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Journal of Crystal Growth, ISSN 0022-0248, 04/2018, Volume 487, pp. 23 - 27
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2017, Volume 111, Issue 9, p. 92904
The effect of fluorine doping on the switching stability of Ta2O5 resistive random access memory devices is investigated. It shows that the dopant serves to... 
RANDOM-ACCESS MEMORY | PHYSICS, APPLIED | RRAM | MECHANISM | RERAM
Journal Article
SURFACE & COATINGS TECHNOLOGY, ISSN 0257-8972, 04/2016, Volume 291, pp. 258 - 263
Conventional atomic layer deposition (AID) is a thermo-chemical process that is now used extensively in the manufacture of ultrathin films. In addition to... 
ROOM-TEMPERATURE | PHYSICS, APPLIED | Photochemical | LASER | UV-assisted | Area selective deposition | Atomic layer etching | Atomic layer deposition | OXIDE THIN-FILMS | GROWTH | ALD | ALE | MATERIALS SCIENCE, COATINGS & FILMS
Journal Article
AIP Advances, ISSN 2158-3226, 06/2018, Volume 8, Issue 6, pp. 65011 - 065011-7
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 07/2019, Volume 126, Issue 3, p. 34102
The current research investigates the potential advantages of replacing Al2O3 with (Ta2O5)0.12(Al2O3)0.88 as a higher dielectric constant (κ) gate dielectric... 
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2016, Volume 109, Issue 22
We present physical and electrical characterization of niobium-doped zinc oxide (NbZnO) for thin film transistor (TFT) applications. The NbZnO films were... 
Thin films | Zinc oxides | Photovoltaic cells | Electrical properties | Semiconductor devices | Atomic layer deposition | Photoluminescence | X-ray diffraction | Zinc oxide | Percolation | Thin film transistors | Niobium
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 06/2015, Volume 117, Issue 21
A comprehensive study of atomic-layer deposited thulium oxide (Tm2O3) on germanium has been conducted using x-ray photoelectron spectroscopy (XPS), vacuum... 
Electron diffraction | Valence band | Ellipsometry | Thulium | Thickness | Energy gap | Transmission electron microscopy | Energy transmission | Spectrum analysis | Germanium | Stacks | X ray photoelectron spectroscopy | Oxidation | X ray spectra | Germanium oxides | Electron energy | Electron energy loss spectroscopy | Electrons
Journal Article
Surface & Coatings Technology, ISSN 0257-8972, 04/2016, Volume 291, pp. 258 - 263
Conventional atomic layer deposition (ALD) is a thermo-chemical process that is now used extensively in the manufacture of ultrathin films. In addition to... 
Atomic layer etching | Atomic layer deposition | Photochemical | UV-assisted | ALD | ALE | Area selective deposition | ROOM-TEMPERATURE | PHYSICS, APPLIED | LASER | OXIDE THIN-FILMS | O-2 | GROWTH | Atomic-layer etchihg | MATERIALS SCIENCE, COATINGS & FILMS | Thin films | Dielectric films | Beams (radiation) | Heating | Etching | Ultraviolet | Deposition | Exploitation
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 03/2018, Volume 51, Issue 16, p. 163001
Gallium nitride 9GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based... 
GaN-on-Si | power circuits | GaN | PHYSICS, APPLIED | FIELD | MODE | GATE | BREAKDOWN VOLTAGE | TRANSISTORS | ALGAN/GAN HEMTS | SUBSTRATE | MIS | THRESHOLD VOLTAGE
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2014, Volume 105, Issue 20
Thin film transistors (TFTs) have been fabricated using magnesium zinc oxide (MgZnO) layers deposited by atomic layer deposition at 200 °C. The composition of... 
Thin films | Zinc oxides | Photovoltaic cells | Semiconductor devices | Atomic layer deposition | Magnesium oxide | Photoluminescence | Zinc oxide | Threshold voltage | Thin film transistors | Transistors | Silicon dioxide
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2016, Volume 108, Issue 7
We report the modification and control of threshold voltage in enhancement and depletion mode AlGaN/GaN metal-insulator-semiconductor heterostructure field... 
Semiconductor devices | Fluorine | Field effect transistors | Gallium nitrides | Doping | Power transistors | Insulators | Threshold voltage | Aluminum gallium nitrides | Transistors | Heterostructures
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 03/2014, Volume 115, Issue 11, p. 114102
Journal Article
IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, 07/2011, Volume 17, Issue 4, pp. 878 - 888
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 03/2014, Volume 115, Issue 11
A study into the optimal deposition temperature for ultra-thin La{sub 2}O{sub 3}/Ge and Y{sub 2}O{sub 3}/Ge gate stacks has been conducted in this paper with... 
LANTHANUM OXIDES | ANNEALING | THIN FILMS | X-RAY DIFFRACTION | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | COMPARATIVE EVALUATIONS | LEAKAGE CURRENT | COMPUTERIZED SIMULATION | LAYERS | YTTRIUM OXIDES | TEMPERATURE DEPENDENCE | INTERFACES | X-RAY PHOTOELECTRON SPECTROSCOPY | ELLIPSOMETRY | GERMANIUM OXIDES | FAR ULTRAVIOLET RADIATION
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 12/2019, Volume 528, p. 125254
Journal Article
IOP Conference Series: Materials Science and Engineering, ISSN 1757-8981, 05/2017, Volume 201, p. 12029
Journal Article
JOURNAL OF PHYSICS D-APPLIED PHYSICS, ISSN 0022-3727, 11/2019, Volume 52, Issue 47, p. 475101
Low temperature atomic layer deposition was used to deposit alpha-Ga2O3 films, which were subsequently annealed at various temperatures and atmospheres. The... 
THIN-FILMS | PHASES | PHYSICS, APPLIED | atomic layer deposition | ultraviolet | EPITAXIAL-GROWTH | gallium oxide | anneal | GA2O3 FILMS | ALPHA | photodetector | GALLIUM OXIDE-FILMS
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 2006, Volume 100, Issue 2, p. 023514
Epitaxial scandium nitride films (225 nm thick) were grown on silicon by molecular beam epitaxy, using ammonia as a reactive nitrogen source. The main... 
ELECTRONIC-PROPERTIES | PHYSICS, APPLIED | EVOLUTION | THERMAL-EXPANSION | GROWTH | GALLIUM NITRIDE | HARDNESS | MAGNETRON SPUTTER-DEPOSITION | MICROSTRUCTURE | SCN | Poisson's equation | Thin films, Multilayered | Diffraction | Analysis | Scandium | X-rays | Elasticity | Structure | Electric properties
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2017, Volume 110, Issue 10, p. 102902
The role of nitrogen doping on the stability and memory window of resistive state switching in N-doped Ta2O5 deposited by atomic layer deposition is... 
PHYSICS, APPLIED | OXIDES | MEMORY | CHANNEL | RERAM
Journal Article
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