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Journal of Applied Physics, ISSN 0021-8979, 2007, Volume 101, Issue 7, p. 73510
The effects of thermal annealing for In0.25Ga0.75As1-yNy/GaAs multiquantum wells (MQWs) have been investigated through thermally detected optical absorption.... 
PHYSICS, APPLIED | PHOTOLUMINESCENCE | MOLECULAR-BEAM-EPITAXY | ALLOYS | LASER-DIODES | STRAIN | GAINNAS | Thermal properties | Annealing | Gallium arsenide | Optical properties | Quantum wells | Analysis | Diffusion
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2007, Volume 101, Issue 7, pp. 073510 - 073510-6
The effects of thermal annealing for In 0.25 Ga 0.75 As 1 − y N y ∕ GaAs multiquantum wells (MQWs) have been investigated through thermally detected optical... 
Journal Article
Optical Materials Express, ISSN 2159-3930, 2015, Volume 5, Issue 2, pp. 380 - 392
We report on the growth of Al0.57Ga0.43N/Al0.38Ga0.63N MQWs grown on a relaxed Al0.58Ga0.42N buffer on AlN template by Metal Organic Vapor Phase Epitaxy. The... 
SAPPHIRE | HETEROJUNCTIONS | ALLOYS | GAN | SEMICONDUCTORS | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | OPTICAL-PROPERTIES | MOVPE | OPTICS | Barriers | Quantum wells | Scanning transmission electron microscopy | Wells | Buffers | Devices | Aluminum nitride | Strain | Optics | Condensed Matter | Materials Science | Physics
Journal Article
Light: Science and Applications, ISSN 2095-5545, 12/2018, Volume 7, Issue 1, pp. 82 - 8
We demonstrate edge-emitting exciton-polariton (polariton) laser operation from 5 to 300 K and polariton amplifiers based on polariton modes within ZnO... 
OPTICS | Integrated circuits | Physics - Mesoscale and Nanoscale Physics | Photonic | Engineering Sciences | Optics
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 2000, Volume 88, Issue 8, pp. 4612 - 4618
This work reports an extensive optical study of a series of In(As,P)/InP strained quantum wells grown by gas source molecular beam epitaxy with various... 
VAPOR-PHASE EPITAXY | HETEROJUNCTION | PHYSICS, APPLIED | SPECTROSCOPY | SUPERLATTICES | BAND DISCONTINUITY | STRAINED SINGLE | SURFACE SEGREGATION | GAAS | INASXP1-X | INASP/INP HETEROSTRUCTURES | Condensed matter | Quantum wells | Research
Journal Article
JOURNAL OF CRYSTAL GROWTH, ISSN 0022-0248, 03/2015, Volume 414, pp. 119 - 122
Five-period AIN/BAIN heterostructure containing boron as high as 11% has been successfully grown by MOVPE. Good periodicity of two alternative layers has been... 
VAPOR-PHASE EPITAXY | Boron | PHYSICS, APPLIED | ALLOYS | MATERIALS SCIENCE, MULTIDISCIPLINARY | III-nitrides | ALBN | BAIN | CRYSTALLOGRAPHY | MOVPE | LAYERS | Condensed Matter | Materials Science | Physics
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2015, Volume 414, pp. 119 - 122
Five-period AlN/BAlN heterostructure containing boron as high as 11% has been successfully grown by MOVPE. Good periodicity of two alternative layers has been... 
B1. III-nitrides | A3. MOVPE | B1. Boron | B1. BAlN | Spectral emissivity | Crystal growth | Boron | Images | Emission | Secondary ion mass spectrometry | Heterostructures | Aluminum nitride
Journal Article
Physical Review Letters, ISSN 0031-9007, 05/2013, Volume 110, Issue 19, p. 196406
We report exciton-polariton condensation in a new family of fully hybrid ZnO-based microcavity demonstrating the best-quality ZnO material available (a bulk... 
PHYSICS, MULTIDISCIPLINARY | Condensed Matter | Physics | Other
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2014, Volume 104, Issue 24, p. 241113
A platform for fabricating polariton lasers operating at room temperature is introduced: nitride-based distributed Bragg reflectors epitaxially grown on... 
PHYSICS, APPLIED | Dielectric strength | Gallium nitrides | Strain relaxation | Silicon substrates | Polaritons | Reflectors | Bragg reflectors | Lasers | Active regions (lasers) | Zinc oxide | Holes | Silicon | Epitaxial growth | Aluminum gallium nitrides | Room temperature | Condensed Matter | Physics | Other
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2011, Volume 99, Issue 10, pp. 101108 - 101108-3
We refine excitonic parameters of bulk GaN by means of time-of-flight spectroscopy of light pulses propagating through crystals. The influence of elastic... 
RECOMBINATION | REFLECTANCE | POLARITONS | PHYSICS, APPLIED | EMISSION-SPECTRA | PROPAGATION | Physics - Materials Science | Condensed Matter | Physics | Other | Teknik och teknologier | TEKNIKVETENSKAP | Engineering and Technology | TECHNOLOGY
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 08/2011, Volume 84, Issue 7, p. 075202
Distortion of light pulses in ZnO caused by both bound and free excitons is demonstrated by time-of-flight spectroscopy. Numerous lines of bound excitons... 
PHYSICS, CONDENSED MATTER | POLARITONS | ENERGY | SEMICONDUCTOR | PROPAGATION | Physics - Materials Science | Teknik och teknologier | TEKNIKVETENSKAP | Engineering and Technology | TECHNOLOGY
Journal Article
Optical Materials, ISSN 0925-3467, 2001, Volume 17, Issue 1, pp. 197 - 200
This work reports a consistent optical study of a series of In(As,P)/InP strained quantum wells (QWs) grown by gas source molecular beam epitaxy (GSMBE).... 
InAsP/InP | Reflectivity | P-As intermixing | Optical absorption | optical absorption | LASERS | MATERIALS SCIENCE, MULTIDISCIPLINARY | OPTICS | reflectivity | INASXP1-X
Journal Article
Optical Materials, ISSN 0925-3467, 2001, Volume 17, 1-2, pp. 197 - 200
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2013, Volume 102, Issue 19, p. 191118
A ZnO planar optical microcavity displaying room-temperature polariton lasing over a wide range of cavity-exciton detunings has been fabricated. The cavity... 
CONDENSATE | PHYSICS, APPLIED | MICROCAVITY | Condensed Matter | Physics | Other
Journal Article
Physical Review B (Condensed Matter and Materials Physics), ISSN 1098-0121, 07/2014, Volume 90, Issue 4
We report on an extensive study of the excitonic properties of GaN and ZnO bulk samples with an accurate determination of excitonic parameters by linear and... 
Four-wave mixing | Semiconductors | Condensed matter | Gallium nitrides | Oscillator strengths | Zinc oxide | Excitation spectra | Excitation
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 12/2015, Volume 432, pp. 37 - 44
10-period Al Ga N/Al Ga N multi-quantum wells (MQWs) were grown on a relaxed Al Ga N buffer on AlN templates on sapphire. The threading dislocations and V-pits... 
A3. Quantum wells | B1. III-nitrides | B3. DUV devices | A3. Metalorganic vapor phase epitaxy | A1. Defects | Grain boundaries | Aluminum compounds | Analysis | Quantum wells | Investigations
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 07/2014, Volume 90, Issue 4
We report on an extensive study of the excitonic properties of GaN and ZnO bulk samples with an accurate determination of excitonic parameters by linear and... 
REFLECTANCE | PHYSICS, CONDENSED MATTER | POLARITONS | HOMOEPITAXIAL GAN | SEMICONDUCTORS | DAMPING DISPERSION | MICROCAVITIES | RELAXATION | TRANSITIONS | ABSORPTION | SCATTERING
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 03/2012, Volume 85, Issue 12
Polariton relaxation mechanisms are analyzed experimentally and theoretically in a ZnO-based polariton laser. A minimum lasing threshold is obtained when the... 
PHYSICS, CONDENSED MATTER | LASERS | Physics - Materials Science
Journal Article
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