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IEEE Transactions on Electron Devices, ISSN 0018-9383, 10/2011, Volume 58, Issue 10, pp. 3246 - 3253
Journal Article
SCIENTIFIC REPORTS, ISSN 2045-2322, 10/2013, Volume 3, Issue 1, p. 2929
Resistive switching (RS) based on the formation and rupture of conductive filament (CF) is promising in novel memory and logic device applications.... 
DRIVEN ION MIGRATION | ELECTROLYTE-BASED RERAM | MECHANISM | STATISTICS | MULTIDISCIPLINARY SCIENCES | RESISTANCE | DEVICES | PARAMETER VARIATION | RESISTIVE-SWITCHING MEMORY | MODEL | CONDUCTIVE FILAMENTS | Conductance | Dissolution | Voltage | Rupture
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2010, Volume 31, Issue 4, pp. 353 - 355
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2010, Volume 96, Issue 5, p. 53503
Resistive-switching memory (RRAM) is attracting a considerable interest for the development of high-density nonvolatile memories. However, several scaling and... 
PHYSICS, APPLIED | random-access storage | TRAPS | OXIDE | circuit reliability | RRAM DEVICES | MECHANISM | SILICON | random noise | COULOMB-BLOCKADE | CONDUCTION | NANOWIRES
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2011, Volume 32, Issue 11, pp. 1570 - 1572
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2009, Volume 56, Issue 2, pp. 193 - 200
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2009, Volume 56, Issue 2, pp. 186 - 192
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 08/2013, Volume 34, Issue 8, pp. 999 - 1001
The set voltage distribution of Pt/HfO 2 /Pt resistive switching memory is shown to fit well a Weibull model with Weibull slope and scale factor increasing... 
set voltage statistics | Resistive random access memory (RRAM) | resistive switching | RANDOM-ACCESS MEMORY | RESISTIVE SWITCHING MEMORIES | DEVICES | MECHANISMS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2009, Volume 56, Issue 8, pp. 1712 - 1720
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2012, Volume 111, Issue 7, pp. 074508 - 074508-19
The resistive random access memory (RRAM), based on the reversible switching between different resistance states, is a promising candidate for next-generation... 
ACCELERATION | VOLTAGE | PHYSICS, APPLIED | OXIDE BREAKDOWN | FILMS | THERMAL DISSOLUTION MODEL | RESISTANCE | BINARY OXIDES | RESET MECHANISM | Breakdown (Electricity) | Measurement | Electrical conductivity | Analysis | Computer storage devices | Electric properties | Electric resistance
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2013, Volume 102, Issue 18, p. 183505
Discrete changes of conductance of the order of G(0) = 2e(2)/h reported during the unipolar reset transitions of Pt/HfO2/Pt structures are interpreted as the... 
PHYSICS, APPLIED | MECHANISMS | FILMS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 2013, Volume 34, Issue 5, pp. 623 - 625
The statistics of the RESET voltage (V-RESET) and the RESET current (I-RESET) of Pt/HfO2/Pt resistive random access memory (RRAM) devices operated under... 
RESET statistics | resistive switching (RS) | resistive random access memory (RRAM) | RESISTIVE SWITCHING MEMORIES | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2016, Volume 37, Issue 6, pp. 721 - 723
This letter studies the intrinsic variability in oxide-based resistive RAM technology, highlighting the presence of a short range (≈40) correlation of... 
Resistance | Analytical models | Correlation | HfO2 | OxRAM | Distributed databases | Variability | Tin | Hafnium compounds | Standards | HfO | correlation | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Journal of the Electron Devices Society, ISSN 2168-6734, 2018, Volume 6, Issue 1, pp. 696 - 702
This paper proposes a novel technique for reducing programming time and energy consumption in resistive random access memory (RRAM) arrays based on ramped... 
Energy consumption | Voltage measurement | Switches | Programming | Time measurement | resistive random access memory (RRAM) | Reliability | programming time | Stress | reliability | MEMORIES | RAMP STRESS | ARCHITECTURE | DEVICES | VOLTAGE STRESS | POWER-LAW | ENGINEERING, ELECTRICAL & ELECTRONIC | Electric potential | Quantiles | Random access memory | Voltage | Hafnium oxide | Arrays | Switching
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2011, Volume 32, Issue 6, pp. 719 - 721
Resistive-switching random access memory (RRAM) devices are attracting increasing interest as a potential candidate for high-density nonvolatile memory... 
Resistance | Current measurement | Random access memory | Switches | MOSFET circuits | Arrays | Crossbar architecture | Electron devices | resistive-switching random access memory (RRAM) | nonvolatile memory | ENGINEERING, ELECTRICAL & ELECTRONIC | Memory devices | Reduction | Stability | Data storage | Instability | Feasibility | Devices
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2010, Volume 96, Issue 5, pp. 053503 - 053503-3
Resistive-switching memory (RRAM) is attracting a considerable interest for the development of high-density nonvolatile memories. However, several scaling and... 
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2016, Volume 37, Issue 6, pp. 721 - 723
This letter studies the intrinsic variability in oxide-based resistive RAM technology, highlighting the presence of a short range (≈40) correlation of... 
Engineering Sciences | Micro and nanotechnologies | Microelectronics
Journal Article
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