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Journal of Applied Physics, ISSN 0021-8979, 01/2017, Volume 121, Issue 1, p. 14501
The effects of modulation doping on the intersubband transition (ISBT) properties of semipolar AlGaN/GaN quantum well (QW) are investigated theoretically using... 
LIGHT-EMITTING-DIODES | PHYSICS, APPLIED | ABSORPTION | MU-M | MOLECULAR-BEAM EPITAXY | Quantum wells | Analysis | Optical properties | Aluminum compounds | Research | Semiconductor doping | Electric properties | Polarization | Properties (attributes) | Mathematical analysis | Modulation | Doping | Absorptivity | Modulation doping | Absorption spectra | Aluminum gallium nitrides | Bowing
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2017, Volume 111, Issue 15, p. 152102
This letter reports the implementation of double-drift-layer (DDL) design into GaN vertical Schottky barrier diodes (SBDs) grown on free-standing GaN... 
PT/GAN | PHYSICS, APPLIED | Power loss | Electric potential | Schottky diodes | Gallium nitrides | Bias | Metalorganic chemical vapor deposition | Forward characteristics | High voltages | Substrates | Switching | Organic chemistry | Organic light emitting diodes | Breakdown | Electron mobility | Drift | Power efficiency
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2017, Volume 38, Issue 6, pp. 763 - 766
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 07/2019, Volume 126, Issue 1, p. 15704
We show that secondary electrons in a scanning electron microscope can provide important information about spatial dopant distribution in p-i-n GaN structures,... 
PHYSICS, APPLIED | YIELD | CONTRAST | SEM | DIODES | EMISSION | SURFACES | Thin films | Electric potential | Electron beams | Profiling | Backscattering | Dopants | Electron microscopes | Electron emission
Journal Article
Advances in Optics and Photonics, ISSN 1943-8206, 03/2018, Volume 10, Issue 1, pp. 246 - 308
Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have been extensively investigated as potential replacements for current... 
MULTIPLE-QUANTUM WELLS | SAPPHIRE | GAN | BLUE | GROWTH | OPTICAL-PROPERTIES | OPTICS | HIGH-POWER | NANOWIRE HETEROSTRUCTURES | EMISSION | GREEN | Polarization | Indium gallium nitrides | Efficiency | Organic light emitting diodes | Light emitting diodes | Power efficiency | Composition effects | Material properties
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2019, Volume 114, Issue 8, p. 82102
A strong variation in the luminescence characteristics in Mg-doped GaN grown on mesa structures has been observed, with the sidewall luminescence being... 
PHYSICS, APPLIED | BAND | P-TYPE GAN | NONPOLAR | Crystal growth | Electronic devices | Magnesium | Luminescence | Dependence | Crystal structure | MATERIALS SCIENCE
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 09/2017, Volume 38, Issue 9, pp. 1286 - 1289
This letter reports the first demonstration of 1-kV-class AlN Schottky barrier diodes on sapphire substrates by metal organic chemical vapor deposition. The... 
Temperature measurement | Schottky barriers | semiconductor | breakdown | Schottky barrier diodes | Ohmic contacts | III-V semiconductor materials | Substrates | power electronics | high temperature | Aluminum nitride | POWER | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
01/2019, ISBN 9781392129999
Wide bandgap (WBG) semiconductors GaN (3.4 eV), Ga2O3 (4.8 eV) and AlN (6.2 eV), have gained considerable interests for energy-efficient optoelectronic and... 
Electrical engineering | Condensed matter physics | Nanotechnology
Dissertation
Applied Physics Letters, ISSN 0003-6951, 05/2017, Volume 110, Issue 18, p. 181110
We report the basic nonlinear optical properties, namely, two-photon absorption coefficient ( β ), three-photon absorption coefficient ( γ ), and Kerr... 
PLATFORM | PHYSICS, APPLIED | FREQUENCY COMB GENERATION | 2-PHOTON ABSORPTION | Femtosecond | Gallium nitrides | Optical properties | Refractivity | Defocusing | Absorptivity | Photon absorption | Crystal structure | Photonics
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2017, Volume 110, Issue 16, p. 161105
We demonstrate the nonpolar and semipolar InGaN/GaN multiple-quantum-well (MQW) solar cells grown on the nonpolar m-plane and semipolar ( 20 2 ¯ 1 ) plane bulk... 
LIGHT-EMITTING-DIODES | PHYSICS, APPLIED | LIMITATIONS | POLARIZATION | TAILS | Solar cells | Gallium nitrides | Quantum wells | Substrates | Carrier transport | Open circuit voltage | Quantum efficiency | Indium gallium nitrides | Photovoltaic cells | Efficiency | Optical properties | Collection | Absorption spectra
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 06/2016, Volume 119, Issue 21, p. 213101
InGaN semiconductors are promising candidates for high-efficiency next-generation thin film solar cells. In this work, we study the photovoltaic performance of... 
PHYSICS, APPLIED | BAND | OPTICAL-ABSORPTION EDGE | GAN | Solar cells | Solar batteries | Optical properties | Research | Gallium compounds | Electric properties | Band theory (Physics) | Cadmium telluride | Thin films | Emittance | Energy gap | Photovoltaic cells | Indium gallium nitrides | Thermalization (energy absorption) | Mathematical models | Transmission loss
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2019, Volume 114, Issue 16, p. 162103
This work demonstrates the construction of p-n heterojunctions between mechanically exfoliated beta-phase gallium oxide (β-Ga2O3) and p-GaN. The detailed... 
DENSITY | PHYSICS, APPLIED | PHOTODETECTORS | FIELD-EFFECT TRANSISTORS | Atomic force microscopy | Gallium oxides | Beta phase | Transmission electron microscopy | Microscopy | Gallium nitrides | Heterojunctions | Threshold voltage | Exfoliation | P-n junctions | Photonics
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2018, Volume 65, Issue 8, pp. 3507 - 3513
This paper reports a comprehensive study on the anisotropic electrical properties of vertical ( \overline {\textsf... 
Gallium | Anisotropic magnetoresistance | Crystal anisotropy | semiconductor | Surface morphology | Schottky barrier diodes (SBDs) | Crystals | gallium oxide | Rough surfaces | Substrates | power electronics | Optical surface waves
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2018, Volume 113, Issue 4, p. 43501
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2019, Volume 40, Issue 3, pp. 375 - 378
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2017, Volume 111, Issue 23, p. 233511
We investigate the thermal stability of InGaN solar cells under thermal stress at elevated temperatures from 400 °C to 500 °C. High Resolution X-Ray... 
VOLTAGE | PHYSICS, APPLIED | DIODES | GAN | Solar cells | Short circuit currents | Gallium nitrides | Circuits | Quantum wells | X-ray diffraction | High temperature | Thermal stability | Open circuit voltage | Degradation | Transmission lines | Quantum efficiency | Photovoltaic cells | Reliability analysis | Contact stresses | Thermal stresses
Journal Article