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Applied Physics Letters, ISSN 0003-6951, 12/2013, Volume 103, Issue 23, p. 232104
The anisotropic effective electron masses in wurtzite GaN are determined by generalized infrared spectroscopic ellipsometry. Nonpolar (11 (2) over bar0)... 
PHYSICS, APPLIED | ELLIPSOMETRY | GAAS | CARRIER | Thin films | Conduction bands | Wurtzite | Anisotropy | Hall effect | Plasma frequencies | Carrier density | Electrons | Ellipsometry | THIN FILMS | ELECTRONS | MATERIALS SCIENCE | DOPED MATERIALS | LANGMUIR FREQUENCY | ACCURACY | EFFECTIVE MASS | GALLIUM NITRIDES
Journal Article
New Journal of Physics, ISSN 1367-2630, 05/2018, Volume 20, Issue 5, p. 53016
The framework of many-body perturbation theory led to deep insight into electronic structure and optical properties of diverse systems and, in particular, many... 
indium oxide | first-principles simulations | optical properties | ellipsometry | excitonic effects | AUGMENTED-WAVE METHOD | ELECTRON-GAS | APPROXIMATION | PHYSICS, MULTIDISCIPLINARY | SEMICONDUCTORS | GREENS-FUNCTION | VIBRATIONS | BAND-GAP | GROWTH | ABSORPTION | SPECTRA | Semiconductors | Theory | Optical properties
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2019, Volume 114, Issue 14
The ordinary and extraordinary infrared dielectric functions of α-Ga2O3 thin films with the corundum structure were investigated. The films were grown by mist... 
Free electrons | Phonons | Infrared spectra | Crystallography | Substrates | Ellipsometry | Thin films | Organic chemistry | Corundum | Gallium oxides | Sapphire | Electron mass | Epitaxial growth | Structural analysis
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2019, Volume 114, Issue 14, p. 142102
The ordinary and extraordinary infrared dielectric functions of α-Ga2O3 thin films with the corundum structure were investigated. The films were grown by mist... 
Journal Article
ISSN 1359-7345, 12/2019, Volume 55, Issue 99, pp. 14965 - 14967
The reaction of potassium carbonate with elemental sulfur or selenium in acetone in the presence of [PPN]Cl (PPN = (Ph 3 P) 2 N) produces catena -[S 12 ] 2− ,... 
Journal Article
physica status solidi (b), ISSN 0370-1972, 11/2019, p. 1900522
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 06/2013, Volume 87, Issue 23
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2013, Volume 103, Issue 21, p. 212108
Excitonic emission in heteroepitaxially grown aluminum nitride (AlN) with reduced defect density due to the epitaxial lateral overgrowth (ELO) of patterned... 
Ultraviolet radiation | Compressive properties | Excitons | Sapphire | Spectrum analysis | Photoluminescence | Epitaxial growth | High temperature | Emitters | Aluminum nitride
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 08/2014, Volume 90, Issue 7
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 05/2018, Volume 123, Issue 19, p. 195301
NiO layers were grown on MgO(100), MgO(110), and MgO(111) substrates by plasma-assisted molecular beam epitaxy under Ni-flux limited growth conditions. Single... 
THIN-FILMS | SURFACE-MORPHOLOGY | PHYSICS, APPLIED | MGO | NICKEL-OXIDE | SEMICONDUCTORS | Physics - Applied Physics
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2014, Volume 104, Issue 23, p. 231106
Spectroscopic ellipsometry at room temperature is applied in order to determine the ordinary (epsilon(perpendicular to)) and extraordinary (epsilon(parallel... 
PHYSICS, APPLIED | SPECTROSCOPY | SEMICONDUCTORS | OPTICAL-PROPERTIES | BAND-STRUCTURE | ABSORPTION | ELLIPSOMETRY | THIN-FILM | BULK | TIO2 | Tin dioxide | Line shape | Holes (electron deficiencies) | Electron-hole interaction | Mathematical analysis | Rutile | Ellipsometry
Journal Article
CHEMICAL COMMUNICATIONS, ISSN 1359-7345, 12/2019, Volume 55, Issue 99, pp. 14965 - 14967
The reaction of potassium carbonate with elemental sulfur or selenium in acetone in the presence of [PPN]Cl (PPN = (Ph3P)(2)N) produces catena-[S-12](2-), the... 
CHEMISTRY | BATTERIES | CHEMISTRY, MULTIDISCIPLINARY
Journal Article
APL Materials, ISSN 2166-532X, 02/2019, Volume 7, Issue 2, pp. 22508 - 022508-7
The interband absorption of the transparent conducting semiconductor rutile stannic oxide (SnO2) is investigated as a function of increasing free electron... 
NANOSCIENCE & NANOTECHNOLOGY | PHYSICS, APPLIED | FILMS | OXIDE SEMICONDUCTORS | MATERIALS SCIENCE, MULTIDISCIPLINARY
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2014, Volume 104, Issue 5, p. 51906
We studied the optical polarization of surface-emitted photoluminescence from thick semi-polar (11-22) AlxGa1-xN layers on m-plane sapphire substrates with... 
VAPOR-PHASE EPITAXY | SAPPHIRE | PHYSICS, APPLIED | FILMS | REDUCTION | ALLOYS | OPTICAL-PROPERTIES | GALLIUM NITRIDE | Stacking faults | Optical polarization | Aluminum | Sapphire | Emission analysis | Crystals | Photoluminescence | Basal plane | Substrates
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2013, Volume 103, Issue 1
Journal Article
Applied Physics Express, ISSN 1882-0778, 10/2018, Volume 11, Issue 10, p. 101001
The effective hole masses of wurtzite GaN are determined experimentally by an all-optical method. Therefore, we measure interband transitions as a function of... 
PHYSICS, APPLIED | ALN | SEMICONDUCTORS | INN | EFFECTIVE-MASS PARAMETERS | DIELECTRIC FUNCTION | EXCITONS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2015, Volume 107, Issue 14, p. 142101
The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented AlxGa1-xN multiple quantum wells (MQWs) has... 
PHYSICS, APPLIED | ELASTIC-CONSTANTS | NITRIDE | UV LEDS | ALUMINIUM | QUANTUM WELLS | SAPPHIRE | DESIGN | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS | ULTRAVIOLET RADIATION | WAVELENGTHS | LIGHT EMITTING DIODES | SIMULATION | EFFICIENCY | POLARIZATION | ELECTROLUMINESCENCE
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2015, Volume 106, Issue 18
The valence band order of AlxGa  1−x N is investigated experimentally by analyzing the anisotropic dielectric functions of semipolar (112¯2) AlGaN thin films... 
Thin films | Perturbation theory | Interpolation | Anisotropy | Sapphire | Optical properties | Aluminum gallium nitrides | Bowing | Valence band | Ellipsometry | Aluminum oxide
Journal Article
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