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Optics Letters, ISSN 0146-9592, 04/2017, Volume 42, Issue 8, pp. 1608 - 1611
Journal Article
Optics Letters, ISSN 0146-9592, 04/2017, Volume 42, Issue 8, p. 1608
Journal Article
Optics Letters, ISSN 0146-9592, 04/2017, Volume 42, Issue 8, pp. 1608 - 1611
A high-quality Ge sub(0.88) Si sub(0.08) Sn sub(0.04)/Ge sub(0.94) Sn sub(0.06) multiple quantum well (MQW) structure was grown on a Ge (001) substrate by... 
Transmission electron microscopy | Wavelengths | Mathematical analysis | Quantum wells | Epitaxy | Devices | X ray diffraction | Sputtering
Journal Article
Nano Letters, ISSN 1530-6984, 12/2016, Volume 16, Issue 12, pp. 7521 - 7529
Germanium-tin alloy nanowires hold promise as silicon compatible optoelectronic elements with the potential to achieve a direct band gap transition required... 
core-shell nanowire | Germanium-tin | photoluminescence | optoelectronics | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | PHOTONICS | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | GERMANIUM | FILMS | PRECIPITATION | ALLOYS | GROWTH | OPTICAL INTERCONNECTS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2017, Volume 110, Issue 9, p. 91109
We study the effect of surface passivation on pseudomorphic multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors. A combination of ozone oxidation to... 
PHYSICS, APPLIED | Temperature dependence | Bias | Quantum wells | Photometers | Ozone | Passivity | Aluminum oxide | Atomic layer deposition | Dark current | Organic light emitting diodes | Oxidation | Germanium oxides | Activation energy
Journal Article
OPTICS LETTERS, ISSN 0146-9592, 04/2017, Volume 42, Issue 8, pp. 1608 - 1611
A high-quality Ge0.88Si0.08Sn0.04/Ge0.94Sn0.06 multiple quantum well (MQW) structure was grown on a Ge (001) substrate by sputtering epitaxy. The MQW structure... 
OPTICS | PHOTONICS | SEMICONDUCTORS | SILICON
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 9/2016, Volume 9974, pp. 99740M - 99740M-7
Group-IV semiconductors have the opportunity to have an equivalent or better temperature coefficient of resistance (TCR) than other microbolometer thermistor... 
TCR | Group-IV | SiGe | quantum well | Bolometer | GeSn | microbolometer
Conference Proceeding
ACS Photonics, ISSN 2330-4022, 12/2016, Volume 3, Issue 12, pp. 2231 - 2236
We demonstrate tensile-strained pseudomorphic Ge0.934Sn0.066/Ge quantum wells in a microdisk resonator using silicon nitride stressor layers. The hydrostatic... 
strain | microdisk resonator | germanium-tin | direct band gap | group IV | stressor layer | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | GERMANIUM | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | OPTICS
Journal Article
ACS Photonics, ISSN 2330-4022, 2019, Volume 6, Issue 4, pp. 915 - 923
The full exploration of Si-based photonic integrated circuits is limited by the lack of an efficient light source that is compatible with the complementary... 
LED | lateral junction | strain engineering | group IV light source | electroluminescence | strained germanium | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | DIFFUSION | OPTICS
Journal Article
Photonics Research, ISSN 2327-9125, 12/2017, Volume 5, Issue 6, pp. B7 - B14
An efficient monolithically integrated laser on Si remains the missing component to enable Si photonics. We discuss the design and fabrication of suspended and... 
LASERS | DIODE | OPTICS
Journal Article
2016 IEEE 13th International Conference on Group IV Photonics (GFP), ISSN 1949-2081, 08/2016, Volume 2016-, pp. 46 - 47
Undercut design in a highly-stressed microdisk resonator cavity affects the magnitude and distribution of biaxial strain in the resonator, providing an... 
Geometry | Fabrication | Silicon | Iron | Photonic band gap | Tensile strain
Conference Proceeding
2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016, 08/2016, pp. 21 - 22
Applying tensile strain with silicon nitride is demonstrated to improve the responsivity of germanium-tin (Ge sub(1-x)Sn sub(x)) PIN photodetectors at longer... 
group-IV photonics | strain | germanium-tin | nitride | Si photonics | GeSn | photodetector | Nitrides | Wavelengths | Meetings | Silicon nitride | Optoelectronic devices | Photodetectors | Photonics | Strain
Conference Proceeding
2016 IEEE Photonics Society Summer Topical Meeting Series (SUM), 07/2016, pp. 21 - 22
Applying tensile strain with silicon nitride is demonstrated to improve the responsivity of germanium-tin (Ge 1-x Sn x ) PIN photodetectors at longer... 
strain | group-IV photonics | germanium-tin | nitride | Films | Metals | Si photonics | Photodetectors | photodetector | Photonics | Tensile strain | Dark current | GeSn
Conference Proceeding
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