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Materials Science & Engineering B, ISSN 0921-5107, 03/2015, Volume 193, Issue C, pp. 13 - 19
Mg-doped In Ga N ( = 0.025, 0.05, 0.075, and 0.1) films have been deposited on Si (1 0 0) substrates by RF reactive sputtering. Mg-In Ga N films remained -type... 
p–n diode | Barrier height | Mg-InxGa1−xN films | Cheung's and Nodre methods | Mg-In | N films p-n diode Barrier height Cheung's and Nodre methods | LIGHT-EMITTING-DIODES | PHYSICS, CONDENSED MATTER | VOLTAGE | PHOTOLUMINESCENCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | p-n diode | Mg-InxGa1-xN films
Journal Article
Journal of Physical Chemistry B, ISSN 1520-6106, 03/2016, Volume 120, Issue 8, pp. 1928 - 1939
Journal Article
Physical Review. A, ISSN 1050-2947, 01/2010, Volume 81, Issue 1
Tensor rank refers to the number of product states needed to express a given multipartite quantum state. Its nonadditivity as an entanglement measure has... 
TENSORS | TUNGSTEN IONS | FREQUENCY RANGE | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | CHARGED PARTICLES | IONS | QUANTUM ENTANGLEMENT | GHZ RANGE | TRANSFORMATIONS
Journal Article
中国物理快报:英文版, ISSN 0256-307X, 2015, Volume 32, Issue 7, pp. 156 - 159
We report an AlGaN channel high electron mobility transistor (HEMT) on a sapphire substrate with a 1000-nm A1xGa1-xN (x = 0-0.18)/GaN composite buffer layer,... 
高电子迁移率晶体管 | N通道 | 缓冲层 | HEMT | 反向漏电流 | 晶体质量 | 蓝宝石衬底 | HEMTS | DISLOCATIONS | PHYSICS, MULTIDISCIPLINARY | GAN | REVERSE-BIAS LEAKAGE
Journal Article
Nanoscale Research Letters, ISSN 1931-7573, 2012, Volume 7, Issue 1, pp. 1 - 6
High Al content Al (x) Ga1-x N/GaN multiple quantum well (MQW) films with different interlayers were grown by metal organic chemical vapor deposition. These... 
Intersubband | TEM | Quantum wells | Interface | DISLOCATIONS | PHYSICS, APPLIED | WAVELENGTH RANGE | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | MU-M | MOCVD | ALN/GAN | SUPERLATTICES | GAN | GAN/ALGAN | STRAIN RELAXATION | TRANSITIONS
Journal Article
Electrochemistry Communications, ISSN 1388-2481, 01/2007, Volume 9, Issue 1, pp. 1 - 5
A new type of electrochemical storage energy batteries of M/X (M{double bond, long}Al, Mg; X{double bond, long}Br, I, n = 3, 2) were found. They can operate... 
Anion transport mechanism | Aluminium | Batteries | Magnesium
Journal Article
Chinese Physics B, ISSN 1674-1056, 05/2011, Volume 20, Issue 5, p. 057305
The temperature dependence of carrier transport properties of AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures has been investigated. It is shown... 
PHYSICS, MULTIDISCIPLINARY | Hall mobility | parallel conductivity | temperature dependence | MAGNETIC-FIELD | ALGAN/GAN HETEROSTRUCTURES | ELECTRON-TRANSPORT
Journal Article
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 05/2007, Volume 101, Issue 10, p. 103521
InGaN ternary alloys have been studied with photoluminescence, photoluminescence excitation spectroscopy, scanning electron microscopy, and cathodoluminescence... 
EPITAXY | PHYSICS, APPLIED | LUMINESCENCE | INGAN EPILAYERS | DIODES | EMISSION | BAND-GAP | DEPENDENCE
Journal Article
Optics Communications, ISSN 0030-4018, 05/2005, Volume 249, Issue 1-3, pp. 217 - 223
Numerical simulation based on first-principles calculation is applied to study the structural characteristics and band-energy properties of wurtzite In Ga N.... 
Bowing parameter | Energy band structure | III-V semiconductors
Journal Article
Chinese Physics Letters, ISSN 0256-307X, 09/2013, Volume 30, Issue 9, p. 98102
By using x-ray diffraction analysis, we investigate the major structural parameters such as strain state and crystal quality of non-polar a-plane InxGa1-xN... 
THIN-FILMS | OVERGROWTH | CONSTANTS | PHYSICS, MULTIDISCIPLINARY | GAN | GROWTH | NANOSTRUCTURES
Journal Article
Optics Communications, ISSN 0030-4018, 05/2005, Volume 249, Issue 1-3, pp. 217 - 223
Numerical simulation based on first-principles calculation is applied to study the structural characteristics and band-energy properties of wurtzite In Ga N.... 
III–V semiconductors | Energy band structure | Bowing parameter | IN(X)GA1-XN | ALN | TOTAL-ENERGY CALCULATIONS | energy band structure | DEPENDENCE | HEXAGONAL INN | PSEUDOPOTENTIALS | OPTICAL BAND-GAP | ALLOYS | bowing parameter | STRUCTURAL-PROPERTIES | ABSORPTION | OPTICS | III-V semiconductors
Journal Article
Key Engineering Materials, ISSN 1013-9826, 2012, Volume 512-515, pp. 890 - 893
Conference Proceeding
Microwave and Optical Technology Letters, ISSN 0895-2477, 06/2011, Volume 53, Issue 6, pp. 1206 - 1209
A novel structure A x Ga 1‐x N/AlN/Al y Ga 1‐y N/GaN HEMT with composited‐layer and unintentionally doping barrier was designed for high linearity. The effect... 
doping | linearity | composited‐layer | AlGaN/GaN | TRANSISTOR | DESIGN | composited-layer | GAN-HEMT | CHANNEL AL0.3GA0.7N/AL0.05GA0.95N/GAN HEMTS | OPTICS | HIGH-LINEARITY | ENGINEERING, ELECTRICAL & ELECTRONIC | Semiconductor devices | Semiconductors | Gallium nitrides | Barriers | Linearity | Doping | High electron mobility transistors | Aluminum nitride
Journal Article
IEEE/ACM Transactions on Networking, ISSN 1063-6692, 06/2007, Volume 15, Issue 3, pp. 657 - 668
We consider the fundamental delay bounds for scheduling packets In an N times N packet switch operating under the crossbar constraint. Algorithms that make... 
Journal Article
Chinese Physics Letters, ISSN 0256-307X, 07/2011, Volume 28, Issue 7, p. 78201
Structural properties of InxGa1-xN/GaN multi-quantum wells (MQWs) grown on sapphire by metal organic chemical vapor deposition are investigated by synchrotron... 
FILMS | EPILAYERS | PHYSICS, MULTIDISCIPLINARY | STRAIN
Journal Article
CHINESE PHYSICS LETTERS, ISSN 0256-307X, 12/2010, Volume 27, Issue 12, p. 127304
Mg-doped AlxGa1-xN epilayers were grown on AlN/sapphire templates by metal organic chemical vapor deposition (MOCVD) using an indium-assisted growth method. At... 
ALN | PHOTODETECTORS | PHYSICS, MULTIDISCIPLINARY | SUPERLATTICES | N-TYPE DIAMOND | FABRICATION | P-TYPE GAN | CODOPING METHOD | ALGAN | PREDICTION | ACCEPTOR
Journal Article
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 06/2007, Volume 101, Issue 11, p. 113710
We studied the low-temperature magnetotransport properties of AlxGa1-xN/AlN/GaN heterostructures with a two-dimensional electron gas (2DEG). Structures with... 
DENSITY | VAPOR-PHASE EPITAXY | TRANSPORT | PHYSICS, APPLIED | THREADING DISLOCATIONS | REDUCTION | MOBILITY | MOLECULAR-BEAM EPITAXY | ALGAN/GAN HETEROSTRUCTURES | LAYERS
Journal Article
Chemical Physics Letters, ISSN 0009-2614, 2006, Volume 418, Issue 1, pp. 272 - 280
A series of [XN ] (X = O, S, Se, Te) compounds have been examined with ab initio and density functional theory (DFT) methods. The five-membered nitrogen ring... 
Journal Article
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