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Applied Physics Letters, ISSN 0003-6951, 12/2011, Volume 99, Issue 26, pp. 263501 - 263501-4
In the study, we reduced the operation current of resistance random access memory (RRAM) by supercritical CO 2 (SCCO 2 ) fluids treatment. The power... 
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 12/2011, Volume 99, Issue 26, p. 263501
In the study, we reduced the operation current of resistance random access memory (RRAM) by supercritical CO2 (SCCO2) fluids treatment. The power consumption... 
nickel | PHYSICS, APPLIED | random-access storage | FILM | silicon compounds | infrared spectra | Fourier transform spectra | power consumption | X-ray photoelectron spectra
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2013, Volume 34, Issue 3, pp. 399 - 401
Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide... 
Resistance | Electrodes | resistive switch | Filament | Switches | Tin | Zinc oxide | silicon oxide | Silicon | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 2012, Volume 33, Issue 12, pp. 1693 - 1695
In this letter, we investigate the origin of hopping conduction in the low-resistance state (LRS) of a resistive random access memory device with supercritical... 
resistance random access memory (RRAM) | hydration-dehydration reaction | supercritical fluid | Hopping conduction | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Surface & Coatings Technology, ISSN 0257-8972, 09/2013, Volume 231, pp. 117 - 121
This work presents the light–color-dependent negative bias stress (NBIS) effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs)... 
Indium gallium zinc oxide | Thin film transistors | Bias stress | Passivation | PHYSICS, APPLIED | THIN-FILM TRANSISTORS | MATERIALS SCIENCE, COATINGS & FILMS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 12/2012, Volume 33, Issue 12, pp. 1696 - 1698
In this letter, we successfully produced resistive switching behaviors by nickel doped into silicon oxide at room temperature. The nickel element was doped... 
Resistance | Nonvolatile memory | Doping | Tin | silicon oxide | Nickel | Silicon | Dielectrics | Nonvolatile memory (NVM) | resistive switching | nickel | RRAM | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Surface & Coatings Technology, ISSN 0257-8972, 09/2013, Volume 231, p. 117
This work presents the light-color-dependent negative bias stress (NBIS) effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs)... 
Zinc oxide
Journal Article
Surface and Coatings Technology, ISSN 0257-8972, 09/2013, Volume 231, pp. 117 - 121
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2013, Volume 102, Issue 4, p. 43508
This report compares Mo-doped and undoped SiO2 thin films of a similar thickness as well as MoOx. The Mo-doped SiO2 film exhibited switching behavior after the... 
DEVICES | PHYSICS, APPLIED | MODEL | THIN-FILM | Thin films | Solvents | Doping | Forming | Silicon | Molybdenum | Switching | Silicon dioxide
Journal Article
Solid-State Electronics, ISSN 0038-1101, 09/2011, Volume 63, Issue 1, pp. 189 - 191
This study investigates a sputtered Sm O thin film to apply into a resistive random access memory device. The proposed device exhibits a stable resistance... 
Resistance switching | Samarium oxide (Sm | Nonvolatile memory | Samarium oxide (Sm2O3) | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of the Electrochemical Society, ISSN 0013-4651, 2011, Volume 158, Issue 10, pp. C319 - C324
The phase transformation of anodized Ti film has been studied. Although X-ray diffraction detected only the amorphous TiO2 phase, transmission electron... 
RAMAN-SPECTRA | OXIDATION | ELECTROCHEMISTRY | TITANIUM | MICROSTRUCTURE | MATERIALS SCIENCE, COATINGS & FILMS | LAYERS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2013, Volume 34, Issue 5, pp. 617 - 619
In this letter, we introduced hydrogen ions into titanium metal doped into SiO 2 thin film as the insulator of resistive random access memory (RRAM) by... 
supercritical fluid | resistive random access memory (RRAM) | Hopping conduction | RERAM | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 2013, Volume 34, Issue 2, pp. 226 - 228
After high-temperature forming (HTF) and room-temperature forming treatments, the resistive switching behavior gets some improvements. The switching ratio is... 
resistance switch | SiO | Forming | high temperature | nonvolatile memory | MEMORY | SiO2 | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of the Electrochemical Society, ISSN 0013-4651, 2012, Volume 159, Issue 3, pp. C133 - C136
Anatase phase of TiO2 has been shown to have very good biocompability. It was frequently observed on Ti surfaces after anodizing and thermal annealing... 
RAMAN-SPECTRA | OXIDATION | ELECTROCHEMISTRY | ALLOYS | SIMULATED BODY-FLUID | NACL | COATINGS | HEAT-TREATMENT | IMPLANTS | TITANIUM | APATITE | MATERIALS SCIENCE, COATINGS & FILMS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2013, Volume 103, Issue 4, p. 42902
In this study, a Pt/BiFeO3/TiN device was fabricated and the resistance switching characteristics were investigated. After the first forming process, the... 
PHYSICS, APPLIED | FILMS | OXIDE | MEMORY
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 2013, Volume 34, Issue 4, pp. 511 - 513
To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low... 
silicon oxide | Nonvolatile memory | resistive switching | zinc | RRAM | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2010, Volume 96, Issue 26, p. 262107
The NiSi2/SiNx compound nanocrystals (CNCs) were fabricated to integrate the compound tunnel barrier into nanocrystal memory, with the inclusion of nitride... 
PHYSICS, APPLIED | capacitor storage | nickel alloys | OXIDE | silicon compounds | nanofabrication | SILICON NANOCRYSTALS | NONVOLATILE MEMORY | transmission electron microscopy | silicon alloys | nanostructured materials | X-ray photoelectron spectra
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2013, Volume 34, Issue 2, pp. 226 - 228
After high-temperature forming (HTF) and room-temperature forming treatments, the resistive switching behavior gets some improvements. The switching ratio is... 
Resistance | resistance switch | Temperature | hbox{SiO}_{2} | Switches | Tin | Ions | Educational institutions | Forming | Sun | high temperature | nonvolatile memory
Journal Article
Thin Solid Films, ISSN 0040-6090, 2011, Volume 520, Issue 5, pp. 1656 - 1659
This paper studies the effects of both the positive and negative forming processes on the resistive switching characteristics of a Pt/Yb O /TiN RRAM device.... 
Forming | RRAM | Nonvolatile resistance switching memory | Yb 2O 3 | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MECHANISM | MATERIALS SCIENCE, MULTIDISCIPLINARY | RESISTANCE | DEVICES | MODEL | Yb2O3 | MATERIALS SCIENCE, COATINGS & FILMS | Thin films | Rare earth metals | Dielectric films | Platinum | Voltage | Titanium nitride | Polarity | Devices | Switching
Journal Article
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