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Applied Physics Letters, ISSN 0003-6951, 07/2017, Volume 111, Issue 3
This letter studies the effect of the negative-set on the resistive switching performances of CMOS-compatible Ni/SiN x /p++-Si resistive memory devices by... 
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2017, Volume 111, Issue 3
This letter studies the effect of the negative-set on the resistive switching performances of CMOS-compatible Ni/SiNx/p++-Si resistive memory devices by simply... 
Pulse amplitude | CMOS | Memory devices | Conduction model | Silicon | Endurance | Tuning | Switching
Journal Article
ACS Applied Materials & Interfaces, ISSN 1944-8244, 11/2017, Volume 9, Issue 46, pp. 40420 - 40427
In this paper, we present a synapse function using analog resistive-switching behaviors in a SiN x -based memristor with a complementary... 
Research | analog resistive switching | synapse | silicon nitride | spike-timing-dependent plasticity | memristor | THIN-FILMS | INSULATOR | MATERIALS SCIENCE, MULTIDISCIPLINARY | BARRIER | NANOSCIENCE & NANOTECHNOLOGY | RRAM | RESISTIVE SWITCHING MEMORY | OXYGEN | RANDOM-ACCESS MEMORY | FORMING-FREE | LAYER
Journal Article
ECS Transactions, ISSN 1938-6737, 2018, Volume 85, Issue 1, pp. 11 - 19
Conference Proceeding
Physical Chemistry Chemical Physics, ISSN 1463-9076, 2017, Volume 19, Issue 29, pp. 18988 - 18995
Here we demonstrate low-power resistive switching in a Ni/SiN /SiN /p -Si device by proposing a double-layered structure (SiN /SiN ), where the two SiN layers... 
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2016, Volume 109, Issue 22, p. 223501
Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient. In such systems,... 
CIRCUITS | PHYSICS, APPLIED | FILMS | MEMORY | SWITCHING MECHANISM | PROTON-EXCHANGE REACTIONS | THERMAL-PROPERTIES | HFOX | SILICON
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2016, Volume 109, Issue 22
Nanoscale metal oxide memristors have potential in the development of brain-inspired computing systems that are scalable and efficient. In such systems,... 
Metal oxides | Resistance | Memory devices | Brain | Computation | Neural networks | Memristors | Switching theory | Cerium oxides | Synapses
Journal Article
Progress in Solid State Chemistry, ISSN 0079-6786, 09/2016, Volume 44, Issue 3, pp. 75 - 85
In this work, the AC admittance and conductance of non-polar SiO -based resistive switching memory devices is measured as a function of temperature to... 
Silicon oxide | RRAM | Non-polar | Proton exchange | Resistive switching
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2019, Volume 115, Issue 21, p. 212102
We observe how temperature and compliance currents (CCs) affect the coexistence of nonvolatile resistive memory switching (NVMS) and volatile threshold... 
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2019, Volume 115, Issue 21
We observe how temperature and compliance currents (CCs) affect the coexistence of nonvolatile resistive memory switching (NVMS) and volatile threshold... 
Metal oxides | Temperature effects | Silicon | Copper | Synapses | Switching
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 07/2017, Volume 38, Issue 7, pp. 871 - 874
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2012, Volume 101, Issue 5
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2017, Volume 111, Issue 3, p. 33509
This letter studies the effect of the negative-set on the resistive switching performances of CMOS-compatible Ni/SiNx/p(++)-Si resistive memory devices by... 
RANDOM-ACCESS MEMORY | PHYSICS, APPLIED | OXIDE | PROTON-EXCHANGE REACTIONS | BEHAVIOR | IMPLEMENTATION | POWER | MECHANISMS | RRAM | ARRAYS
Journal Article
RSC Advances, 2017, Volume 7, Issue 29, pp. 17882 - 17888
Journal Article
Nano Letters, ISSN 1530-6984, 02/2014, Volume 14, Issue 2, pp. 813 - 818
We report on a highly compact, one diode–one resistor (1D–1R) nanopillar device architecture for SiO x -based ReRAM fabricated using nanosphere lithography... 
SiO | 1D-1R | ReRAM | Nanosphere Lithography | nanopillar
Journal Article
Chinese Journal of Geophysics (Acta Geophysica Sinica), ISSN 0001-5733, 02/2013, Volume 56, Issue 2, pp. 608 - 615
By integrating Gassmann equations with the dry rock frame model, which is called as DEM analytical model, derived from the differential effective medium... 
Dry-rock frame model | Gassmann equations | Shear-velocity prediction | Reservoir pore structure | Pore aspect ratio | Mathematical analysis | Inversions | Rocks | Reservoirs | Mathematical models | Porosity | Aspect ratio | Estimates
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2012, Volume 100, Issue 8, pp. 083502 - 083502-3
The resistive switching between high impedance ("off" state) and low impedance ("on" state) is demonstrated on e-beam evaporated SiO x /Si resistive random... 
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2016, Volume 108, Issue 3
Self-compliance characteristics and reliability optimization are investigated in intrinsic unipolar silicon oxide (SiOx)-based resistive switching (RS) memory... 
Electric potential | Compliance | Silicon oxides | Circuit reliability | Immunity | Switching
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2016, Volume 108, Issue 3
Self-compliance characteristics and reliability optimization are investigated in intrinsic unipolar silicon oxide (SiO{sub x})-based resistive switching (RS)... 
DISTURBANCES | ELECTRIC POTENTIAL | FILAMENTS | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | OPTIMIZATION | RELIABILITY | PROTONS | SILICON OXIDES
Journal Article
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