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1967, Zhui dai zhongguo shi liao cong kan, 143
Book
歌曲, ISSN 0454-0816, 2012, Issue 8, pp. 95 - 95
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 12/2008, Volume 55, Issue 12, pp. 3582 - 3589
Journal Article
细胞研究:英文版, ISSN 1001-0602, 2011, Volume 21, Issue 12, pp. 1655 - 1661
Journal Article
Journal of Materials Science, ISSN 0022-2461, 07/2018, Volume 53, Issue 14, pp. 10217 - 10230
Journal Article
AIP Advances, ISSN 2158-3226, 01/2018, Volume 8, Issue 1, pp. 15316 - 015316-9
β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of β-Ga2O3 devices at... 
SINGLE-CRYSTALS | TRANSPORT | PHYSICS, APPLIED | INTERFACE | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | POWER ELECTRONICS | PARAMETERS | Temperature dependence | Electric potential | Schottky diodes | Gallium oxides | Electronic devices | Electrical properties | Thermionic emission | Normal distribution | Ultrawideband | Bias | Barriers | Inhomogeneity
Journal Article
Scientific Reports, ISSN 2045-2322, 12/2016, Volume 6, Issue 1, p. 38493
Oilseed rape (Brassica napus L.) is one of the most important oil crops in China as well as worldwide. Branch angle as a plant architecture component trait... 
QUANTITATIVE TRAIT LOCI | PLANT ARCHITECTURE | AUXIN BIOSYNTHESIS PATHWAY | SHOOT GRAVITROPISM | TILLER ANGLE | MULTIDISCIPLINARY SCIENCES | BULKED SEGREGANT ANALYSIS | ARABIDOPSIS | SEQUENCING DATA | GENOME-WIDE ASSOCIATION | RICE | Quantitative trait loci | Rape plants | Genes | Amino acids | Single-nucleotide polymorphism | Gene mapping | Planting
Journal Article
AIP Advances, ISSN 2158-3226, 06/2018, Volume 8, Issue 6, pp. 65215 - 065215-8
In this letter, MOS capacitors with bilayer dielectrics consisted of large bandgap Al2O3 and high-k HfO2 in different stacking order on n-type doped (100)... 
NANOSCIENCE & NANOTECHNOLOGY | SINGLE-CRYSTALS | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | Electric potential | Semiconductor devices | Current leakage | Hafnium oxide | Dielectrics | MOSFETs | Aluminum oxide | Gallium oxides | Breakdown | Leakage current | Transistors | Gates | Bilayers
Journal Article
CRYSTENGCOMM, ISSN 1466-8033, 4/2019, Volume 21, Issue 17, pp. 2762 - 2767
Herein, the solid-liquid interface and bulk crystal growth habit of β-Ga 2 O 3 were studied during the Czochralski and the modified edge-defined film-fed... 
GALLIUM OXIDE | SINGLE-CRYSTALS | CRYSTALLOGRAPHY | NANOWIRES | CHEMISTRY, MULTIDISCIPLINARY | Crystal growth | Raman spectra | Ultrawideband | Crystals | EFG (crystal growth) | Czochralski method | Optimization | Single crystals | Gallium oxides | Liquid-solid interfaces | Carrier density | Methods | Crystal structure
Journal Article
Neurochemistry International, ISSN 0197-0186, 05/2018, Volume 115, pp. 50 - 60
Ischemic stroke, the main reason for severe disabilities in the world, is associated with a high incidence of sensorimotor and cognitive dysfunction. In this... 
GSK3β | Ischemic stroke | S-oxiracetam | α7 nAChR | Apoptosis
Journal Article
ISSN 1144-0546, 6/2019, Volume 43, Issue 24, pp. 9623 - 9627
Fluorine-containing explosives have potential applications in rocket propellant and explosive formulations because they produce a large number of products with... 
Journal Article