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Nature Communications, ISSN 2041-1723, 12/2019, Volume 10, Issue 1, pp. 81 - 9
Silver/copper-filament-based resistive switching memory relies on the formation and disruption of a metallic conductive filament (CF) with relatively large... 
NANOPARTICLES | FORMATION MECHANISM | OXIDE | FILAMENTS | RETENTION | MULTIDISCIPLINARY SCIENCES | REAL-TIME OBSERVATION | NETWORKS | LONG-TERM POTENTIATION | PLASTICITY | Data storage | Ion transport | Surface diffusion | Service life assessment | Switching | Computer memory | Self diffusion | Engineering | Silver | Lifetime | Computation | Long term memory | Disruption | Diffusion | Copper | Predictive control
Journal Article
Journal Article
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, ISSN 0027-8424, 03/2019, Volume 116, Issue 10, pp. 4123 - 4128
Journal Article
Faraday Discussions, ISSN 1359-6640, 2/2019, Volume 213, pp. 87 - 98
Resistive switching random-access memory (ReRAM) is one of the most promising technologies for non-volatile memories. Thanks to the low power and high speed... 
CHEMISTRY, PHYSICAL | PART I | SILICON-OXIDE | RRAM | MEMORY | HFOX | Memory devices | Stability | Random access memory | Variations | Hafnium oxide | Density | Switching | Electrodes | CMOS | Electrode materials | Materials engineering | Computation | Endurance
Journal Article
Faraday Discussions, ISSN 1359-6640, 02/2019, Volume 213, pp. 87 - 98
Resistive switching random-access memory (ReRAM) is one of the most promising technologies for non-volatile memories. Thanks to the low power and high speed... 
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2018, Volume 65, Issue 1, pp. 122 - 128
Journal Article
Faraday discussions, 10/2018
Resistive switching random-access memory (ReRAM) is one of the most promising technologies for non-volatile memories. Thanks to the low power and high speed... 
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 2020, pp. 1 - 7
IEEE Trans. Electron Devices (2020) In-memory computing with crosspoint resistive memory arrays has been shown to accelerate data-centric computations such as... 
Journal Article
by Clavenna, Antonio and Seletti, Elena and Cartabia, Massimo and Didoni, Anna and Fortinguerra, Filomena and Sciascia, Teresa and Brivio, Luca and Malnis, Daniela and Bonati, Maurizio and Dana, Mariella and Brenna, Valeria and Ferrato, Farida and Montresor, Claudio and Percudani, Mauro and Fisogni, Allegra and Vergani, Lorena and Grecchi, Alessandro and Amman, Francesca and Asi, Hakam and Avisani, Antonella and Banfi, Patrizio and Battilana, Maria Pia and Berardi, Carla and Beretta, Giuseppina and Beretta, Paola Beniamina and Bertoglio, Maria Enrica and Bigalli, Lucia and Bognetti, Emilio and Boschetti, Marzia and Bricalli, Dorella and Buratti, Pietro and Buzzi, Sonia and Caccia, Daniela and Caldarulo, Gloria and Camiletti, Marina Irene and Cappuccilli, Maria Luisa and Carcano, Maria Maura and Carmine, Valentina and Cenci, Antonio and Civardi, Alberto and Cofano, Daniela and Colavita, Giuseppina and Colletta, Francesca and Colombo, Mirella and Cordoni, Annalisa and Corno, Anna and Crupi, Lina and Dall'Oglio, Andrea and Damiani, Beatrice and De Angelis, Monica and De Biase, Debora and De Sanctis, Marina and Di Cosimo, Maria Elisabetta and Di Francesco, Laura and Di Leo, Mirella and Dozzi, Massimiliano and Elicio, Maria Teresa and Elli, Patrizia and Felice, Giuseppe and Ferrari, Loredana and Finizio, Valentina and Flumine, Paola and Foschi, Cinzia and Garavaglia, Mariacarla and Gaslini, Patrizia and Ghezzi, Riccardo and Giuliani, Maria Grazia and Giurgola, Anna Immacolata and Giussani, Marco and Grassi, Angela Rossana and Gualdoni, Emanuela and Guidi, Tiziana and Gulli, Simonetta and Hamade, Jarir Hussein and Jaber, Talal and Jischke, Gudrun and Lambiase, Roberto and Libretti, Maria Cristina and Lodi, Maria Luisa and Lovallo, Maria Teresa and Lukezic, Monica and Mancuso, Giovanna and Marciante, Ermenegildo and Marziani, Edgardo and Metta, Maria Gabriella and Miotto, Giovanna and Moioli, Marco and Monti, Silvia Angela and Morello, Anna Cinthia and Moretto, Rosanna and Nicolini, Gloria and Oldani, Patrizia and Paganuzzi, Paolo and Palmieri, Marina and Pedrotti, Laura and Pellegrini, Maria Gabriella and Piacentini, Elena and Poggi, Luisa Maria and Porta, Norberto and Portioli, Paola and ... and Postnatal Depression Study Grp and Postnatal Depression Study Group and on behalf of the Postnatal Depression Study Group
BMC Psychiatry, ISSN 1471-244X, 01/2017, Volume 17, Issue 1, p. 42
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 04/2020, Volume 67, Issue 4, pp. 1466 - 1470
In-memory computing with cross-point arrays of resistive memory is a promising technique for typical tasks, such as the training and inference of deep... 
PageRank | in-memory computing | Eigenvector | resistive switching memory (RRAM) | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2019, Volume 66, Issue 9, pp. 3802 - 3808
Resistive-switching random access memory (RRAM) based on Cu or Ag filament is a promising selector device for high-density crosspoint arrays. These devices... 
Electrodes | Analytical model | Analytical models | retention time | Computational modeling | Switches | Predictive models | selective device | Mathematical model | volatile switching | Switching circuits | neuromorphic computing | SILICON-OXIDE | PHYSICS, APPLIED | BEHAVIOR | LONG-TERM POTENTIATION | PLASTICITY | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2019, Volume 66, Issue 9, pp. 3795 - 3801
Resistive-switching random access memory (RRAM) devices based on filamentary switching are attracting widespread interest for their unique properties, such as... 
Electrodes | Crosspoint array | surface self-diffusion | diffusion model | Europe | Switches | Tunneling | Ions | Threshold voltage | Nanoscale devices | selector device | volatile switching | PHYSICS, APPLIED | SILVER | STATE | ENGINEERING, ELECTRICAL & ELECTRONIC | SILICON-OXIDE | SELECTOR | DYNAMICS | SURFACE
Journal Article
2020 2nd IEEE International Conference on Artificial Intelligence Circuits and Systems (AICAS), 08/2020, pp. 26 - 30
Thanks to the high parallelism endowed by physical rules, in-memory computing with crosspoint resistive memory arrays has been applied to accelerate typical... 
Computational modeling | Programming | PageRank | In-memory computing | Eigenvalues and eigenfunctions | Transistors | Mathematical model | Sparse matrices | Integrated circuit modeling | resistive switching memory (RRAM) | eigenvector
Conference Proceeding
05/2020
Advanced Intelligent Systems (2020) In-memory computing with crosspoint resistive memory arrays has gained enormous attention to accelerate the matrix-vector... 
Journal Article
05/2020
Science Advances: Vol. 6, no. 5, eaay2378 (2020) Machine learning has been getting a large attention in the recent years, as a tool to process big data... 
Journal Article
SCIENCE ADVANCES, ISSN 2375-2548, 01/2020, Volume 6, Issue 5, p. eaay2378
Machine learning has been getting attention in recent years as a tool to process big data generated by the ubiquitous sensors used in daily life. High-speed,... 
MULTIDISCIPLINARY SCIENCES
Journal Article