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IEEE Transactions on Nuclear Science, ISSN 0018-9499, 06/2013, Volume 60, Issue 3, pp. 1706 - 1730
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 03/2018, Volume 82, pp. 124 - 129
Based on 1 MeV electrons and 40 MeV Si ion irradiations, the contribution of ionization and displacement damage to the decrease in the minority carrier... 
Heavy ion | Bipolar junction transistor | Minority lifetime | Radiation damage | Electron | Interface traps | PHYSICS, APPLIED | LOWER ENERGY ELECTRONS | NANOSCIENCE & NANOTECHNOLOGY | BIPOLAR TECHNOLOGIES | MECHANISMS | ENGINEERING, ELECTRICAL & ELECTRONIC | HYDROGEN | TRANSISTORS | DEGRADATION | DEVICES | SEPARATION | OXIDES | CHARGE
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 08/2018, Volume 65, Issue 8, pp. 1465 - 1481
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 01/2020, Volume 104, p. 113547
Total-ionizing-dose irradiation-induced RF performance degradation is observed in the input-output (IO) and core transistors of a 130 nm SOI NMOS technology.... 
Cut-off frequency | SOI | TID | Parasitic capacitance
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 11/2017, Volume 65, Issue 1
For this research, a bipolar-transistor-based sensor technique has been used to compare silicon displacement damage from known and unknown neutron energy... 
GENERAL STUDIES OF NUCLEAR REACTORS | silicon bipolar transistors | commercial-off-the-shelf parts | displacement damage | ionizing dose | neutron dosimetry | non-ionizing energy loss | PARTICLE ACCELERATORS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2015, Volume 107, Issue 6
Using a combination of continuous wave and time-resolved spectroscopy, we study the effects of interfacial conditions on the radiative lifetimes and... 
Quantum dots | Porous materials | Cadmium sulfides | Photoluminescence | Continuous radiation | Silicon dioxide | Cadmium tellurides | Optical properties | Dependence | Silicon | Charge transfer | Scaffolds | Porous silicon
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2014, Volume 61, Issue 6, pp. 2834 - 2838
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2014, Volume 61, Issue 6, pp. 2862 - 2867
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2011, Volume 98, Issue 6, pp. 063507 - 063507-3
We find that atomic-scale mechanisms for bias-temperature instabilities (BTIs) in SiC / SiO 2 structures can differ significantly from those in Si / SiO 2... 
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2011, Volume 58, Issue 6, pp. 2937 - 2944
A physics-based TCAD model for enhanced low-dose-rate sensitivity in linear bipolar devices is developed. Quantitative agreement is found with measured data... 
Enhanced low-dose-rate sensitivity (ELDRS) | POINT-DEFECTS | THIN-FILMS | MOLECULAR-HYDROGEN | SILICON | BIPOLAR TECHNOLOGIES | AMORPHOUS SIO2 | MECHANISMS | CENTERS | N-it | ENGINEERING, ELECTRICAL & ELECTRONIC | TRANSISTORS | NUCLEAR SCIENCE & TECHNOLOGY | DOSE-RATE SENSITIVITY
Journal Article
Nuclear Inst. and Methods in Physics Research, A, ISSN 0168-9002, 11/2016, Volume 835, Issue C, pp. 177 - 181
Strontium iodide doped with europium (SrI :Eu ) is a new scintillator being developed for use in high-energy astrophysical detectors with excellent energy... 
Scintillator nonproportionality | Strontium Iodide scintillators | Gamma-ray irradiations | Optical transmission | Recovery of damaged crystals | Radiation damage
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 2012, Volume 59, Issue 4, pp. 755 - 759
Electronic structure calculations and irradiation measurements are used to obtain insight into oxide trapped charge mechanisms in varying hydrogen ambients.... 
N | radiation-induced oxide charge | N-ot | DEFECTS | MOS DEVICES | MOLECULAR-HYDROGEN | SILICON | HOLE TRAPS | MECHANISMS | CENTERS | N-it | ENGINEERING, ELECTRICAL & ELECTRONIC | NUCLEAR SCIENCE & TECHNOLOGY | SIO2 THIN-FILMS | INTERFACE-TRAP FORMATION | BIPOLAR OXIDES | Charge density | Hydrogen storage | Trapping | Simulation | Mathematical analysis | Irradiation | Oxides | Density
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2010, Volume 57, Issue 6, pp. 3463 - 3469
The effects of 10-keV X-rays and 400-keV end-point-energy bremsstrahlung X-rays on MOS capacitors with SiO2 or HfO2 gate dielectrics and Al and TaSi gate... 
HfO | Dose enhancement | SiO | Monte Carlo radiative energy deposition (MRED) | MOS capacitors | high-κ | ENERGY | HfO2 | high-kappa | DEVICE RESPONSE | ENVIRONMENT | RADIATION | X-RAY SOURCES | ENGINEERING, ELECTRICAL & ELECTRONIC | NUCLEAR-REACTIONS | UPSET | CMOS TRANSISTORS | NUCLEAR SCIENCE & TECHNOLOGY | ELECTRON-PHOTON TRANSPORT | GEANT4 | SiO2
Journal Article
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