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Scientific Reports, ISSN 2045-2322, 02/2016, Volume 6, Issue 1, p. 20814
Inkjet printing offers an attractive method for the deposition of metal interconnects in electronic systems and enables a low-cost, environmentally friendly... 
ELECTRODES | ROOM-TEMPERATURE | NANOPARTICLES | DEPOSITION | MULTIDISCIPLINARY SCIENCES | Nanoparticles | Printing | Silver | Electrical conductivity | Films | Temperature effects | Glass substrates
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 03/2018, Volume 51, Issue 16, p. 163001
Gallium nitride 9GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based... 
GaN-on-Si | power circuits | GaN | PHYSICS, APPLIED | FIELD | MODE | GATE | BREAKDOWN VOLTAGE | TRANSISTORS | ALGAN/GAN HEMTS | SUBSTRATE | MIS | THRESHOLD VOLTAGE
Journal Article
IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, 07/2011, Volume 17, Issue 4, pp. 878 - 888
Journal Article
PLOS NEGLECTED TROPICAL DISEASES, ISSN 1935-2735, 06/2019, Volume 13, Issue 6, pp. e0007421 - e0007421
Journal Article
Optics Letters, ISSN 0146-9592, 01/2007, Volume 32, Issue 2, pp. 190 - 192
Femtosecond, subablation threshold photomodification of poly(methyl methacrylate) (PMMA) at 387 nm is explored to enable fabrication of optical components.... 
ABLATION | WAVE-GUIDES | OPTICS
Journal Article
Applied Surface Science, ISSN 0169-4332, 03/2017, Volume 399, pp. 123 - 131
[Display omitted] •We demonstrate metallic silver growth by direct liquid injection thermal ALD.•A substituted hydrazine is used as a powerful reducing agent... 
Self limiting | Atomic layer deposition | Tertiary butyl hydrazine | Silver thin films | THIN-FILMS | OXIDATION | GOLD | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | TANTALUM | CHEMISTRY, PHYSICAL | NANOPARTICLES | RESONANCE | GROWTH | MATERIALS SCIENCE, COATINGS & FILMS | Thin films | Usage | Dielectric films
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2017, Volume 64, Issue 3, pp. 1225 - 1230
Journal Article
Materials, ISSN 1996-1944, 2015, Volume 8, Issue 12, pp. 8169 - 8182
In this research, the hafnium titanate oxide thin films, TixHf1-xO2, with titanium contents of x = 0, 0.25, 0.9, and 1 were deposited on germanium substrates... 
AFM | Titanium-doped hafnium oxide | XPS | Ge substrate | XRD | HFO2 | HIGH-K MATERIALS | HAFNIUM OXIDE | titanium-doped hafnium oxide | PASSIVATION | DIELECTRICS | MATERIALS SCIENCE, MULTIDISCIPLINARY | ATOMIC LAYER DEPOSITION
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 2019, Volume 58, Issue 5, p. 56505
Power integration is essential for the fully utilization of advanced GaN devices in power conversion applications due to the reduced parasitic inductance, low... 
CIRCUITS | MOSFET | PHYSICS, APPLIED | ALGAN/GAN HEMTS | INTERFACE | PERFORMANCE | Power converters | Inductance | Semiconductor devices | Gallium nitrides | Heterojunctions | Aluminum gallium nitrides | High temperature | Transistors | Energy conversion efficiency | Design optimization
Journal Article
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, ISSN 0268-1242, 03/2019, Volume 34, Issue 3, p. 35032
In this work, the role of HCl treatments on InSb surfaces and InSb-Al2O3 dielectric interfaces is characterised. X-ray photoelectron spectroscopy measurements... 
PHYSICS, CONDENSED MATTER | MOSCAP | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOSCAPS | Al2O3 | LAYERS | ENGINEERING, ELECTRICAL & ELECTRONIC | HCl | III-V | INTERFACE | InSb | RAY PHOTOELECTRON-SPECTROSCOPY | ALD
Journal Article
Inorganic Chemistry, ISSN 0020-1669, 11/2011, Volume 50, Issue 22, pp. 11644 - 11652
Thin films of ceria (CeO2) have many applications, and their synthesis by liquid-injection MOCVD (metal–organic chemical vapor deposition) or ALD (atomic layer... 
THIN-FILMS | VOLATILE | HFO2 | LOW-TEMPERATURE GROWTH | IMPLEMENTATION | CRYSTAL-STRUCTURES | ALD | MOCVD | CHEMISTRY, INORGANIC & NUCLEAR
Journal Article