Zehnder modulator in the O-band
by Perez-Galacho, Diego and Baudot, Charles and Hirtzlin, Tifenn and Messaoudène, Sonia and Vulliet, Nathalie and Crozat, Paul and Boeuf, Frederic and Vivien, Laurent and Marris-Morini, Delphine
Optics Express, ISSN 1094-4087, 05/2017, Volume 25, Issue 10, pp. 11217 - 11222
In this work, a 25 Gb ps silicon push-pull Mach-Zehnder modulator operating in the O-Band (1260 nm - 1360 nm) of optical communications and fabricated on a... 
COMPACT | PHOTONIC BICMOS | JUNCTIONS | DRIVER | NETWORKS | OPTICS | ELECTROOPTIC MODULATOR
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12. Full Text Ring resonator designed for biosensing applications manufactured on 300 mm SOI in an industrial environment
by Calvo, M and Guerber, S and Beaudin, G and Canva, M and Romeo, PR and Baudot, C and Boeuf, F and Charette, PG and Orobtchouk, R and Monfray, S
JAPANESE JOURNAL OF APPLIED PHYSICS, ISSN 0021-4922, 04/2019, Volume 58, Issue SB, p. SBBE02
This paper reports on the design and characterization of a silicon nitride ring resonator-based device for biosensing manufactured with the STMicroelectronics... 
COMPACT | PHYSICS, APPLIED | WAVE-GUIDE | SILICON | Life Sciences
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13. Full Text Roadmap on silicon photonics
by Thomson, David and Zilkie, Aaron and Bowers, John E and Komljenovic, Tin and Reed, Graham T and Vivien, Laurent and Marris-Morini, Delphine and Cassan, Eric and Virot, Léopold and Fédéli, Jean-Marc and Hartmann, Jean-Michel and Schmid, Jens H and Xu, Dan-Xia and Boeuf, Frédéric and O'Brien, Peter and Mashanovich, Goran Z and Nedeljkovic, M
Journal of Optics (United Kingdom), ISSN 2040-8978, 07/2016, Volume 18, Issue 7, p. 73003
Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a... 
silicon technology | optical communication | integrated optics | silicon photonics | LASERS | PLATFORMS | OPTICAL MODULATION | ELECTROABSORPTION MODULATOR | COUPLERS | FIBERS | PHOTODETECTORS | WAVE-GUIDES | WAVELENGTH | OPTICS | RECEIVER
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14. Full Text Modeling TID Effects in Mach-Zehnder Interferometer Silicon Modulator for HL-LHC Data Transmission Applications
by Seif El Nasr-Storey, Sarah and Boeuf, Frederic and Baudot, Charles and Detraz, Stephane and Fedeli, Jean Marc and Marris-Morini, Delphine and Olantera, Lauri and Pezzullo, Giuseppe and Sigaud, Christophe and Soos, Csaba and Troska, Jan and Vasey, Francois and Vivien, Laurent and Zeiler, Marcel and Ziebell, Melissa
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2015, Volume 62, Issue 6, pp. 2971 - 2978
High-speed Mach-Zehnder interferometer silicon modulators were exposed to a total ionizing dose of 1.3 MGy, levels comparable to the worst radiation levels for... 
Mach-Zehnder interferometers | Radiation effects | Ionizing radiation | Numerical simulations | Large Hadron Collider | radiation hardening | Modulation | Silicon-on-insulator | Silicon photonics | Semiconductor process modeling | silicon-on-insulator | silicon photonics | NUCLEAR SCIENCE & TECHNOLOGY | ENGINEERING, ELECTRICAL & ELECTRONIC | Usage | Research | Interferometers
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15. Full Text Plasma wave detection of terahertz radiation by silicon field effects transistors: Responsivity and noise equivalent power
by Shur, M and Tauk, R and Boubanga, S and Meziani, Y and Rumyantsev, S and Skotnicki, T and Fenouillet-Beranger, C and Coquillat, D and Teppe, F and Gallon, C and Boeuf, F and Knap, W and Maude, D
Applied Physics Letters, ISSN 0003-6951, 12/2006, Volume 89, Issue 25, pp. 253511 - 253511-3
Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120 - 300 nm have been studied as room temperature plasma wave... 
NONRESONANT DETECTION | PHYSICS, APPLIED | ELECTRON-MOBILITY | Condensed Matter | Materials Science | Physics
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16. Full Text Multi-V-T UTBB FDSOI Device Architectures for Low-Power CMOS Circuit
by Noel, JP and Thomas, O and Jaud, MA and Weber, O and Poiroux, T and Fenouillet-Beranger, C and Rivallin, P and Scheiblin, P and Andrieu, F and Vinet, M and Rozeau, O and Boeuf, F and Faynot, O and Amara, A
IEEE TRANSACTIONS ON ELECTRON DEVICES, ISSN 0018-9383, 08/2011, Volume 58, Issue 8, pp. 2473 - 2482
This paper analyzes the potential of fully depleted silicon-on-insulator (FDSOI) technology as a multiple threshold voltage V T platform for digital circuits... 
ultra-thin body and buried oxide (BOX) FDSOI (UTBB FDSOI) | HIGH-K | PHYSICS, APPLIED | SILICON | 32NM NODE | THIN BOX | well implant | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC | GROUND PLANE | METAL GATE | multi-V-T | Back plane (BP) | TECHNOLOGY | CMOS | Platforms | Circuit design | Threshold voltage | Devices | Channels | Digital circuits | Gates (circuits)
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17. Full Text Refined Conformal Mapping Model for MOSFET Parasitic Capacitances Based on Elliptic Integrals
by Hiblot, Gaspard and Rafhay, Quentin and Boeuf, Frederic and Ghibaudo, Gerard
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2015, Volume 62, Issue 3, pp. 972 - 979
In this paper, the main MOSFET parasitic capacitances of planar devices (i.e., bulk, Fully depleted silicon-on-insulator (FDSOI), and planar double gate) are... 
MOSFET | Transforms | elliptic integrals | roadmap | Electrodes | Semiconductor device modeling | CMOS | compact model | electrostatic | Conformal mapping | Model for Assessment of CMOS Technologies and Roadmaps (MASTAR) | Capacitance | Mathematical model | parasitic capacitance | conformal mapping | PHYSICS, APPLIED | PERFORMANCE | ENGINEERING, ELECTRICAL & ELECTRONIC | IMPACT | FRINGING-CAPACITANCE | DEVICES | FINFETS | THRESHOLD VOLTAGE | SUBMICROMETER MOSFETS | Metal oxide semiconductor field effect transistors | Finite element method | Silicon-on-isolator | Usage | Research | Engineering Sciences | Micro and nanotechnologies | Microelectronics
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18. Full Text L-shaped fiber-chip grating couplers with high directionality and low reflectivity fabricated with deep-UV lithography
by Benedikovic, Daniel and Alonso-Ramos, Carlos and Pérez-Galacho, Diego and Guerber, Sylvain and Vakarin, Vladyslav and Marcaud, Guillaume and Le Roux, Xavier and Cassan, Eric and Marris-Morini, Delphine and Cheben, Pavel and Boeuf, Frédéric and Baudot, Charles and Vivien, Laurent
Optics Letters, ISSN 0146-9592, 09/2017, Volume 42, Issue 17, pp. 3439 - 3442
Grating couplers enable position-friendly interfacing of silicon chips by optical fibers. The conventional coupler designs call upon comparatively complex... 
SILICON-ON-INSULATOR | DESIGN | OPTICS | INTERLEAVED TRENCHES | EFFICIENCY | Photonic | Optics | Micro and nanotechnologies | Microelectronics | Engineering Sciences
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19. Full Text Innovative Materials, Devices, and CMOS Technologies for Low-Power Mobile Multimedia
by Skotnicki, Thomas and Fenouillet-Beranger, Claire and Gallon, Claire and Boeuf, Frederic and Monfray, Stephane and Payet, Fabrice and Pouydebasque, Arnaud and Szczap, Melanie and Farcy, Alexis and Arnaud, Franck and Clerc, Sylvain and Sellier, Manuel and Cathignol, Augustin and Schoellkopf, Jean-Pierre and Perea, Ernesto and Ferrant, Richard and Mingam, Herve
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2008, Volume 55, Issue 1, pp. 96 - 130
The paradigm and the usage of CMOS are changing, and so are the requirements at all levels, from transistor to an entire CMOS system. The traditional drivers,... 
emerging technologies | MOSFET | mobility | 32 nm | Materials | FinFET | H-K | multithreshold voltage | Mobile communication | static noise margin (SNM) | roadmap | germanium | variability | gate dielectric | CMOS | thin body | nanotechnologies | CMOS integrated circuits | fully depleted silicon-on-insulator (FDSOI) | strain | mobile | technology | SRAM | double gate | metallic gate | silicon-on-nothing (SON) | multimedia | silicon | Logic gates | CMOS technology | low power | shallow junction | Power dissipation | Transistors | thin BOX | Emerging technologies | Silicon-on-nothing (SON) | Variability | Fully depleted silicon-on-insulator (FDSOI) | Mobility | Multithreshold voltage | Technology | Silicon | Gate dielectric | Shallow junction | Multimedia | Double gate | Static noise margin (SNM) | Thin body | Low power | Mobile | Metallic gate | Strain | Thin BOX | Roadmap | Nanotechnologies | Germanium | LIMITS | PHYSICS, APPLIED | PERFORMANCE | OPPORTUNITIES | FIELD-EFFECT TRANSISTORS | TRANSPORT | power dissipation | MODEL | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC | PUNCHTHROUGH | VOLTAGE-DOPING TRANSFORMATION | Metal oxide semiconductor field effect transistors | Silicon-on-isolator | Design and construction | Comparative analysis | Complementary metal oxide semiconductors | Pictures | Drivers | Semiconductor devices | Manufacturability | Devices | Density
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20. Full Text MASTAR VA: A predictive and flexible compact model for digital performances evaluation of CMOS technology with conventional CAD tools
by Lacord, Joris and Ghibaudo, Gérard and Boeuf, Frédéric
Solid State Electronics, ISSN 0038-1101, 01/2014, Volume 91, pp. 137 - 146
This work presents the methodology employed in order to make the MASTAR model (Model for Assessment of CMOS Technologies And Roadmaps ), used within the frame... 
Drain current | CMOS | Benchmarking | Compact model | CAD tools | VARIABILITY | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MOBILITY | THRESHOLD VOLTAGE | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC | Transistors | Complementary metal oxide semiconductors | Computer-aided design | Assessments | Engineering Sciences | Micro and nanotechnologies | Microelectronics
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