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IEEE Electron Device Letters, ISSN 0741-3106, 02/2006, Volume 27, Issue 2, pp. 84 - 86
The first demonstration of a type-II InP/GaAsSb double heterojunction bipolar transistor (DHBT) with a compositionally graded InGaAsSb to GaAsSb base layer is... 
Bipolar transistors | Breakdown voltage | Cutoff frequency | Double heterojunction bipolar transistors | Thermal conductivity | Heterojunction bipolar transistors (HBTs) | Indium gallium arsenide | Electron emission | Heterojunction bipolar transistors | Current density | Indium phosphide
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 04/2003, Volume 50, Issue 4, pp. 880 - 885
GaAs-based metal-oxide-semiconductor field-effect transistors (MOSFETs) are promising devices for high-speed and high-power applications. One important factor... 
Gold | Germanium alloys | Gold alloys | Power MOSFETs | Contact resistance | Nickel | Ohmic contacts | Gallium compounds | Current density | GaAs MOSFET | Ohmic contact | Taguchi method | ohmic contact | MISFETS | TRANSISTORS | PHYSICS, APPLIED | OXIDE | CHANNEL | INSULATOR | GATE | ENGINEERING, ELECTRICAL & ELECTRONIC | Metal oxide semiconductor field effect transistors | Research | Optimization
Journal Article
IEEE Journal of Quantum Electronics, ISSN 0018-9197, 11/2004, Volume 40, Issue 11, pp. 1607 - 1613
We have successfully fabricated InGaAs edge-coupled photodiodes (EC-PDs) with a light funnel integrated (LIFI) in front of the coupling aperture, called LIFI... 
PIN photodiodes | Apertures | Dark current | Capacitance | Indium gallium arsenide | Optical coupling | Etching | Bonding | Crystallography | Indium phosphide | Analysis | Bandwidth
Journal Article
IEEE Journal of Quantum Electronics, ISSN 0018-9197, 02/1994, Volume 30, Issue 2, pp. 608 - 618
Journal Article
07/2017
The invention discloses a horizontal type semiconductor element with a vertical type bridging structure electrode. The semiconductor element comprises a... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/1993, Volume 40, Issue 8, pp. 1406 - 1416
Journal Article
07/2016
A structure of high electron mobility light emitting transistor (HEMT) comprises a substrate, a HEMT region disposed on the substrate, and a gallium nitride... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, ISSN 2166-2746, 2014, Volume 32, Issue 2
Interference fringes are generally found in the photoluminescence (PL) spectrum of heterostructures with large refractive index differences between layers and... 
NANOSCIENCE & NANOTECHNOLOGY | PHYSICS, APPLIED | FILMS | LUMINESCENCE | SUBSTRATE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2006, Volume 27, Issue 2, pp. 84 - 86
The first demonstration of a type-II InP/GaAsSb double heterojunction bipolar transistor (DHBT) with a compositionally graded InGaAsSb to GaAsSb base layer is... 
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2006, Volume 27, Issue 2, pp. 84 - 86
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 01/2006, Volume 27, Issue 2
The first demonstration of a type-II InP/GaAsSb double heterojunction bipolar transistor (DHBT) with a compositionally graded InGaAsSb to GaAsSb base layer is... 
Collectors | Electric potential | Indium phosphides | Voltage | Breakdown | Molecular beam epitaxy | Heterojunction bipolar transistors | Devices
Journal Article
2016 5th International Symposium on Next-Generation Electronics (ISNE), 05/2016, pp. 1 - 2
The performance of JBS (P, S) structure within threading dislocations-induced (GaN on PSS~108cm-2) traps and in drift-diffusion simulations, including the... 
C-dopant | Schottky diodes | PSS | Voltage measurement | Current measurement | JBS | Pins | Gallium nitride | Junctions | Electric fields | Gallium nitrides | Voltage | Deletion | Electronics | Drift | Arrays | Diodes | Electrical junctions
Conference Proceeding
2015 IEEE 11th International Conference on Power Electronics and Drive Systems, ISSN 2164-5256, 06/2015, Volume 2015-, pp. 589 - 591
The performance of a pin structure diode fabricated on epitaxial layer on a GaN template using re-growth p-type GaN technology by PAMBE. Experimental results... 
Schottky diodes | Voltage measurement | Transmission line measurements | Gallium nitride | Electric fields | Current density | Substrates | Electric potential | Epitaxial layers | Gallium nitrides | Voltage | Electronics | Devices | Diodes
Conference Proceeding
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