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Semiconductor Science and Technology, ISSN 0268-1242, 07/2013, Volume 28, Issue 7, p. 74009
This paper reviews the progress of N-polar (000 (1) over bar) GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN... 
THIN-FILMS | VAPOR-PHASE EPITAXY | PHYSICS, CONDENSED MATTER | FACE GAN | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | C-PLANE SAPPHIRE | DISLOCATION REDUCTION | FIELD-EFFECT TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC | GAIN CUTOFF FREQUENCY | ALGAN/GAN HEMTS | IMPURITY INCORPORATION
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 11/2014, Volume 29, Issue 11, p. 113001
Journal Article
Japanese Journal of Applied Physics, Part 2: Letters, ISSN 0021-4922, 12/2007, Volume 46, Issue 45-49, pp. L1087 - L1089
A recessed slant gate processing has been used in AlGaN/GaN high electron mobility transistors (HEMTs) to mitigate the electric field, minimize the dispersion... 
Power measurements | High electron mobility transistor (HEMT) | Gallium nitride | Recess | Slant gate | PHYSICS, APPLIED | recess | power measurements | HEMTS | gallium nitride | high electron mobility transistor (HEMT) | slant gate
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 07/2009, Volume 48, Issue 7, p. 71003
Nitrogen- and Ga-polar GaN and InGaN/GaN multiple quantum-well (MQW) films were prepared via metal organic chemical vapor deposition and evaluated via... 
YELLOW LUMINESCENCE | FACE ALGAN/GAN HETEROSTRUCTURES | SURFACE-MORPHOLOGY | SAPPHIRE SUBSTRATE | SINGLE-CRYSTALS | PHYSICS, APPLIED | MOLECULAR-BEAM EPITAXY | OPTICAL-PROPERTIES | PHASE EPITAXY | IMPURITY INCORPORATION | 2-DIMENSIONAL ELECTRON GASES
Journal Article
Physica Status Solidi (C) Current Topics in Solid State Physics, ISSN 1862-6351, 2008, Volume 5, Issue 9, pp. 2963 - 2965
In this work we demonstrate a light emitting diode (LED) with m -plane quantum wells fabricated on a (000) template. N-polar, n-type GaN was grown by MOCVD on... 
Journal Article
Japanese Journal of Applied Physics, Part 2: Letters, ISSN 0021-4922, 03/2007, Volume 46, Issue 8-11, pp. L230 - L233
N-polar (0001) GaN templates were patterned using holographic lithography to create nanopillar (NP) and nanostripe (NS) arrays. InGaN and GaN was subsequently... 
Nonpolar gallium nitride | Nanostructures | Holographic lithography | N-polar gallium nitride | Indium gallium nitride | Metalorganic chemical vapor deposition | indium gallium nitride | holographic lithography | PHYSICS, APPLIED | metalorganic chemical vapor deposition | OVERGROWTH | GROWTH | nonpolar gallium nitride | nanostructures | NITRIDES
Journal Article
Japanese Journal of Applied Physics, Part 2: Letters, ISSN 0021-4922, 09/2007, Volume 46, Issue 33-35, pp. L842 - L844
An n(+) GaN cap layer has been applied on an AlGaN/GaN high electron mobility transistor (HEMT) to achieve a non-alloyed ohmic contact. Delta dopings were used... 
Contact resistance | High electron mobility transistor (HEMT) | Non-alloyed | GaN cap | Access resistance | AlGaN/GaN | n(+) GaN cap | alGaN/GaN | access resistance | PHYSICS, APPLIED | contact resistance | HEMTS | high electron mobility transistor (HEMT) | LINEARITY | non-alloyed | OHMIC CONTACTS
Journal Article
01/2008, ISBN 9780549842514
The III-nitrides exhibit large electronic polarization fields, which can be manipulated as an additional parameter in device design. The vast majority of the... 
Electrical engineering
Dissertation
physica status solidi (c), ISSN 1610-1634, 07/2008, Volume 5, Issue 9, pp. 2963 - 2965
Journal Article
Patent
Patent
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