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Nature Photonics, ISSN 1749-4885, 08/2017, Volume 11, Issue 8, pp. 486 - 490
An optical modulator integrated on silicon is a key enabler for high-performance optical interconnects(1-6). However, Si-based optical modulators suffer from... 
REFRACTIVE-INDEX | PHYSICS, APPLIED | OPTICS | MACH-ZEHNDER MODULATOR | III-V | SILICON | Metal oxides | Optical interconnects | Gallium indium arsenide phosphide | Phase shift | Modulation | Refractivity | Silicon | Interconnections | Modulators | Photonics
Journal Article
Journal of Lightwave Technology, ISSN 0733-8724, 03/2015, Volume 33, Issue 6, pp. 1247 - 1254
This paper presents a 50 Gb/s per lane hybrid BiCMOS and silicon photonic integrated circuit for use in fiber optic communications. Fine pitch copper pillars... 
Integrated circuits | Integrated optics | Mach-Zehnder Modulator | Silicon photonics | Optical modulation | 50Gb/s | Optical waveguides | High-speed optical techniques | Mach-Zehnder modulator | 50 Gb/s | FUTURE | OPTICS | TELECOMMUNICATIONS | silicon photonics | ENGINEERING, ELECTRICAL & ELECTRONIC | Optical fibers | Lasers | Electronics | Silicon | Lanes | Devices | Channels | Photonics
Journal Article
Journal of Lightwave Technology, ISSN 0733-8724, 01/2016, Volume 34, Issue 2, pp. 286 - 295
Industrial implementation of a silicon photonics platform using 300-mm SOI wafers and aiming at 100 Gb/s aggregate data-rate application is demonstrated. The... 
Optical fibers | Silicon photonics | optical communications | optical transceivers | CMOS integrated circuits | Assembly | Silicon Photonics | OPTICS | TELECOMMUNICATIONS | silicon photonics | Optical transceivers | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2015, Volume 62, Issue 5, pp. 1375 - 1382
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2015, Volume 62, Issue 1, pp. 28 - 35
Journal Article
Journal Article
Optics Express, ISSN 1094-4087, 05/2017, Volume 25, Issue 10, pp. 11217 - 11222
In this work, a 25 Gb ps silicon push-pull Mach-Zehnder modulator operating in the O-Band (1260 nm - 1360 nm) of optical communications and fabricated on a... 
COMPACT | PHOTONIC BICMOS | JUNCTIONS | DRIVER | NETWORKS | OPTICS | ELECTROOPTIC MODULATOR
Journal Article
JAPANESE JOURNAL OF APPLIED PHYSICS, ISSN 0021-4922, 04/2019, Volume 58, Issue SB, p. SBBE02
This paper reports on the design and characterization of a silicon nitride ring resonator-based device for biosensing manufactured with the STMicroelectronics... 
COMPACT | PHYSICS, APPLIED | WAVE-GUIDE | SILICON | Life Sciences
Journal Article
Journal of Optics (United Kingdom), ISSN 2040-8978, 07/2016, Volume 18, Issue 7, p. 73003
Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a... 
silicon technology | optical communication | integrated optics | silicon photonics | LASERS | PLATFORMS | OPTICAL MODULATION | ELECTROABSORPTION MODULATOR | COUPLERS | FIBERS | PHOTODETECTORS | WAVE-GUIDES | WAVELENGTH | OPTICS | RECEIVER
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2006, Volume 89, Issue 25, pp. 253511 - 253511-3
Si metal oxide semiconductor field effect transistors (MOSFETs) with the gate lengths of 120 - 300 nm have been studied as room temperature plasma wave... 
NONRESONANT DETECTION | PHYSICS, APPLIED | ELECTRON-MOBILITY | Condensed Matter | Materials Science | Physics
Journal Article
IEEE TRANSACTIONS ON ELECTRON DEVICES, ISSN 0018-9383, 08/2011, Volume 58, Issue 8, pp. 2473 - 2482
This paper analyzes the potential of fully depleted silicon-on-insulator (FDSOI) technology as a multiple threshold voltage V T platform for digital circuits... 
ultra-thin body and buried oxide (BOX) FDSOI (UTBB FDSOI) | HIGH-K | PHYSICS, APPLIED | SILICON | 32NM NODE | THIN BOX | well implant | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC | GROUND PLANE | METAL GATE | multi-V-T | Back plane (BP) | TECHNOLOGY | CMOS | Platforms | Circuit design | Threshold voltage | Devices | Channels | Digital circuits | Gates (circuits)
Journal Article
Optics Letters, ISSN 0146-9592, 09/2017, Volume 42, Issue 17, pp. 3439 - 3442
Grating couplers enable position-friendly interfacing of silicon chips by optical fibers. The conventional coupler designs call upon comparatively complex... 
SILICON-ON-INSULATOR | DESIGN | OPTICS | INTERLEAVED TRENCHES | EFFICIENCY | Photonic | Optics | Micro and nanotechnologies | Microelectronics | Engineering Sciences
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2008, Volume 55, Issue 1, pp. 96 - 130
The paradigm and the usage of CMOS are changing, and so are the requirements at all levels, from transistor to an entire CMOS system. The traditional drivers,... 
emerging technologies | MOSFET | mobility | 32 nm | Materials | FinFET | H-K | multithreshold voltage | Mobile communication | static noise margin (SNM) | roadmap | germanium | variability | gate dielectric | CMOS | thin body | nanotechnologies | CMOS integrated circuits | fully depleted silicon-on-insulator (FDSOI) | strain | mobile | technology | SRAM | double gate | metallic gate | silicon-on-nothing (SON) | multimedia | silicon | Logic gates | CMOS technology | low power | shallow junction | Power dissipation | Transistors | thin BOX | Emerging technologies | Silicon-on-nothing (SON) | Variability | Fully depleted silicon-on-insulator (FDSOI) | Mobility | Multithreshold voltage | Technology | Silicon | Gate dielectric | Shallow junction | Multimedia | Double gate | Static noise margin (SNM) | Thin body | Low power | Mobile | Metallic gate | Strain | Thin BOX | Roadmap | Nanotechnologies | Germanium | LIMITS | PHYSICS, APPLIED | PERFORMANCE | OPPORTUNITIES | FIELD-EFFECT TRANSISTORS | TRANSPORT | power dissipation | MODEL | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC | PUNCHTHROUGH | VOLTAGE-DOPING TRANSFORMATION | Metal oxide semiconductor field effect transistors | Silicon-on-isolator | Design and construction | Comparative analysis | Complementary metal oxide semiconductors | Pictures | Drivers | Semiconductor devices | Manufacturability | Devices | Density
Journal Article
Solid State Electronics, ISSN 0038-1101, 01/2014, Volume 91, pp. 137 - 146
This work presents the methodology employed in order to make the MASTAR model (Model for Assessment of CMOS Technologies And Roadmaps ), used within the frame... 
Drain current | CMOS | Benchmarking | Compact model | CAD tools | VARIABILITY | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MOBILITY | THRESHOLD VOLTAGE | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC | Transistors | Complementary metal oxide semiconductors | Computer-aided design | Assessments | Engineering Sciences | Micro and nanotechnologies | Microelectronics
Journal Article
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