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IEEE electron device letters, ISSN 0741-3106, 09/2010, Volume 31, Issue 9, pp. 957 - 959
Temperature | Density measurement | Cutoff frequency | Gallium nitride | MODFETs | high-electron-mobility transistor (HEMT) | Current measurement | millimeter-wave transistors | HEMTs | Current density | Transconductance | Aluminum gallium nitride | AlInN/GaN | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology | Electronics | Applied sciences | Microwave and submillimeter wave devices, electron transfer devices | Transistors | Exact sciences and technology | Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices | State of the art | Semiconductor devices | Gallium nitrides | High electron mobility transistors | Devices | Transport | Channels | Gain | Gates
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Journal of applied physics, ISSN 0021-8979, 11/2020, Volume 128, Issue 18
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Applied physics letters, ISSN 0003-6951, 11/2014, Volume 105, Issue 20, p. 202113
Physical Sciences | Physics | Science & Technology | Physics, Applied | Electronic devices | Semiconductor devices | Ohmic | Gallium nitrides | Contact resistance | Ammonia | Electrical resistivity | Surface preparation | Molecular beam epitaxy | Electron mobility | Silicon | Epitaxial growth | High electron mobility transistors | Electron gas | ELECTRON MOBILITY | MOLECULAR BEAM EPITAXY | AMMONIA | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | ELECTRONIC EQUIPMENT | SILICON | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | DOPED MATERIALS | ELECTRON GAS | GALLIUM NITRIDES | SURFACES
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Freshwater science, ISSN 2161-9549, 09/2020, Volume 39, Issue 3, pp. 485 - 496
Environmental Sciences & Ecology | Ecology | Life Sciences & Biomedicine | Marine & Freshwater Biology | Science & Technology | Enrichment | Ammonium | Tracking | Growth rate | Periphyton | Biomass | Wastewater treatment plants | Receiving waters | Ecological effects | Control | Wastewater discharges | Diatoms | Chlorophyll | Composition | Nuisance | Algae | Cell division | Phosphorus | Rivers | Nitrogen | Wastewater facilities | Wastewater treatment | Chlorophylls | Discharge | Environmental conditions | Ammonium compounds | Marine microorganisms | Algal growth | Nitrification | Energy efficiency
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Semiconductor science and technology, ISSN 0268-1242, 11/2018, Volume 34, Issue 1, p. 15002
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Physical review letters, ISSN 0031-9007, 04/2019, Volume 122, Issue 16, pp. 162301 - 162301
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The Journal of biological chemistry, ISSN 0021-9258, 02/2017, Volume 292, Issue 7, pp. 2557 - 2570
Life Sciences & Biomedicine | Biochemistry & Molecular Biology | Science & Technology | Biological Evolution | Brain - metabolism | Locomotion | Animals | Endothelium, Vascular - metabolism | Neuraminic Acids - metabolism | Mass Spectrometry | Memory Disorders - metabolism | Mice, Transgenic | Mice | Chromatography, High Pressure Liquid | Index Medicus | Editors' Picks | N-glycolylneuraminic acid | myelin-associated glycoprotein | sialic acid | brain | behavior | bacterial toxin | ganglioside | glycobiology
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Journal of applied physics, ISSN 0021-8979, 05/2016, Volume 119, Issue 20, p. 205708
Physical Sciences | Physics | Science & Technology | Physics, Applied | Quantum wells | Optical properties | Epitaxy | Analysis | Research | Structure | Gallium compounds | Temperature dependence | Energy measurement | Photoluminescence | Metalorganic chemical vapor deposition | Carriers | Lattice matching | Time dependence | Windows (intervals) | Decay | Epitaxial growth | Trends | Localization | MEV RANGE | QUANTUM WELLS | PHOTOLUMINESCENCE | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | ALUMINIUM NITRIDES | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | CARRIERS | INDIUM NITRIDES | VAPOR PHASE EPITAXY | WAVE FUNCTIONS | VAPORS | TEMPERATURE DEPENDENCE | THERMAL EQUILIBRIUM | TIME RESOLUTION | OPTICAL PROPERTIES | LINE WIDTHS | GROUND STATES | THICKNESS | GALLIUM NITRIDES
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Journal of applied physics, ISSN 0021-8979, 2008, Volume 103, Issue 9
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Semiconductor science and technology, ISSN 0268-1242, 04/2016, Volume 31, Issue 6, p. 65011
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Fermi-level pinning and intrinsic surface states of Al 1 − x In x N ( 10 1 ¯ 0 ) surfaces
Applied physics letters, ISSN 0003-6951, 01/2017, Volume 110, Issue 2
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Journal of applied physics, ISSN 0021-8979, 12/2013, Volume 114, Issue 23, p. 233102
Physical Sciences | Physics | Science & Technology | Physics, Applied | Monte Carlo method | Nitrides | Usage | Cavity resonators | Research | Optical properties | Computer simulation | Gallium nitrides | Metalorganic chemical vapor deposition | Substrates | Silicon dioxide | Weight | Vapor phase epitaxy | Electron beams | Sapphire | Dependence | Molecular beam epitaxy | Microcavities | Epitaxial growth | Zirconium dioxide | Spectrophotometry | ORGANOMETALLIC COMPOUNDS | SAPPHIRE | DESIGN | EXCITATION | REFLECTIVITY | CAVITIES | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | DEPOSITION | SUBSTRATES | ELECTRON BEAMS | IMPURITIES | SIMULATION | VAPOR PHASE EPITAXY | SPECTROPHOTOMETRY | EVAPORATION | MOLECULAR BEAM EPITAXY | ZIRCONIUM OXIDES | ABSORPTION | SILICA | GALLIUM NITRIDES | SILICON OXIDES
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Journal of paediatrics and child health, ISSN 1034-4810, 12/2020, Volume 56, Issue 12, pp. 1918 - 1923
cannabidiol | anticonvulsant/therapeutic use | drug resistant epilepsy | outcome assessment (health care) | child | Life Sciences & Biomedicine | Pediatrics | Science & Technology | Medical research | Cellular proteins | Care and treatment | Analysis | Epilepsy | Medicine, Experimental | Clinical trials | Seizures (Medicine) | Drug resistance | Medical ethics | Index Medicus | anticonvulsant | Original | therapeutic use
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IEEE electron device letters, ISSN 0741-3106, 04/2010, Volume 31, Issue 4, pp. 293 - 295
High-electron-mobility transistor (HEMT) | Millimeter-wave transistors | AlInN/GaN | Electronics | Applied sciences | Microwave and submillimeter wave devices, electron transfer devices | Transistors | Exact sciences and technology | Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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The FASEB journal, ISSN 0892-6638, 04/2020, Volume 34, Issue S1, pp. 1 - 1
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