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Journal of Materials Processing Tech, ISSN 0924-0136, 01/2015, Volume 215, Issue 1, pp. 299 - 308
Journal Article
International Journal of Power Electronics, ISSN 1756-638X, 01/2019, Volume 10, Issue 3, pp. 187 - 211
To effectively simulate the electrical characteristics of an IGBT, it is necessary to have a good model for applications operating in a wide range of... 
Temperature dependence | Temperature | Computer simulation | Forward characteristics
Journal Article
Materials Science & Engineering B, ISSN 0921-5107, 2011, Volume 176, Issue 4, pp. 283 - 288
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 09/2016, Volume 64, pp. 494 - 501
Reliability is one of the key issues for the application of Silicon carbide (SiC) diode in high power conversion systems. For instance, in high voltage direct... 
Critical energy | Failure analysis | Avalanche | NANOSCIENCE & NANOTECHNOLOGY | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | Circuit components | Silicon carbide | Electric fields | Avalanches | Engineering Sciences
Journal Article
IEEE Transactions on Components, Packaging and Manufacturing Technology, ISSN 2156-3950, 01/2017, Volume 7, Issue 1, pp. 3 - 9
Silver sintering is used to bond five components together in order to form a piezoelectric sensor. A description is provided of the preparation of these... 
Temperature sensors | Vibrations | Silver | piezoelectric transducers | Acoustic sensors | bonding processes | Ceramics | Bonding | MODULUS | MATERIALS SCIENCE, MULTIDISCIPLINARY | transducers | POWER | ENGINEERING, MANUFACTURING | DIE-ATTACH MATERIALS | piezoelectric | ENGINEERING, ELECTRICAL & ELECTRONIC | Shear strength | Nanoindentation | Porosity
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 08/2015, Volume 55, Issue 9-10, pp. 1708 - 1713
This paper presents experimental robustness tests made on Silicon Carbide (SiC) MOSFETs and SiC Bipolar Junction Transistors (BJTs) submitted to short-circuit... 
MOSFET | Short circuit | SiC | BJT | PHYSICS, APPLIED | PERFORMANCE | DEVICES | JFET | NANOSCIENCE & NANOTECHNOLOGY | ENGINEERING, ELECTRICAL & ELECTRONIC | Circuit components | Metal oxide semiconductor field effect transistors | Silicon carbide | Analysis | Engineering Sciences
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2012, Volume 59, Issue 3, pp. 761 - 769
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 09/2017, Volume 76-77, pp. 400 - 404
The failure mode of press-pack-type packages dedicated to SiC devices is experimentally analyzed in order to investigate their use for HVDC applications.... 
NANOSCIENCE & NANOTECHNOLOGY | IGBT | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | Packaging | Silicon carbide | Engineering Sciences
Journal Article
IEEE Transactions on Industry Applications, ISSN 0093-9994, 01/2017, Volume 53, Issue 1, pp. 362 - 370
With the emergence of new power semiconductor devices, the switching speeds in power converters are increasing. The stray inductances of switching cells must,... 
Insulated gate bipolar transistors | Characterization | Inductance | stray inductance | 3-D power module | Capacitors | Switches | Logic gates | chip-on-chip | packaging | Copper | Substrates | ENGINEERING, MULTIDISCIPLINARY | INTEGRATION | ENGINEERING, ELECTRICAL & ELECTRONIC | Integrated circuits | Research | Gates (Electronics) | Semiconductor chips
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 09/2013, Volume 53, Issue 9-11, pp. 1592 - 1596
Silver sintering is a promising alternative to high melting point (HMP) solders which contain lead. Indeed, it offers better thermal and electrical properties... 
NANOSCIENCE & NANOTECHNOLOGY | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | Sintering | Thin films | Silver | Electrical properties | Short circuits | Moisture | Migration | Microelectronics | Protective | Engineering Sciences | Electric power
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 12/2017, Volume 79, pp. 288 - 296
Direct bonded copper (DBC) are produced by high temperature ( >1000 ° C) bonding between copper and a ceramic (usually alumina). They are commonly used in... 
Mechanical characterization | Power electronics | Ceramic substrates | PHYSICS, APPLIED | FINITE-ELEMENT | NANOSCIENCE & NANOTECHNOLOGY | RELIABILITY | ENGINEERING, ELECTRICAL & ELECTRONIC | Engineering Sciences
Journal Article
IEEE Transactions on Industry Applications, ISSN 0093-9994, 2016, Volume PP, Issue 99
With the emergence of new power semiconductor devices, the switching speeds in power converters are increasing. The stray inductances of switching cells must... 
Engineering Sciences
Journal Article
IEEE Transactions on Components, Packaging and Manufacturing Technology, ISSN 2156-3950, 9/2019, pp. 1 - 1
Printed-Circuit-Board (PCB) technology is attractive for power electronic systems as it offers a low manufacturing cost for mass production. Integration... 
Heating systems | Magnetic cores | Integrated circuit interconnections | Packaging | Manufacturing | Copper | Inductors | Electronics | Engineering Sciences | Electric power
Journal Article
EPJ Applied Physics, ISSN 1286-0042, 2014, Volume 66, Issue 2
In this paper, terminal capacitances of a normally-on SiCED-JFET are measured, analyzed and simulated. All these capacitances are measured using an... 
DEVICES | PHYSICS, APPLIED | INVERTER | VJFETS
Journal Article
IEEE Transactions on Components, Packaging and Manufacturing Technology, ISSN 2156-3950, 01/2015, Volume 5, Issue 1, pp. 143 - 150
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 09/2018, Volume 88-90, pp. 636 - 640
An antiparallel PiN diode is present in the structure of the SiC Power MOSFET. For simplicity, increased module current ratings, and cost reasons, it sometimes... 
DEVICES | NANOSCIENCE & NANOTECHNOLOGY | PHYSICS, APPLIED | RELIABILITY | JUNCTION DIODES | ENGINEERING, ELECTRICAL & ELECTRONIC | Engineering Sciences | Electric power
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 09/2013, Volume 53, Issue 9-11, pp. 1617 - 1621
Silver sintering joints and AuGe soldering are promising technologies for high temperature (>200 °C ambient) power electronics packaging. This paper presents... 
NANOSCIENCE & NANOTECHNOLOGY | PHYSICS, APPLIED | PASTE | ENGINEERING, ELECTRICAL & ELECTRONIC | Sintering | Power electronics | Alloys | Silver | Shear tests | Evolution | Soldering | Thermal cycling | Optimization | Aluminum oxide | Engineering Sciences | Electric power
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 07/2014, Volume 29, Issue 7, pp. 3625 - 3636
Journal Article
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