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Nano Letters, ISSN 1530-6984, 12/2015, Volume 15, Issue 12, pp. 7970 - 7975
Filamentary-based oxide resistive memory is considered as a disruptive technology for nonvolatile data storage and reconfigurable logic. Currently accepted... 
scalpel SPM | resistive random access memory (RRAM) | resistive switching | Conductive filament | C-AFM tomography | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MECHANISM | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | RRAM | CHEMISTRY, MULTIDISCIPLINARY | DEVICES | NANOSCALE WEAR
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 6/2019, pp. 1 - 12
This paper presents a physically unclonable function (PUF) based on the randomness of soft gate oxide breakdown (BD) locations in MOSFETs, namely, soft-BD PUF.... 
hardware security | CMOS | cryptography | physically unclonable function (PUF) | oxide breakdown (BD)
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2019, Volume 66, Issue 1, pp. 777 - 784
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2018, Volume 39, Issue 3, pp. 351 - 354
Non-localized and bipolar switching in vacancy modulated conductive oxide resistive switching devices (TiN/a-Si/TiO x /TiN) is attributed to defect profile... 
Electrodes | modeling | Modulation | polarity inversion | Switches | Programming | RRAM | Kinetic theory | non-localized switching | Reliability | Object recognition | ENGINEERING, ELECTRICAL & ELECTRONIC | Titanium oxides | Switching | Defects
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 12/2016, Volume 120, Issue 24, p. 245704
The trap-assisted tunneling (TAT) current in tunnel field-effect transistors (TFETs) is one of the crucial factors degrading the sub-60 mV/dec sub-threshold... 
TUNNEL | TRANSISTORS | PHYSICS, APPLIED | PERFORMANCE | NUMERICAL EVALUATION | MODEL | EMISSION | Energy levels | Semiconductor devices | Semiconductors | Field effect transistors | Electric fields | Quantum mechanics
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 2013, Volume 60, Issue 3, pp. 1114 - 1121
The endurance/retention performance of HfO2/Metal cap RRAM devices in a 1T1R configuration shows metal cap dependence. For Hf and Ti caps, owning strong... 
HfO | quantum point conductance (QPC) | thermodynamics | filament shape | Endurance | resistive switching memory (RRAM) | retention | PHYSICS, APPLIED | HfO2 | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
2007, 1. Aufl., Wiley series in materials for electronic and optoelectronic applications, ISBN 9780470013601, 511
The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research... 
Technology | Material Science | Materials | Dielectric films | Microelectronics | Silica
eBook
Journal of Physical Chemistry Letters, ISSN 1948-7185, 05/2015, Volume 6, Issue 10, pp. 1919 - 1924
The formation and rupture of conductive filaments (CFs) inside an insulating medium is used as hardware encoding of the state of a memory cell ("1" - "0") in... 
RESISTIVE MEMORY | MATERIALS SCIENCE, MULTIDISCIPLINARY | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | RESISTANCE | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | MECHANISMS | MODEL
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2014, Volume 61, Issue 9, pp. 3139 - 3144
  Relentless performance and density scaling of modern CMOS devices has come at the expense of circuit stability and variability. In this paper, we... 
Measurement | Usage | Stability | Numerical analysis | Analysis | Voltage | Innovations | Gates (Electronics) | Complementary metal oxide semiconductors | Electric potential | Expenses | Circuits | Nanostructure | Assessments | Devices | Density
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 12/2013, Volume 60, Issue 12, pp. 4002 - 4007
The channel hot carrier degradation mechanisms in n-FinFET devices are studied. In long channel devices, interface degradation by hot carriers mainly degrades... 
Degradation | Temperature measurement | hot carrier | FinFET | Logic gates | Hot carrier injection | logic device | Impact ionization | multigate FET | Charge trapping | Stress | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | Usage | Field-effect transistors | Ionization | Analysis | Innovations | Gates (Electronics)
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 08/2019, Volume 40, Issue 8, pp. 1269 - 1272
Ovonic threshold switching (OTS) selector is a promising candidate to suppress the sneak current paths in resistive switching random access memory (RRAM)... 
Extrapolation | GeSe | Pulse measurements | resistive switching random access memory (RRAM) | probability | Switches | Germanium | ovonic threshold switching (OTS) | selector | Weibull distribution | Reliability | resistive switching random access memory (PRAM) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
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