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ACS Nano, ISSN 1936-0851, 12/2011, Volume 5, Issue 12, pp. 9703 - 9709
Journal Article
NANO LETTERS, ISSN 1530-6984, 12/2011, Volume 11, Issue 12, pp. 5148 - 5153
Single-layer molybdenum disulfide (MoS2) is a newly emerging two-dimensional semiconductor with a potentially wide range of applications in the fields of... 
Two-dimensional materials | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | dichalcogenides | MoS2 | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | ELECTRON-DIFFRACTION | NANOSCIENCE & NANOTECHNOLOGY | transmission electron microscopy | CHEMISTRY, MULTIDISCIPLINARY
Journal Article
Nano Letters, ISSN 1530-6984, 12/2011, Volume 11, Issue 12, pp. 5148 - 5153
Journal Article
ACS Nano, ISSN 1936-0851, 02/2013, Volume 7, Issue 2, pp. 1072 - 1080
Femtosecond transient absorption spectroscopy and microscopy were employed to study exciton dynamics in suspended and Si₃N₄ substrate-supported monolayer and... 
MoS | atomically thin 2D crystal | transient absorption spectroscopy | quantum confinement | surface defects | transient absorption microscopy | exciton dynamics
Journal Article
Scientific Reports, ISSN 2045-2322, 12/2018, Volume 8, Issue 1, pp. 7178 - 12
The development of devices that can modulate their conductance under the application of electrical stimuli constitutes a fundamental step towards the... 
CONDUCTANCE CHANGE | MEMORY | VOLTAGE-TIME DILEMMA | SYNAPSES | KINETICS | MULTIDISCIPLINARY SCIENCES | NEURONS | NEURAL-NETWORK | CLASSIFICATION | RRAM | MODEL | Conductance | Work capacity | Neural networks | Electrical stimuli
Journal Article
Nanotechnology, 09/2017, Volume 28, Issue 39, p. 395202
Resistance switching devices, whose operation is driven by formation (SET) and dissolution (RESET) of conductive paths shorting and disconnecting the two metal... 
Journal Article
Nanotechnology, ISSN 0957-4484, 09/2017, Volume 28, Issue 39, p. 395202
Journal Article
SCIENTIFIC REPORTS, ISSN 2045-2322, 04/2019, Volume 9, Issue 1, pp. 6310 - 9
Random telegraph noise is a widely investigated phenomenon affecting the reliability of the reading operation of the class of memristive devices whose... 
RRAM | MODEL | BEHAVIOR | MULTIDISCIPLINARY SCIENCES | Noise | Filaments | Stochasticity
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 11/2015, Volume 147, pp. 104 - 107
The retention behavior of HfO 2 -based resistive switching memory cells (RRAM) is characterized as a function of Al doping concentration, which was previously... 
Aluminum | Doping | Hafnium oxide | RRAM | Retention
Journal Article
ACS NANO, ISSN 1936-0851, 02/2013, Volume 7, Issue 2, pp. 1072 - 1080
Journal Article
Nanotechnology, ISSN 0957-4484, 09/2017, Volume 28, Issue 39
Resistance switching devices, whose operation is driven by formation (SET) and dissolution (RESET) of conductive paths shorting and disconnecting the two metal... 
HfO | random telegraph noise | modeling | memristor | doping | RRAM | retention | PHYSICS, APPLIED | HfO2 | OPERATIONS | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | NOISE | MODEL | BIPOLAR | MEMORIES | FILMS
Journal Article
by Sirunyan, A.M and Tumasyan, A and Adam, W and Asilar, E and Bergauer, T and Brandstetter, J and Brondolin, E and Dragicevic, M and Erö, J and Flechl, M and Friedl, M and Frühwirth, R and Ghete, V.M and Hartl, C and Hörmann, N and Hrubec, J and Jeitler, M and König, A and Krätschmer, I and Liko, D and Matsushita, T and Mikulec, I and Rabady, D and Rad, N and Rahbaran, B and Rohringer, H and Schieck, J and Strauss, J and Waltenberger, W and Wulz, C.-E and Dvornikov, O and Makarenko, V and Mossolov, V and Gonzalez, J. Suarez and Zykunov, V and Shumeiko, N and Alderweireldt, S and Wolf, E.A. De and Janssen, X and Lauwers, J and Klundert, M. Van De and Haevermaet, H. Van and Mechelen, P. Van and Remortel, N. Van and Spilbeeck, A. Van and Zeid, S. Abu and Blekman, F and D'Hondt, J and Daci, N and Bruyn, I. De and Deroover, K and Lowette, S and Moortgat, S and Moreels, L and Olbrechts, A and Python, Q and Skovpen, K and Tavernier, S and Doninck, W. Van and Mulders, P. Van and Parijs, I. Van and Brun, H and Clerbaux, B and Lentdecker, G. De and Delannoy, H and Fasanella, G and Favart, L and Goldouzian, R and Grebenyuk, A and Karapostoli, G and Lenzi, T and Léonard, A and Luetic, J and Maerschalk, T and Marinov, A and Randle-Conde, A and Seva, T and Velde, C. Vander and Vanlaer, P and Vannerom, D and Yonamine, R and Zenoni, F and Zhang, F and Cornelis, T and Dobur, D and Fagot, A and Gul, M and Khvastunov, I and Poyraz, D and Salva, S and Schöfbeck, R and Tytgat, M and Driessche, W. Van and Yazgan, E and Zaganidis, N and Bakhshiansohi, H and Bondu, O and Brochet, S and Bruno, G and Caudron, A and ... and CMS collaboration and Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States) and Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Journal of Instrumentation, ISSN 1748-0221, 10/2017, Volume 12, Issue 10, pp. P10003 - P10003
The CMS apparatus was identified, a few years before the start of the LHC operation at CERN, to feature properties well suited to particle-flow (PF)... 
Large detector systems for particle and astroparticle physics | Particle identification methods | INSTRUMENTS & INSTRUMENTATION | PERFORMANCE | INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY | PHYSICS OF ELEMENTARY PARTICLES AND FIELDS
Journal Article
by Khachatryan, V and Sirunyan, A.M and Tumasyan, A and Adam, W and Asilar, E and Bergauer, T and Brandstetter, J and Brondolin, E and Dragicevic, M and Erö, J and Flechl, M and Friedl, M and Frühwirth, R and Ghete, V.M and Hartl, C and Hörmann, N and Hrubec, J and Jeitler, M and König, A and Krätschmer, I and Liko, D and Matsushita, T and Mikulec, I and Rabady, D and Rad, N and Rahbaran, B and Rohringer, H and Schieck, J and Strauss, J and Waltenberger, W and Wulz, C.-E and Dvornikov, O and Makarenko, V and Zykunov, V and Mossolov, V and Shumeiko, N and Gonzalez, J. Suarez and Alderweireldt, S and De Wolf, E.A and Janssen, X and Lauwers, J and Van De Klundert, M and Van Haevermaet, H and Van Mechelen, P and Van Remortel, N and Van Spilbeeck, A and Zeid, S. Abu and Blekman, F and D’Hondt, J and Daci, N and De Bruyn, I and Deroover, K and Lowette, S and Moortgat, S and Moreels, L and Olbrechts, A and Python, Q and Tavernier, S and Van Doninck, W and Van Mulders, P and Van Parijs, I and Brun, H and Clerbaux, B and De Lentdecker, G and Delannoy, H and Fasanella, G and Favart, L and Goldouzian, R and Grebenyuk, A and Karapostoli, G and Lenzi, T and Léonard, A and Luetic, J and Maerschalk, T and Marinov, A and Randle-conde, A and Seva, T and Velde, C. Vander and Vanlaer, P and Vannerom, D and Yonamine, R and Zenoni, F and Zhang, F and Cimmino, A and Cornelis, T and Dobur, D and Fagot, A and Garcia, G and Gul, M and Khvastunov, I and Poyraz, D and Salva, S and Schöfbeck, R and Tytgat, M and Van Driessche, W and Yazgan, E and Zaganidis, N and Bakhshiansohi, H and Beluffi, C and Bondu, O and ...
Journal of High Energy Physics, ISSN 1126-6708, 04/2017, Volume 2017, Issue 4, p. 1
  (ProQuest: ... denotes formulae and/or non-USASCII text omitted; see image) Abstract The spectra of charged particles produced within the pseudorapidity... 
Relativistic heavy ion physics | Heavy Ion Experiments | Quark Gluon Plasma
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 11/2015, Volume 147, p. 104
Display Omitted 
Memory (Computers) | Analysis
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 11/2015, Volume 147, pp. 104 - 107
The retention behavior of HfO -based resistive switching memory cells (RRAM) is characterized as a function of Al doping concentration, which was previously... 
Hafnium oxide | RRAM | Retention | Aluminum | Doping
Journal Article
by Khachatryan, V and Sirunyan, A.M and Tumasyan, A and Adam, W and Asilar, E and Bergauer, T and Brandstetter, J and Brondolin, E and Dragicevic, M and Erö, J and Flechl, M and Friedl, M and Frühwirth, R and Ghete, V.M and Hartl, C and Hörmann, N and Hrubec, J and Jeitler, M and König, A and Krätschmer, I and Liko, D and Matsushita, T and Mikulec, I and Rabady, D and Rad, N and Rahbaran, B and Rohringer, H and Schieck, J and Strauss, J and Treberer-Treberspurg, W and Waltenberger, W and Wulz, C.-E and Mossolov, V and Shumeiko, N and Suarez Gonzalez, J and Alderweireldt, S and Cornelis, T and De Wolf, E.A and Janssen, X and Knutsson, A and Lauwers, J and Luyckx, S and Van De Klundert, M and Van Haevermaet, H and Van Mechelen, P and Van Remortel, N and Van Spilbeeck, A and Abu Zeid, S and Blekman, F and D'Hondt, J and Daci, N and De Bruyn, I and Deroover, K and Heracleous, N and Lowette, S and Moortgat, F and Moortgat, S and Moreels, L and Olbrechts, A and Python, Q and Tavernier, S and Van Doninck, W and Van Mulders, P and Van Parijs, I and Brun, H and Caillol, C and Clerbaux, B and De Lentdecker, G and Delannoy, H and Delannoy, A.G and Fasanella, D and Fasanella, G and Favart, L and Goldouzian, R and Grebenyuk, A and Karapostoli, G and Lenzi, T and Lenzi, P and Léonard, A and Maerschalk, T and Marinov, A and Randle-conde, A and Seva, T and Vander Velde, C and Vanlaer, P and Yonamine, R and Zenoni, F and Zhang, J and Zhang, F and Zhang, H and Cimmino, A and Dobur, D and Fagot, A and Garcia, G and Gul, M and Mccartin, J and Poyraz, D and Salva, S and Schöfbeck, R and Tytgat, M and ... and CMS Collaboration
Physics Letters B, ISSN 0370-2693, 07/2016, Volume 758, Issue C, pp. 152 - 180
Journal Article