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physics (13) 13
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1. Full Text Improved measurement of muon antineutrino disappearance in MINOS
by Adamson, P and Ayres, D.S and Backhouse, C and Barr, G and Blake, A and Bock, G.J and Bogert, D and Cao, S.V and Childress, S and Coelho, J.A.B and Corwin, L and Cronin-Hennessy, D and De Jong, J.K and Devenish, N.E and Diwan, M.V and Escobar, C.O and Evans, J.J and Falk, E and Feldman, G.J and Frohne, M.V and Gallagher, H.R and Gomes, R.A and Goodman, M.C and Gouffon, P and Gran, R and Grzelak, K and Habig, A and Hartnell, J and Hatcher, R and Himmel, A and Holin, A and Huang, X and Hylen, J and Isvan, Z and Jensen, D and Kafka, T and Kasahara, S.M.S and Koizumi, G and Kopp, S and Kordosky, M and Kreymer, A and Lang, K and Ling, J and Loiacono, L and Lucas, P and Mann, W.A and Marshak, M.L and Mathis, M and Mayer, N and Mehdiyev, R and Meier, J.R and Messier, M.D and Michael, D.G and Miller, W.H and Mishra, S.R and Mitchell, J and Moore, C.D and Mualem, L and Mufson, S and Musser, J and Naples, D and Nelson, J.K and Newman, H.B and Nowak, J.A and Oliver, W.P and Pahlka, R.B and Paley, J and Patterson, R.B and Pawloski, G and Plunkett, R.K and Qiu, X and Radovic, A and Ratchford, J and Rebel, B and Rosenfeld, C and Rubin, H.A and Sanchez, M.C and Schneps, J and Schreckenberger, A and Schreiner, P and Sharma, R and Sousa, A and Strait, M and Tagg, N and Talaga, R.L and Thomas, J and Thomson, M.A and Tinti, G and Torretta, D and Tzanakos, G and Urheim, J and Vahle, P and Viren, B and Walding, J.J and Weber, A and Webb, R.C and White, C and Whitehead, L and Wojcicki, S.G and Zwaska, R and MINOS Collaboration and The MINOS Collaboration
Physical review letters, ISSN 0031-9007, 05/2012, Volume 108, Issue 19, pp. 191801 - 191801
Physics, Multidisciplinary | Physical Sciences | Physics | Science & Technology | Physics - High Energy Physics - Experiment
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2. Full Text Investigation of thermal sensitivity and radiation resistance of SiO x〈Ti〉 metal-dielectric films
by Shepeliavyi, P.E and Indutnyi, I.Z and Dan'Ko, V.A and Neimash, V.B and Povarchuk, V.Yu
Infrared physics & technology, ISSN 1350-4495, 03/2014, Volume 63, pp. 189 - 192
Radiation resistance | Bolometer | Metal-dielectric thermosensitive films
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3. Full Text Investigation of thermal sensitivity and radiation resistance of SiO.sub.x metal-dielectric films
by Shepeliavyi, P.E and Indutnyi, I.Z and Dan'Ko, V.A and Neimash, V.B and Povarchuk, V.Yu
Infrared physics & technology, ISSN 1350-4495, 03/2014, Volume 63, p. 189
Thin films | Nuclear radiation | Dielectric films | Dielectrics | Investigations
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4. Full Text Investigation of thermal sensitivity and radiation resistance of SiOx〈Ti〉 metal-dielectric films
by Shepeliavyi, P.E and Indutnyi, I.Z and Dan’ko, V.A and Neimash, V.B and Povarchuk, V.Yu
Infrared physics & technology, ISSN 1350-4495, 03/2014, Volume 63, pp. 189 - 192
Bolometer | Radiation resistance | Metal-dielectric thermosensitive films | Physical Sciences | Technology | Instruments & Instrumentation | Optics | Physics | Science & Technology | Physics, Applied
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5. Full Text Visible photoluminescence of selectively etched porous nc-Si-Si[O.sub.x] structures
by Indutnyi, I.Z and Michailovska, E.V and Shepeliavyi, P.E and Dan'ko, V.A
Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, 02/2010, Volume 44, Issue 2, p. 206
Nuclear radiation | Photoluminescence | Nanotechnology
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6. Full Text Photoinduced etching of thin films of chalcogenide glassy semiconductors
by Dan’ko, V A and Indutnyi, I Z and Min’ko, V I and Shepelyavyi, P E and Bereznyova, O V and Lytvyn, O S
Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, 4/2012, Volume 46, Issue 4, pp. 504 - 508
Physics | Magnetism, Magnetic Materials | Physics, general | Physics, Condensed Matter | Physical Sciences | Science & Technology | Thin films | Integrated circuit fabrication | Dielectric films | Semiconductors
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7. Spatial frequency doubling of interference lithographic structure using two-layer chalcogenide photoresist
by Indutnyi, I.Z and Dan'Ko, V.A and Myn'Ko, V.I and Shepeliavyi, P.E and Bereznyova, O.V
Journal of Optoelectronics and Advanced Materials, ISSN 1454-4164, 11/2011, Volume 13, Issue 11-12, pp. 1467 - 1469
Chalcogenide inorganic photoresist | Interference lithography | Spatial frequency doubling | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Optics | Physics | Science & Technology | Physics, Applied
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8. Full Text Kinetics of structural and phase transformations in thin SiOx films in the course of a rapid thermal annealing
by Dan’ko, V A and Indutnyi, I Z and Lysenko, V S and Maidanchuk, I Yu and Min’ko, V I and Nazarov, A N and Tkachenko, A S and Shepelyavyi, P E
Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, 10/2005, Volume 39, Issue 10, pp. 1197 - 1203
Physics | Magnetism, Magnetic Materials | Electromagnetism, Optics and Lasers | Physics, Condensed Matter | Physical Sciences | Science & Technology
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9. Full Text Visible photoluminescence of selectively etched porous nc-Si-Siox structures
by Indutnyi, I Z and Michailovska, E V and Shepeliavyi, P E and Dan’ko, V A
Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, 2/2010, Volume 44, Issue 2, pp. 206 - 210
Physics | Magnetism, Magnetic Materials | Physics, general | Physics, Condensed Matter | Physical Sciences | Science & Technology
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10. Fabrication of submicrometer periodic structures using interference lithography and two-layer chalcogenide photoresist
by Indutnyi, I.Z and Popescu, M and Lorinczi, A and Sava, F and Min'ko, V.I and Shepeliavyi, P.E and Dan'ko, V.A
Journal of Optoelectronics and Advanced Materials, ISSN 1454-4164, 12/2009, Volume 11, Issue 12, pp. 1967 - 1971
Chalcogenide inorganic photoresist | Interference lithography | Physical Sciences | Materials Science | Technology | Materials Science, Multidisciplinary | Optics | Physics | Science & Technology | Physics, Applied
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11. Full Text Interference photolithography with the use of resists on the basis of chalcogenide glassy semiconductors
by Dan’ko, V A and Indutnyi, I Z and Min’ko, V I and Shepelyavyi, P E
Optoelectronics, instrumentation, and data processing, ISSN 8756-6990, 10/2010, Volume 46, Issue 5, pp. 483 - 490
periodic structure | Optics, Optoelectronics, Plasmonics and Optical Devices | interference lithography | immersion | etching | Physics | inorganic chalcogenide photoresist | Semiconductors | Integrated circuit fabrication | Semiconductor industry
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12. Full Text Effect of chemical treatment on photoluminescence spectra of SiO x layers with built-in Si nanocrystals
by Indutnyy, I Z and Maĭdanchuk, I Yu and Min’ko, V I and Shepelyavyĭ, P E and Dan’ko, V A
Semiconductors (Woodbury, N.Y.), ISSN 1063-7826, 10/2007, Volume 41, Issue 10, pp. 1248 - 1254
Physics | Magnetism, Magnetic Materials | Electromagnetism, Optics and Lasers
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13. Visible photoluminescence from annealed porous SiOx films
by Indutnyy, I.Z and Maidanchuk, I.Yu and Min'ko, V.I and Shepeliavyi, P.E and Dan'ko, V.A
Journal of Optoelectronics and Advanced Materials, ISSN 1454-4164, 06/2005, Volume 7, Issue 3, pp. 1231 - 1236
Nanocrystals | Porous silicon oxide | Photoluminescence | Thin film
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14. Full Text Development of Technology for Sensor Chip Production with Increased Sensitivity and Improved Physical and Mechanical Characteristics for Optical Sensors Based on Surface Plasmon Resonance
by Danko, V.A and Indutnyi, I.Z and Ushenin, Yu.V and Lytvyn, P.M and Mynko, V.I and Shepeliavyi, P.Ye and Lykanyuk, M.V and Korchovyi, A.A and Khristosenko, R.V and V.Ye. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Kyiv
Nauka ta innovacìï, ISSN 1815-2066, 11/2017, Volume 13, Issue 6, pp. 25 - 35
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15. Kinetics of structural and phase transformations in thin SiOx films in the course of a rapid thermal annealing
by Dan'ko, V.A and Indutnyii, I.Z and Lysenko, V.S and Maidanchuk, I.Yu and Min'ko, V.I and Nazarov, A.N and Tkachenko, A.S and Shepelyavyii, P.E
Fizika i tehnika poluprovodnikov, ISSN 0015-3222, 2005, Volume 39, Issue 10, pp. 1239 - 1245
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16. Full Text Photodoping in As2S3Ag structures
by Indutnyi, I.Z and Dan'ko, V.A and Kudryavtsev, A.A and Michailovskaya, E.V and Min'ko, V.I
Journal of non-crystalline solids, ISSN 0022-3093, 05/1995, Volume 185, Issue 1-2, pp. 176 - 182
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17. Full Text Production Technology of Holographic Diffraction Gratings Based on Inorganic Vacuum Photoresists
by Dan’ko, V.A and Indutnyi, I.Z and Lykanyuk, M.V and Myn’ko, V.I and Shepeliavyi, P.E
Nauka ta innovacìï, ISSN 1815-2066, 09/2014, Volume 10, Issue 5, pp. 24 - 33
chalcogenide photo resists | spectral devices | diffraction grating
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18. Full Text Optical study of thermally induced phase separation in evaporated SiOx films
by Indutnyy, I Z and Lisovskyy, I P and Mazunov, D O and Shepeliavyi, P E and Rudko, G Yu and Dan'ko, V A and V. Lashkaryov Institute of Semiconductors Physics of National Academy of Sciences of Ukraine
Semiconductor physics, quantum electronics, and optoelectronics, ISSN 1560-8034, 01/2004, Volume 7, Issue 2, pp. 161 - 167
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19. Influence of trap states on the kinetics of luminescence and induced light absorption by Si nanoparticles in a SiO2 matrix at their excitation with femtosecond laser pulses
by Kadan, V.M and Indutnyi, I.Z and Dan'ko, V.A and Shepelyavyi, P.E and Dmitruk, I.M and Korenyuk, P.I and Blonsky, I.V
Ukrainian journal of physics (Kiev), ISSN 2071-0186, 2013, Volume 58, Issue 1, pp. 20 - 25
Trap states | Fluence | Lux-intensive characteristics | Transient absorption | Pump-probe | Telegraph-like signal | Effect of luminescence fatigue | Auger-process | White supercontinuum | CCD-camera
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20. Full Text New constraints on muon-neutrino to electron-neutrino transitions in MINOS
by Adamson, P and Auty, D.J and Backhouse, C and Barr, G and Betancourt, M and Bhattarai, P and Bishai, M and Bock, G.J and Boehnlein, D.J and Cavanaugh, S and Cherdack, D and Childress, S and Choudhary, B.C and Cobb, J.H and Coelho, J.A.B and Cronin-Hennessy, D and Danko, I.Z and De Jong, J.K and Devenish, N.E and Diwan, M.V and Evans, J.J and Feldman, G.J and Gallagher, H.R and Gouffon, P and Graf, N and Gran, R and Grzelak, K and Habig, A and Harris, D and Hartnell, J and Heller, K and Holin, A and Huang, X and Hylen, J and Ilic, J and Irwin, G.M and Isvan, Z and Jaffe, D.E and Jensen, D and Kasahara, S.M.S and Koizumi, G and Kopp, S and Kordosky, M and Krahn, Z and Kreymer, A and Lefeuvre, G and Ling, J and Litchfield, P.J and Litchfield, R.P and Loiacono, L and Lucas, P and Marshak, M.L and Marshall, J.S and Mayer, N and McGowan, A.M and Messier, M.D and Miller, W.H and Mitchell, J and Moore, C.D and Mualem, L and Musser, J and Naples, D and Nelson, J.K and Newman, H.B and Ochoa-Ricoux, J.P and Orchanian, M and Ospanov, R and Paley, J and Para, A and Patterson, R.B and Pawloski, G and Plunkett, R.K and Rameika, R.A and Raufer, T.M and Rebel, B and Rodrigues, P.A and Rosenfeld, C and Rubin, H.A and Ryabov, V.A and Sanchez, M.C and Schneps, J and Shanahan, P and Smith, C and Sousa, A and Swain, S and Tagg, N and Talaga, R.L and Thomas, J and Tinti, G and Toner, R and Tzanakos, G and Viren, B and Weber, A and Webb, R.C and White, C and Whitehead, L and Wojcicki, S.G and Wright, D.M and Yang, T and Zois, M and MINOS Collaboration and BROOKHAVEN NATIONAL LABORATORY (BNL)
Physical review. D, Particles, fields, gravitation, and cosmology, ISSN 1550-7998, 09/2010, Volume 82, Issue 5
Physical Sciences | Astronomy & Astrophysics | Physics, Particles & Fields | Physics | Science & Technology | Physics - High Energy Physics - Experiment | PHYSICS OF ELEMENTARY PARTICLES AND FIELDS | antineutrino | MUON NEUTRINOS | ELECTRON NEUTRINOS | muon | LIMITING VALUES | DETECTION | neutrino | PHASE TRANSFORMATIONS | transitions
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