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by Abbott, B. P and Abbott, R and Abbott, T. D and Abernathy, M. R and Acernese, F and Ackley, K and Adams, C and Adams, T and Addesso, P and Adhikari, R. X and Adya, V. B and Affeldt, C and Agathos, M and Agatsuma, K and Aggarwal, N and Aguiar, O. D and Aiello, L and Ain, A and Ajith, P and Allen, B and Allocca, A and Altin, P. A and Anderson, S. B and Anderson, W. G and Arai, K and Araya, M. C and Arceneaux, C. C and Areeda, J. S and Arnaud, N and Arun, K. G and Ascenzi, S and Ashton, G and Ast, M and Aston, S. M and Astone, P and Aufmuth, P and Aulbert, C and Babak, S and Bacon, P and Bader, M. K. M and Baker, P. T and Baldaccini, F and Ballardin, G and Ballmer, S. W and Barayoga, J. C and Barclay, S. E and Barish, B. C and Barker, D and Barone, F and Barr, B and Barsotti, L and Barsuglia, M and Barta, D and Bartlett, J and Bartos, I and Bassiri, R and Basti, A and Batch, J. C and Baune, C and Bavigadda, V and Bazzan, M and Bejger, M and Bell, A. S and Berger, B. K and Bergmann, G and Berry, C. P. L and Bersanetti, D and Bertolini, A and Betzwieser, J and Bhagwat, S and Bhandare, R and Bilenko, I. A and Billingsley, G and Birch, J and Birney, R and Biscans, S and Bisht, A and Bitossi, M and Biwer, C and Bizouard, M. A and Blackburn, J. K and Blair, C. D and Blair, D. G and Blair, R. M and Bloemen, S and Bock, O and Boer, M and Bogaert, G and Bogan, C and Bohe, A and Bond, C and Bondu, F and Bonnand, R and Boom, B. A and Bork, R and Boschi, V and Bose, S and Bouffanais, Y and Bozzi, A and Bradaschia, C and ... and LIGO Scientific Collaboration and Virgo Collaboration
The Astrophysical Journal, ISSN 2041-8213, 11/2016, Volume 832, Issue 2, p. L21
Journal Article
Actas Urológicas Españolas, ISSN 0210-4806, 2018, Volume 42, Issue 6, pp. 396 - 405
Resumen Introducción La nefrectomía radical laparoscópica (NRL) es un pilar en el tratamiento del cáncer renal y las pequeñas masas renales. El entrenamiento... 
Urology | Training | Nephrectomy | Assessment | Formación | Laparoscopy | Nefrectomía | Urología | Laparoscopia | Evaluación
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BJU International, ISSN 1464-4096, 02/2009, Volume 103, Issue 3, pp. 285 - 286
Journal Article
Revista Internacional del Trabajo, ISSN 0378-5548, 2002, Volume 121, Issue 4, pp. 457 - 486
La voz de los trabajadores se manifiesta tradicionalmente por conducto de los sindicatos, pero están mermando los índices de afiliación a los mismos. La autora... 
Journal Article
Solid State Ionics, ISSN 0167-2738, 1996, Volume 86, pp. 363 - 367
Journal Article
NUCLEIC ACIDS RESEARCH, ISSN 0305-1048, 1983, Volume 11, Issue 7, pp. 2155 - 2164
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06/2018
Die elektrischen und elektrochemischen Eigenschaften verschiedener Halbleiter können die Verwendbarkeit verschiedener Halbleitermaterialien für einen oder... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
physica status solidi (b), ISSN 0370-1972, 02/1994, Volume 181, Issue 2, pp. 313 - 320
Journal Article
05/2018
Verfahren und Vorrichtungen zum Integrieren von Schaltungen, die sowohl III-N (z. B. GaN)-Transistoren als auch Si-basierte (z. B. Si- oder SiGe-) Transistoren... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
01/2016
Eine Rippe über einer Isolierschicht auf einem Substrat, das eine erste Kristallorientierung aufweist, wird zur Ausbildung einer Oberfläche, die einer zweiten... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
07/2015
Ein III-N-Halbleiterkanal wird auf einer III-N-Übergangsschicht gebildet, die auf einer (111)- oder (110)-Fläche einer Siliciumschablonenstruktur in der Art... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
03/2016
Elektronische Vorrichtungsfinnen können durch epitaxiales Aufwachsenlassen einer ersten Materialschicht auf einer Substratoberfläche an einem Boden eines... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
10/2015
Eine Ausführungsform betrifft das Bilden eines EPI-Films auf einem Substrat, wobei der EPI-Film eine von dem Substrat verschiedene Gitterkonstante aufweist.... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
10/2015
Eine Ausführungsform verwendet eine sehr dünne Schichtnanostruktur (z. B. eine Si- oder SiGe-Flosse) als eine Vorlage zum Aufwachsen einer kristallinen, nicht... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
10/2015
Eine Ausführungsform der Erfindung beinhaltet eine Epitaxial-Schicht, die zum Beispiel direkt einen Nanodraht, eine Flosse- oder eine Säule auf eine Weise... 
SEMICONDUCTOR DEVICES | BASIC ELECTRIC ELEMENTS | ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR | ELECTRICITY
Patent
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