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Nanoscale, ISSN 2040-3364, 2015, Volume 7, Issue 30, pp. 13096 - 13104
Vertical graphene-based device concepts that rely on quantum mechanical tunneling are intensely being discussed in the literature for applications in... 
Physics - Mesoscale and Nanoscale Physics | Teknik och teknologier | Engineering and Technology | Elektroteknik och elektronik | Electrical Engineering, Electronic Engineering, Information Engineering
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 10/2013, Volume 60, Issue 10, pp. 3271 - 3276
Journal Article
Nuclear Inst. and Methods in Physics Research, B, ISSN 0168-583X, 03/2015, Volume 347, pp. 52 - 57
We present a systematic comparison of two distinct ion-beam based methods for composition analysis of nanometer oxide films: ion-beam channeling and elastic... 
Thin films | RBS | Channeling | High-k dielectrics | EBS | CROSS-SECTIONS | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | PHYSICS, NUCLEAR | OXYGEN | INSTRUMENTS & INSTRUMENTATION | NUCLEAR SCIENCE & TECHNOLOGY | 170-DEGREES BACKSCATTERING | SURFACE | ENERGIES | Analysis | Dielectrics | Energy use | Aluminum | Oxide coatings | Elastic scattering | Hafnium oxide | Ion beams | Fysik | Physical Sciences | Naturvetenskap | Natural Sciences
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2018, Volume 65, Issue 9, pp. 3676 - 3681
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2018, Volume 65, Issue 11, pp. 5145 - 5150
This paper reports on 45-nm fin pitch strained p-type Ge gate-all-around devices fabricated on 300-mm SiGe strain-relaxed-buffers (SRB). By improving the... 
Performance evaluation | finFET | gate-all-around (GAA) | Gallium arsenide | Wires | nanowire (NW) | strained relaxed buffer (SRB) | strained germanium | Logic gates | Silicon | Silicon germanium | Strain | SIGE | PHYSICS, APPLIED | ETCH | ENGINEERING, ELECTRICAL & ELECTRONIC | Germanium | Strain analysis | Stability | Nanowires | Electric wire
Journal Article
Nanoscale, ISSN 2040-3364, 7/2015, Volume 7, Issue 3, pp. 1396 - 1314
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 09/2013, Volume 109, pp. 204 - 207
•Thulium oxide layers on germanium were investigated.•The valence band offset was found to be 2.95eV.•The band gap of thulium oxide was found to be 5.3eV from... 
Valence band offset | Thulium oxide | Band gap | OFFSETS | DESORPTION | PHYSICS, APPLIED | FILMS | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC | Germanium | Stacks | Silicon | Valence band | Maxima | MOSFETs | Deposition | Gates | Teknik och teknologier | Engineering and Technology
Journal Article
Journal Article
Journal of the Electrochemical Society, ISSN 0013-4651, 2013, Volume 160, Issue 11, pp. D538 - D542
A novel process for atomic layer deposition of thulium oxide (Tm2O3) has been developed, employing TmCp3 as metal precursor and H2O as oxidizing agent. The use... 
THIN-FILMS | ELECTROCHEMISTRY | CHEMICAL-VAPOR-DEPOSITION | KAPPA | GATE DIELECTRICS | MICROELECTRONICS | PRECURSORS | MATERIALS SCIENCE, COATINGS & FILMS | Engineering and Technology | Gate Dielectrics | Precursors | Kappa | Teknik och teknologier | Chemical-Vapor-Deposition | Microelectronics | Thin-Films
Journal Article
Solid State Phenomena, ISSN 1012-0394, 08/2018, Volume 282, pp. 132 - 138
A self-limiting wet etching of metal thin films has been developed for the replacement metal gate patterning in advanced logic devices, which will have... 
Multiple threshold voltage (multi-V | Digital etch (DE) | Replacement metal gate (RMG) | Metal films | Etching
Journal Article
Advanced Synthesis & Catalysis, ISSN 1615-4150, 10/2019, Volume 361, Issue 20, pp. 4790 - 4796
An enantioselective organocatalytic conjugate azidation of α,β‐unsaturated ketones is presented. A bifunctional organocatalyst activates TMSN3, triggering the... 
organocatalysis | aza-Michael | direct activation | enantioselective azidation | squaramide | CATALYSIS | ASYMMETRIC-SYNTHESIS | ACID | CHEMISTRY, ORGANIC | MESO-AZIRIDINES | ORGANIC AZIDES | DESYMMETRIZATION | HYDROAZIDATION | CYCLOADDITION | CHEMISTRY, APPLIED | ADDITIONS | Hydrazoic acid | Conjugates | Activation | Ketones | Enantiomers
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2015, Volume 62, Issue 3, p. 934
Journal Article
Organic Letters, ISSN 1523-7060, 08/2017, Volume 19, Issue 16, pp. 4383 - 4386
The first arylogous Michael reaction of 3-aryl phthalides has been developed. The reaction, promoted by catalytic amounts of KOH or K3PO4 and... 
3-ALKENYL PHTHALIDES | RHODIUM | ENANTIOSELECTIVE SYNTHESIS | ANNULATION | CHIRAL PHTHALIDES | NATURAL-PRODUCTS | ACCESS 3-ARYL | CHEMISTRY, ORGANIC | CYCLOPEPTOIDS | PHASE-TRANSFER CATALYSTS | DERIVATIVES
Journal Article
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