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Journal of Applied Physics, ISSN 0021-8979, 10/2015, Volume 118, Issue 16, p. 165704
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 10/2015, Volume 118, Issue 16
Experiments and calculations performed in previous studies indicate that compressive strain will increase (100)-strained GeSn's need for Sn to realize a direct... 
First principles | Deformation | Lattice parameters | Crossovers | Energy gap | Tensile strain | Compressive properties | Valleys | Comparative studies | Tin | Germanium | Elastic properties | Buffers
Journal Article
Optics Express, ISSN 1094-4087, 03/2011, Volume 19, Issue 7, pp. 6400 - 6405
Using a 820 nm-thick high-quality Ge0.97Sn0.03 alloy film grown on Si(001) by molecular beam epitaxy, GeSn p-i-n photodectectors have been fabricated. The... 
Germanium - chemistry | Photometry - instrumentation | Semiconductors | Tin - chemistry | Light | Equipment Design | Telecommunications - instrumentation | Equipment Failure Analysis
Journal Article
Electrochimica Acta, ISSN 0013-4686, 08/2016, Volume 208, pp. 174 - 179
This study presents a high-performance lithium-ion battery with nano-porous Si anode etched from polycrystalline Si particles. Nano-pores formed in micro-sized... 
nano-porous Si | lithium-ion battery | polyacrylonitrile | ELECTROCHEMISTRY | SHELL | CARBON | EXPANSION | ELECTRODES | COPPER | HIGH-CAPACITY | COMPOSITE | LIFE | Silicon | Batteries | Electrochemistry | Electric properties | Lithium-ion batteries | Electrochemical analysis | Particulate composites | Charge | Nanostructure | Anodes | Rechargeable batteries
Journal Article
Physical Chemistry Chemical Physics, ISSN 1463-9076, 9/2018, Volume 2, Issue 36, pp. 23344 - 23351
Recently, two-dimensional germanium-tin (2D-GeSn) alloys have attracted considerable attention because they have been predicted to possess a direct bandgap,... 
ELECTRONIC-PROPERTIES | PLATFORMS | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | GRAPHENE | CHEMISTRY, PHYSICAL | GERMANANE | PERFORMANCE ENHANCEMENT | First principles | Strain analysis | Compressive properties | Tin | Density functional theory | Alloying | Two dimensional analysis | Tuning
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2018, Volume 65, Issue 11, pp. 4971 - 4974
A highly doped n-type GeSn layer with a doping concentration of approximately [Formula Omitted] c−3 was grown successfully by the sputtering epitaxy method.... 
Contact resistance | Epitaxial growth | Ohmic | Current voltage characteristics | Doping
Journal Article
ISSN 1463-9076, 10/2017, Volume 19, Issue 39, pp. 2731 - 2737
N-Doping is an effective approach for improving the lighting efficiency of GeSn alloys. As each doping element has an atomic radius and electronegativity value... 
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2016, Volume 37, Issue 6, pp. 701 - 704
Ultrathin GeSn channels were epitaxially grown on Si(111) and (001) substrates using solid source molecular beam epitaxy. Well-behaved GeSn quantum well (QW)... 
Tunneling FET | MOSFET | TFETs | Subthreshold Swing | Metals | Logic gates | Tunneling | Silicon | Substrates | Germanium-Tin (GeSn) | subthreshold swing | Germanium-tin (GeSn) | tunneling FET | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 04/2017, Volume 701, p. 816
A new Si-based material GePb which has been predicted to possess a direct-bandgap attracts much attention in the field of fabricating Si-based light source... 
Band structure | Compressive properties | Band structure of solids | Alloying effects | Lighting | Illumination | Silicon | Compressive strength | Computing time | Buffers | Chemical compounds | Strain
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 05/2019, Volume 785, pp. 228 - 231
Journal Article
Journal of Semiconductors, ISSN 1674-4926, 02/2019, Volume 40, Issue 2, p. 20301
Journal Article
Journal of Materials Science: Materials in Electronics, ISSN 0957-4522, 06/2019, Volume 30, Issue 11, pp. 10117 - 10127
We report selective oxygen detection by Ag2S nanoparticles gas and humidity sensor at low temperatures with high sensitivity. The Ag2S nanoparticles with... 
Relative humidity | Oxygen | Stability | Ethanol | Recyclability | Liquefied petroleum gas | Recovery time | Nanoparticles | Recovering | Humidity | Butanol | Sensors | Gas sensors
Journal Article
Journal of Lightwave Technology, ISSN 0733-8724, 12/2017, Volume 35, Issue 24, pp. 5306 - 5310
High-performance normal-incidence p-i-n Ge photodetectors for 1550 and 1310 nm were grown by selective epitaxial growth on SOI substrate with in situ thermal... 
Optical fibers | optical interconnections | Measurement by laser beam | Bandwidth | Dark current | Germanium | integrated optoelectronics | Photodetectors | photodetectors | REDUCTION | PHOTODIODES | I-N-DIODES | OPTICS | TELECOMMUNICATIONS | DISLOCATION DENSITY | ENGINEERING, ELECTRICAL & ELECTRONIC | Bulk density | Leakage current | Epitaxial growth | Bias | Substrates | Photometers
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2018, Volume 65, Issue 11, pp. 4971 - 4974
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 11/2013, Volume 114, Issue 17, p. 173702
The electrical properties of vertically upstanding p-type silicon nanowires arrays in the ambience of NH3 are studied. It is found that, the introducing of... 
DENSITY | POROUS SILICON | PHYSICS, APPLIED | SEMICONDUCTOR | SILICON NANOWIRES | SURFACE | SENSOR | FIELD-EFFECT TRANSISTORS | Silicon compounds | Research | Semiconductors | Electric properties | Ammonia | Electrical properties | Electrical resistivity | Electronics | Silicon | Nanowires | Ambience | Current carriers | Nanocomposites | Nanomaterials | Arrays
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2018, Volume 65, Issue 11, pp. 4971 - 4974
A highly doped n-type GeSn layer with a doping concentration of approximately \textsf {5} \times \textsf... 
Annealing | Fermi-level depinning | Contact resistivity | Doping | GeSn | Ni stanogermanide | Contact resistance | heavy doping | Nickel | Ohmic contacts | Sputtering
Journal Article
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