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1. Defects in microelectronic materials and devices
by Fleetwood, D. M and Pantelides, Sokrates T and Schrimpf, Ronald Donald
2009, ISBN 1420043765, xvi, 753
Integrated circuits | Metal oxide semiconductor field-effect transistors | Microelectronics | Materials | Testing | Defects
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2. Radiation effects and soft errors in integrated circuits and electronic devices
by Schrimpf, Ronald Donald and Fleetwood, D. M. (Dan M.)
2004, Selected topics in electronics and systems, ISBN 9812389407, Volume 34, viii, 339
Integrated circuits | Electronic circuits | Effect of radiation on
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3. Full Text Evolution of Total Ionizing Dose Effects in MOS Devices With Moore's Law Scaling
by Fleetwood, Daniel M
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 08/2018, Volume 65, Issue 8, pp. 1465 - 1481
The general reduction in the thicknesses of critical dielectric layers driven by Moore's law scaling has led to increasingly more manageable... 
Annealing | oxide traps | Computational modeling | enhanced low-dose-rate sensitivity (ELDRS) | total ionizing dose (TID) | Dielectrics | hydrogen | MOS devices | Integrated circuits | MOS | defects | Logic gates | interface traps | Electric fields | Bipolar devices | BIPOLAR LINEAR CIRCUITS | ELECTRON-SPIN-RESONANCE | THERMALLY-STIMULATED-CURRENT | 1/F NOISE | ENGINEERING, ELECTRICAL & ELECTRONIC | INDUCED DEFECT FORMATION | NUCLEAR SCIENCE & TECHNOLOGY | BORDER TRAPS | X-RAY | INTERFACE-TRAP FORMATION | INDUCED LEAKAGE CURRENT | HARDNESS ASSURANCE
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4. Full Text Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices
by Fleetwood, D. M
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 06/2013, Volume 60, Issue 3, pp. 1706 - 1730
An overview is presented of total ionizing dose (TID) effects in MOS and bipolar devices from a historical perspective, focusing primarily on work presented at... 
Radiation effects | linear bipolar | hydrogen | Defects | hole traps | MOS | ELDRS | MOS capacitors | Logic gates | Charge carrier processes | total ionizing dose | Silicon | interface traps | Integrated circuit modeling | ELECTRON-SPIN-RESONANCE | THERMALLY-STIMULATED-CURRENT | SHALLOW-TRENCH ISOLATION | KAPPA GATE DIELECTRICS | RADIATION-INDUCED CHARGE | M CMOS TECHNOLOGY | ENGINEERING, ELECTRICAL & ELECTRONIC | ENERGY X-RAY | NUCLEAR SCIENCE & TECHNOLOGY | OXIDE-SEMICONDUCTOR DEVICES | INTERFACE-TRAP FORMATION | INDUCED LEAKAGE CURRENT
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5. Full Text The effect of ionization and displacement damage on minority carrier lifetime
by Yang, Jianqun and Li, Xingji and Liu, Chaoming and Fleetwood, Daniel M
Microelectronics Reliability, ISSN 0026-2714, 03/2018, Volume 82, pp. 124 - 129
Based on 1 MeV electrons and 40 MeV Si ion irradiations, the contribution of ionization and displacement damage to the decrease in the minority carrier... 
Heavy ion | Bipolar junction transistor | Minority lifetime | Radiation damage | Electron | Interface traps | PHYSICS, APPLIED | LOWER ENERGY ELECTRONS | NANOSCIENCE & NANOTECHNOLOGY | BIPOLAR TECHNOLOGIES | MECHANISMS | ENGINEERING, ELECTRICAL & ELECTRONIC | HYDROGEN | TRANSISTORS | DEGRADATION | DEVICES | SEPARATION | OXIDES | CHARGE
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6. Full Text Evolution of Total Ionizing Dose Effects in MOS Devices With Moore’s Law Scaling
by Fleetwood, Daniel M
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 08/2018, Volume 65, Issue 8, pp. 1465 - 1481
The general reduction in the thicknesses of critical dielectric layers driven by Moore's law scaling has led to increasingly more manageable... 
Radiation hardening | Semiconductor devices | Computer simulation | Wide bandgap semiconductors | Gallium nitrides | Test procedures | Radiation | Luminosity | Oxides | Dielectrics | Microelectronics | Dosage | Silicon dioxide | Environmental effects | MOS devices | Integrated circuits | Computer applications | Scaling | Silicon | Sensitivity enhancement | High electron mobility transistors | Aluminum gallium nitrides
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7. Full Text Comparing the TID-induced RF performance degradation of floating body and body contacted 130 nm SOI NMOS transistors
by Ge, Hao and Zhang, En Xia and Chen, Jing and Xu, Lingda and Wang, Pan and Wang, Shuo and Chai, Zhan and Fleetwood, Daniel M
Microelectronics Reliability, ISSN 0026-2714, 01/2020, Volume 104, p. 113547
Total-ionizing-dose irradiation-induced RF performance degradation is observed in the input-output (IO) and core transistors of a 130 nm SOI NMOS technology.... 
Cut-off frequency | SOI | TID | Parasitic capacitance
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8. Full Text Correlation of a Bipolar-Transistor-Based Neutron Displacement Damage Sensor Methodology with Proton Irradiations
by Tonigan, Andrew M and Arutt, Charles N and Parma, Edward J and Griffin, Patrick J and Fleetwood, Daniel M and Schrimpf, Ronald D and Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 11/2017, Volume 65, Issue 1
For this research, a bipolar-transistor-based sensor technique has been used to compare silicon displacement damage from known and unknown neutron energy... 
GENERAL STUDIES OF NUCLEAR REACTORS | silicon bipolar transistors | commercial-off-the-shelf parts | displacement damage | ionizing dose | neutron dosimetry | non-ionizing energy loss | PARTICLE ACCELERATORS
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9. Influence of interfacial oxide on the optical properties of single layer CdTe/CdS quantum dots in porous silicon scaffolds
by Gaur Girija and Fleetwood Daniel M and Weller Robert A and Reed Robert A and Weiss Sharon M
Applied Physics Letters, ISSN 0003-6951, 08/2015, Volume 107, Issue 6
Using a combination of continuous wave and time-resolved spectroscopy, we study the effects of interfacial conditions on the radiative lifetimes and... 
Quantum dots | Porous materials | Cadmium sulfides | Photoluminescence | Continuous radiation | Silicon dioxide | Cadmium tellurides | Optical properties | Dependence | Silicon | Charge transfer | Scaffolds | Porous silicon
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10. Full Text Influence of LDD Spacers and H+ Transport on the Total-Ionizing-Dose Response of 65-nm MOSFETs Irradiated to Ultrahigh Doses
by Bonaldo, Stefano and Paccagnella, Alessandro and Gerardin, Simone and Michelis, Stefano and P. Wang and En Xia Zhang and Huiqi Gong and Schrimpf, Ronald D and Fleetwood, Daniel M and Lerario, Edoardo and Borghello, Giulio and Faccio, Federico
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2017, Volume 64, Issue 12, p. 164
Annealing | Radiation | Research
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11. Full Text Bias dependence of total ionizing dose effects in SiGe-SiO2HfO2 p MOS FinFETs
by Duan, Guo Xing and Zhang, Cher Xuan and Zhang, En Xia and Hachtel, Jordan and Fleetwood, Daniel M and Schrimpf, Ronald D and Reed, Robert A and Alles, Michael L and Pantelides, Sokrates T and Bersuker, Gennadi and Young, Chadwin D
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2014, Volume 61, Issue 6, pp. 2834 - 2838
HfO | Double-gate FinFETs | SiGe | threshold voltage shift | total ionizing dose
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12. Full Text Electrical stress and total ionizing dose effects on {\hbox {MoS}}2 transistors
by Zhang, Cher Xuan and Newaz, A.K.M and Wang, Bin and Zhang, En Xia and Duan, Guo Xing and Fleetwood, Daniel M and Alles, Michael L and Schrimpf, Ronald D and Bolotin, Kirill I and Pantelides, Sokrates T
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2014, Volume 61, Issue 6, pp. 2862 - 2867
Electron traps | hbox {MoS} | Total ionizing dose
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13. Full Text Atomic-scale origins of bias-temperature instabilities in SiC - SiO 2 structures
by Shen, Xiao and Zhang, En Xia and Zhang, Cher Xuan and Fleetwood, Daniel M and Schrimpf, Ronald D and Dhar, Sarit and Ryu, Sei-Hyung and Pantelides, Sokrates T
Applied Physics Letters, ISSN 0003-6951, 02/2011, Volume 98, Issue 6, pp. 063507 - 063507-3
We find that atomic-scale mechanisms for bias-temperature instabilities (BTIs) in SiC / SiO 2 structures can differ significantly from those in Si / SiO 2... 
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14. Full Text Defect interactions of H2 in SiO2: Implications for ELDRS and latent interface trap buildup
by Tuttle, Blair R and Hughart, David R and Schrimpf, Ronald D and Fleetwood, Daniel M and Pantelides, Sokrates T
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2010, Volume 57, Issue 6, pp. 3046 - 3053
ELDRS | hardness assurance | gated lateral bipolar transistor | Aging | interface traps | hydrogen | annealing | radiation effects | oxide trapped charge | theory
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15. Full Text A quantitative model for ELDRS and H 2 degradation effects in irradiated oxides based on first principles calculations
by Rowsey, Nicole L and Law, Mark E and Schrimpf, Ronald D and Fleetwood, Daniel M and Tuttle, Blair R and Pantelides, Sokrates T
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2011, Volume 58, Issue 6, pp. 2937 - 2944
A physics-based TCAD model for enhanced low-dose-rate sensitivity in linear bipolar devices is developed. Quantitative agreement is found with measured data... 
Enhanced low-dose-rate sensitivity (ELDRS) | POINT-DEFECTS | THIN-FILMS | MOLECULAR-HYDROGEN | SILICON | BIPOLAR TECHNOLOGIES | AMORPHOUS SIO2 | MECHANISMS | CENTERS | N-it | ENGINEERING, ELECTRICAL & ELECTRONIC | TRANSISTORS | NUCLEAR SCIENCE & TECHNOLOGY | DOSE-RATE SENSITIVITY
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16. Full Text Radiation damage of strontium iodide crystals due to irradiation by 137Cs gamma rays: A novel approach to altering nonproportionality
by Caudel, David and McCurdy, Michael and Fleetwood, Daniel M and Reed, Robert A and Weller, Robert A and Goodwin, Brandon and Rowe, Emmanuel and Buliga, Vladimir and Groza, Michael and Stassun, Keivan and Burger, Arnold
Nuclear Inst. and Methods in Physics Research, A, ISSN 0168-9002, 11/2016, Volume 835, Issue C, pp. 177 - 181
Strontium iodide doped with europium (SrI :Eu ) is a new scintillator being developed for use in high-energy astrophysical detectors with excellent energy... 
Scintillator nonproportionality | Strontium Iodide scintillators | Gamma-ray irradiations | Optical transmission | Recovery of damaged crystals | Radiation damage
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17. Full Text Radiation induced charge trapping in ultrathin HfO 2-based MOSFETs
by Dixit, Sriram K and Zhou, Xing J and Schrimpf, Ronald D and Fleetwood, Daniel M and Pantelides, Sokrates T and Choi, Rino and Bersuker, Gennadi and Feldman, Leonard C
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2007, Volume 54, Issue 6, pp. 1883 - 1890
Constant-voltage-stress (CVS) | Ultrathin | High-κ | Metal-oxide-semiconductor-field-effect-transistors (MOSFETs) | X-ray | Hafnium oxide (HfO | Recovery | Radiation damage
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18. Full Text Radiation-induced oxide charge in low-and high-h 2 environments
by Rowsey, Nicole L and Law, Mark E and Schrimpf, Ronald D and Fleetwood, Daniel M and Tuttle, Blair R and Pantelides, Sokrates T
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 2012, Volume 59, Issue 4, pp. 755 - 759
Electronic structure calculations and irradiation measurements are used to obtain insight into oxide trapped charge mechanisms in varying hydrogen ambients.... 
N | radiation-induced oxide charge | N-ot | DEFECTS | MOS DEVICES | MOLECULAR-HYDROGEN | SILICON | HOLE TRAPS | MECHANISMS | CENTERS | N-it | ENGINEERING, ELECTRICAL & ELECTRONIC | NUCLEAR SCIENCE & TECHNOLOGY | SIO2 THIN-FILMS | INTERFACE-TRAP FORMATION | BIPOLAR OXIDES | Charge density | Hydrogen storage | Trapping | Simulation | Mathematical analysis | Irradiation | Oxides | Density
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19. Full Text Dose enhancement and reduction in SiO2 and high-κ MOS insulators
by Dasgupta, Aritra and Fleetwood, Daniel M and Reed, Robert A and Weller, Robert A and Mendenhall, Marcus H and Sierawski, Brian D
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2010, Volume 57, Issue 6, pp. 3463 - 3469
The effects of 10-keV X-rays and 400-keV end-point-energy bremsstrahlung X-rays on MOS capacitors with SiO2 or HfO2 gate dielectrics and Al and TaSi gate... 
HfO | Dose enhancement | SiO | Monte Carlo radiative energy deposition (MRED) | MOS capacitors | high-κ | ENERGY | HfO2 | high-kappa | DEVICE RESPONSE | ENVIRONMENT | RADIATION | X-RAY SOURCES | ENGINEERING, ELECTRICAL & ELECTRONIC | NUCLEAR-REACTIONS | UPSET | CMOS TRANSISTORS | NUCLEAR SCIENCE & TECHNOLOGY | ELECTRON-PHOTON TRANSPORT | GEANT4 | SiO2
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20. Full Text Effects of total dose irradiation on the gate-voltage dependence of the 1/f noise of nMOS and pMOS transistors
by Francis, Sarah A and Dasgupta, Aritra and Fleetwood, Daniel M
IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2010, Volume 57, Issue 2, pp. 503 - 510
We have found that the room-temperature 1/f-noise gate-voltage and frequency dependences of pMOS transistors are affected significantly by moisture exposure... 
Radiation effects | 1/f noise | Gate-voltage dependence | PHYSICS, APPLIED | OXIDE-SEMICONDUCTOR TRANSISTORS | TRAPPED CHARGE | INTERFACE STATE DENSITY | 1-F NOISE | FIELD-EFFECT TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC | MOS-TRANSISTORS | 1/F-GAMMA NOISE | BORDER TRAPS | LOW-FREQUENCY NOISE | UNIFIED MODEL | radiation effects | Measurement | Usage | Metal oxide semiconductors | Acoustic properties | Analysis | Voltage | Gates (Electronics) | Radiation | Electromagnetic noise | Electric properties | Electric potential | Noise | Moisture | Irradiation | Mathematical models | Devices | Transistors | Density
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