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Journal of Alloys and Compounds, ISSN 0925-8388, 05/2012, Volume 523, pp. 88 - 93
► We present calculations of carrier confinement characteristics. ► An optimization of InxGa1−xN/GaN multiquantum-well (MQW) was made. ► 2DEG sheet carrier... 
Heterojunctions | Electronic properties | Nitride materials | Semiconductors | MOBILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | METALLURGY & METALLURGICAL ENGINEERING | 2-DIMENSIONAL ELECTRON-GAS | CHEMISTRY, PHYSICAL | FIELD-EFFECT TRANSISTORS | SURFACE-STATES | HFETS | PIEZOELECTRIC POLARIZATION | ALGAN/GAN HETEROSTRUCTURES | Aluminum compounds | Liquors | Alloys
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2009, Volume 95, Issue 25, pp. 251905 - 251905-3
Misfit strain relaxation via misfit dislocation (MD) generation was observed in heteroepitaxially grown (Al,In)GaN layers on free-standing semipolar ( 11 2 ¯ 2... 
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2013, Volume 60, Issue 11, pp. 3753 - 3759
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 06/2017, Volume 467, pp. 1 - 5
•Influence of residual carbon in p++-GaN layer on the Ohmic contact has been studied.•A proper concentration of residual carbon is beneficial to lower specific... 
A1. Carbon impurity | B1. p-GaN | A1. Ohmic contact | A3. MOCVD | PHYSICS, APPLIED | Ohmic contact | CHEMICAL-VAPOR-DEPOSITION | Carbon impurity | MATERIALS SCIENCE, MULTIDISCIPLINARY | p-GaN | AIR | CRYSTALLOGRAPHY | MG-DOPED GAN | RESISTIVITY | MOCVD | AU/NI | DEPENDENCE | GROWTH-CONDITIONS
Journal Article
中国物理快报:英文版, ISSN 0256-307X, 2016, Volume 33, Issue 11, pp. 99 - 103
AlGaN/GaN high electron mobility transistors (HEMTs) grown on Fe-modulation-doped (MD) and unintentionally doped (UID) GaN buffer layers are investigated and... 
LEAKAGE | FILMS | ALGAN/GAN HEMTS | PHYSICS, MULTIDISCIPLINARY | ELECTRON-MOBILITY TRANSISTORS | POWER | GAN/SAPPHIRE INTERFACE | LAYER | TEMPLATES
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2010, Volume 96, Issue 23, pp. 231912 - 231912-3
Nonpolar GaN-based light emitting diodes (LEDs) and laser diodes (LDs) show great promise. However, long wavelength emitters ( λ > 500   nm ) have reduced... 
PHYSICS, APPLIED | A-PLANE | DIODES | NITRIDE | NONPOLAR | WURTZITE
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 05/2015, Volume 30, Issue 5, pp. 1 - 8
Since on-axis GaN-on-sapphire substrates with low threading dislocation density are not available in the N-face orientation, we explored the growth of InAlN on... 
Vicinal substrates | N-polar | InAlN | GaN | HEMT | N-face | VAPOR-PHASE EPITAXY | PHYSICS, CONDENSED MATTER | vicinal substrates | ALGAN/GAN HEMTS | MATERIALS SCIENCE, MULTIDISCIPLINARY | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2016, Volume 108, Issue 3, p. 31110
GaN-based micro-dome optical cavities supported on Si pedestals have been demonstrated by dry etching through gradually shrinking microspheres followed by... 
WHISPERING-GALLERY MODES | PHYSICS, APPLIED | OPTICAL MICROCAVITIES | LASER | PHOTONIC QUANTUM RING | EMISSION | MICRORESONATORS | WELLS
Journal Article
physica status solidi (a), ISSN 1862-6300, 05/2015, Volume 212, Issue 5, pp. 1158 - 1161
Journal Article
Journal of Applied Crystallography, ISSN 1600-5767, 06/2019, Volume 52, Issue 3, pp. 637 - 642
The growth mechanism of V‐defects in GaN films was investigated. It was observed that the crystal faces of both the sidewall of a V‐defect and the sidewall of... 
threading dislocations | gallium nitride | transmission electron microscopy | CRYSTALLOGRAPHY | CHEMISTRY, MULTIDISCIPLINARY | Analysis | Silicon | Liquors | Growth conditions | Organic chemistry | Crystal defects | Growth rate | Films | Gallium nitrides | Surface analysis (chemical) | Silicon substrates | Organic chemicals | Chemical vapor deposition | Dislocations | Defects
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 09/2016, Volume 120, Issue 12, p. 124501
In this paper, a theoretical study of N-polar GaN/AlxGa1-xN/GaN heterostructures is conducted systematically. The dependence of two-dimensional hole gas (2DHG,... 
ALGAN/GAN HEMTS | GAN | PHYSICS, APPLIED | Optical properties | Analysis | Electron mobility | Research | Transistors | Gallium compounds | Electric properties
Journal Article
Proceedings of the IEEE, ISSN 0018-9219, 06/2002, Volume 90, Issue 6, pp. 1022 - 1031
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2008, Volume 92, Issue 22, pp. 221110 - 221110-3
We demonstrate high power yellow InGaN single-quantum-well light-emitting diodes (LEDs) with a peak emission wavelength of 562.7 nm grown on low extended... 
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2015, Volume 425, pp. 389 - 392
In this paper we demonstrate ultraviolet (UV) light emitting diodes (LEDs) grown on metamorphic AlGaN buffers on freestanding GaN (202¯1) substrates by ammonia... 
A3 Molecular beam epitaxy | B2 Semiconducting gallium compounds | B3 Light emitting diodes | B1 Nitrides | Circuit components | Ammonia | Light-emitting diodes | Epitaxy | Nitrides | Quantum wells | Gallium compounds | Electric properties | Volt-ampere characteristics | Gallium nitrides | Molecular beam epitaxy | Buffers | Devices | Metamorphic
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 10/2019, Volume 806, pp. 1077 - 1080
Journal Article
半导体学报:英文版, ISSN 1674-4926, 2016, Volume 37, Issue 4, pp. 61 - 68
The dream of epitaxially integrating III-nitride semiconductors on large diameter silicon is being fulfilled through the joint R&D efforts of academia and... 
白色发光二极管 | Si(111)衬底 | 蓝色 | Si衬底 | 芯片 | 多量子阱 | 硅片 | 封装 | GaN-on-Si | III-nitride semiconductors | LED | Semiconductors | Gallium nitrides | Chips | Lighting | Epitaxy | Silicon substrates | Illumination | Light-emitting diodes
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2007, Volume 90, Issue 23, pp. 233504 - 233504-3
Blue In Ga N ∕ Ga N multiple-quantum-well light emitting diodes with a peak emission wavelength of 444 nm were grown on low extended defect density semipolar (... 
MULTIPLE-QUANTUM WELLS | SAPPHIRE | FIELDS | PHYSICS, APPLIED | A-PLANE GAN | GALLIUM NITRIDE FILMS | EMISSION | POLARIZATION
Journal Article