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Nature Biotechnology, ISSN 1087-0156, 02/2013, Volume 31, Issue 2, pp. 126 - 134
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2014, Volume 35, Issue 6, pp. 630 - 632
In this letter, we report the oxygen accumulation effect and its influence on resistive switching for gadolinium-doped silicon dioxide (Gd:SiO 2 ) resistance... 
Electrodes | Resistance | Indium tin oxide | Schottky emission | Switches | Tin | Educational institutions | Silicon | RRAM | Oxygen accumulation | indium tin oxide | RESISTIVE SWITCHING MEMORIES | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Pineal Research, ISSN 0742-3098, 01/2020, Volume 68, Issue 1, pp. e12615 - n/a
Abnormal proliferation and motility of retinal pigment epithelial cells leads to proliferative vitreoretinopathy (PVR). Melatonin is a known effective... 
c‐Jun | proliferation | cathepsin S | Sp1 | mTOR | retinal pigment epithelial cells | motility | AKT | epidermal growth factor | melatonin
Journal Article
Molecular Vision, ISSN 1090-0535, 12/2017, Volume 23, pp. 900 - 910
Purpose: Proliferative vitreoretinopathy (PVR) can result in abnormal migration of RPE cells. Fisetin is a naturally occurring compound that has been reported... 
MATRIX METALLOPROTEINASES | APOPTOSIS | PIGMENT EPITHELIAL-CELLS | SIGNALING PATHWAY | BIOCHEMISTRY & MOLECULAR BIOLOGY | RETINAL-DETACHMENT | MATRIX-METALLOPROTEINASE-9 | OPHTHALMOLOGY | PROLIFERATIVE VITREORETINOPATHY | MESENCHYMAL TRANSITION | FACTOR RECEPTOR | CANCER
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2014, Volume 35, Issue 2, pp. 217 - 219
In this letter, the special role of hydrogen ions in hafnium doped silicon oxide resistive random access memory (RRAM) is presented. In addition to the more... 
Resistance | Hydrogen | tri-resistive states | Switches | Educational institutions | Ions | Silicon | RRAM | Plasmas | resistive switching | hydrogen | ORIGIN | HOPPING CONDUCTION | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2014, Volume 35, Issue 5, pp. 530 - 532
In this letter, dual ion effect induced reset process of lithium silicate resistance random access memory (RRAM) devices is studied and discussed. Unlike the... 
Resistance | Electrodes | I-V | dual ion effect | Switches | Tin | Lithium | Ions | Silicon | RRAM | lithium silicate | ORIGIN | HOPPING CONDUCTION | RESISTIVE SWITCHING MEMORIES | DEVICES | CO2 FLUID TREATMENT | OXIDE RRAM | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2014, Volume 35, Issue 6, pp. 633 - 635
Photosensitivity to ultraviolet (UV) light for zinc oxide (ZnO) resistance random access memory (RRAM) with transparent electrode was investigated and... 
Resistance | ultra-violet light | current conduction mechanism | Lighting | Random access memory | Switches | Zinc oxide | Ions | ZnO | RRAM | Electron devices | IMPROVEMENT | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2014, Volume 104, Issue 24, p. 243508
A low-temperature ultra-violet (UV) light enhanced supercritical CO2 (SCCO2) fluid treatment is employed to improve the performance of In-Ga-Zn-O (IGZO) thin... 
RANDOM-ACCESS MEMORY | PHYSICS, APPLIED | RRAM | TFT | PASSIVATION | Grain boundaries | Thin films | Organic chemistry | Indium gallium zinc oxide | Semiconductor devices | Light | Performance enhancement | Thin film transistors | Transistors
Journal Article
Nanoscale Research Letters, ISSN 1931-7573, 12/2013, Volume 8, Issue 1, pp. 1 - 5
To improve the operation current lowing of the Zr:SiO2 RRAM devices, a space electric field concentrated effect established by the porous SiO2 buffer layer was... 
Porous SiO 2 | Nanotechnology and Microengineering | Space charge limited current | Material Science | Molecular Medicine | RRAM | Nanochemistry | Nanoscale Science and Technology | Nanotechnology | Porous SiO | ORIGIN | PHYSICS, APPLIED | Porous SiO2 | HOPPING CONDUCTION | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | NANOCRYSTALS | Zr | IMPROVEMENT | NANOSCIENCE & NANOTECHNOLOGY
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 12/2014, Volume 35, Issue 12, pp. 1227 - 1229
In this letter, we investigated oxygen ion concentration gradient method, which can manipulate the set voltage of zinc oxide-doped silicon oxide resistance... 
Resistance | Nonvolatile memory | Indium tin oxide | Random access memory | concentration gradient | Zinc oxide | RRAM | Voltage control | set voltage | zinc oxide | OXIDE | ELECTRODE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
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