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2004, Clefs concours. Lettres XIXe siècle, ISBN 9782912232861, 287
Book
Plein droit, ISSN 0987-3260, 2018, Volume 118, Issue 3, pp. 14 - 16
C'est à Barcelone que c'est ouvert le cycle de sessions du Tribunal permanent des peuples consacré aux migrations. Son objectif : identifier et juger la chaîne... 
Journal Article
Techniques & culture, ISSN 0248-6016, 12/2015, Issue 64, p. 124
Journal Article
Techniques & Culture, ISSN 0248-6016, 2015, Volume 64, Issue 2, pp. 124 - 127
Une caractéristique de l’œuvre d’art est qu’elle procède de deux ordres, l’intelligible et sensible, dont l’articulation conditionne la possibilité et les... 
Journal Article
Plein droit, ISSN 0987-3260, 2018, Volume 119, Issue 4, pp. 5 - 7
Invités à témoigner lors de la session parisienne du Tribunal permanent des peuples consacré au procès des politiques migratoires européennes qui s'est tenu... 
Journal Article
Plein droit, ISSN 0987-3260, 2018, Volume 118, Issue 3, pp. 17 - 23
Les témoignages qui suivent ont été livrés lors de la session parisienne du Tribunal permanent des peuples sur les politiques migratoires. Nous avons fait le... 
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2007, Volume 298, pp. 81 - 84
BGaAs and BInGaAs alloys have been grown by metalorganic vapour phase epitaxy. The epitaxial layers were grown on (0 0 1) GaAs substrates misoriented 1°... 
B1. BInGaAs | B2. Semiconducting III–V materials | B1. BGaAs | A3. Metalorganic vapour phase epitaxy | B2. Semiconducting III-V materials | metalorganic vapour phase epitaxy | semiconducting III-V materials | ALLOYS | EPITAXIAL-GROWTH | BGAINAS | CRYSTALLOGRAPHY | BGaAs | BInGaAs | LAYERS | Growth | Gallium arsenide | Epitaxy | Physics | Chemical Sciences
Journal Article
Thin Solid Films, ISSN 0040-6090, 2008, Volume 516, Issue 23, pp. 8424 - 8430
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2009, Volume 311, Issue 8, pp. 2385 - 2390
The early stage of 3C-SiC nucleation and islands enlargement on on-axis 6H-SiC(0 0 0 1¯) (C face) were studied by changing the conditions of interaction of a... 
A3. Liquid phase epitaxy | A1. Atomic force microscopy | A1. Nucleation | B2. Silicon carbide | Atomic force microscopy | Nucleation | CHEMICAL-VAPOR-DEPOSITION | SOLID MECHANISM | CRYSTALLOGRAPHY | SILICON-CARBIDE | LAYERS | CVD | Liquid phase epitaxy | EPITAXY | Silicon carbide | TEMPERATURE | HETEROEPITAXY | GROWTH | SINGLE-DOMAIN | Silicon | Epitaxy | Graphite | Material chemistry | Chemical Sciences
Journal Article
Thin Solid Films, ISSN 0040-6090, 2010, Volume 518, Issue 15, pp. 4234 - 4241
The contact between α-SiC crystals and Si–Ge based melts provokes the nucleation of 3C-SiC islands on the crystal surface. Evolution of these islands as a... 
Liquid phase epitaxy | Germanium | Nucleation | Cubic silicon carbide | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH | SINGLE-DOMAIN | SOLID MECHANISM | SILICON-CARBIDE | MATERIALS SCIENCE, COATINGS & FILMS | Liquid phases | Silicon substrates | Evolution | Carbon | Dissolution | Islands | Contact | Enlargement | Material chemistry | Chemical Sciences
Journal Article
Pediatric Transplantation, ISSN 1397-3142, 06/2003, Volume 7, Issue 3, pp. 228 - 235
Journal Article
Thin Solid Films, ISSN 0040-6090, 2008, Volume 516, pp. 8424 - 8430
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2005, Volume 275, Issue 1, pp. e1011 - e1016
Journal Article
Techniques & culture, ISSN 0248-6016, 12/2015, Issue 64
On le sait peu, mais l’art et le design contemporains font maintenant partie des terrains de recherche des ethnologues. L’anthropologie de l’art existe depuis... 
Journal Article
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