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Photonics Research, ISSN 2327-9125, 12/2019, Volume 7, Issue 12, p. SUVP1
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 10/2017, Volume 475, p. 334
We have investigated the microstructure of BxAl1-xN films grown by flow-modulated epitaxy at 1010 °Celsius, with B/(B + Al) gas-flow ratios ranging from 0.06... 
Wurtzite | Aluminum | Backscattering | X-ray diffraction | Electron microscopy | Composition effects | Columnar structure | Studies | Thin films | Diffraction patterns | Boron | Rain | Transmission electron microscopy | Gas flow | Molecular beam epitaxy | Epitaxial growth | Microstructure | Electron energy | Electron energy loss spectroscopy | Crystal structure
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2015, Volume 107, Issue 24
Journal Article
physica status solidi c, ISSN 1862-6351, 04/2015, Volume 12, Issue 4-5, pp. 331 - 333
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 03/2015, Volume 27, Issue 6, p. 642
  Ultraviolet (UV) avalanche photodiodes (APDs) based on Al x Ga1- x N wide-bandgap semiconductor alloys ([Formula Omitted]) are reported. The epitaxial... 
Journal Article
physica status solidi c - current topics in solid state physics, ISSN 1862-6351, 04/2015, Volume 12, Issue 4-5, p. 331
The International Symposium on the Growth of III-Nitrides (ISGN) series of conferences have been premier international forums for experts from academia,... 
Nitrides | Semiconductors | Epitaxy | Transistors
Journal Article
Optics Express, ISSN 1094-4087, 07/2011, Volume 19, Issue 104, pp. A897 - A899
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2010, Volume 96, Issue 22, pp. 221105 - 221105-3
InAlN electron-blocking layers (EBLs) are shown to improve the emission intensity and to mitigate the efficiency droop problem in III-nitride-based visible... 
gallium compounds | PHYSICS, APPLIED | aluminium compounds | electroluminescence | PERFORMANCE | indium compounds | semiconductor devices | light emitting diodes | III-V semiconductors
Journal Article
Physica Status Solidi. A, Applications and Materials Science, ISSN 1862-6300, 09/2013, Volume 210, Issue 9, p. 1768
  Optically pumped deep-ultraviolet lasers operating at room temperature are demonstrated from heterostructures consisting of AlxGa1-xN/AlN grown on (0001) AlN... 
Lasers
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 08/2011, Volume 32, Issue 8, p. 1065
We report GaN/InGaN n-p-n double-heterojunction bipolar transistors with the collector current density [Formula Omitted] and the current gain [Formula Omitted]... 
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 03/2015, Volume 27, Issue 6, pp. 642 - 645
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2017, Volume 110, Issue 1, p. 11105
Deep-UV distributed Bragg reflectors (DBRs) operating at λ = 220–250 nm with reflectivity close to unity were produced using epitaxial Al x Ga1- x N/AlN... 
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2012, Volume 101, Issue 16, p. 161110
Data and analysis are presented for the study of efficiency droop in visible Ill-nitride light-emitting diodes (LEDs) considering the effects of both electron... 
PHYSICS, APPLIED | Solvents | Quantum efficiency | High current | Doping | Light-emitting diodes | Potential barriers | Strain
Journal Article
physica status solidi (b), ISSN 0370-1972, 08/2017, Volume 254, Issue 8, p. 1600699
Journal Article
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