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2009, 2nd ed., ISBN 9780521877480, x, 659
The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel... 
Physics | Nanostructures | Mesoscopic phenomena (Physics) | Solid state electronics
Book
2017, Version 20170801., IOP concise physics, ISBN 1681740591, 1 volume (various pagings)
Accurate thermal modeling and the design of microelectronic devices and thin film structures at the micro- and nanoscales poses a challenge to electrical... 
Thermal properties | Mathematical models | Nanoelectromechanical systems | TECHNOLOGY & ENGINEERING | Heat | Electrical | Electronic devices & materials
Book
1997, Cambridge studies in semiconductor physics and microelectronic engineering., ISBN 9780521461412, Volume 6, xi, 512
This book reviews the results of experimental research into mesoscopic devices, and develops a detailed theoretical framework for understanding their... 
Solid state electronics | Mesoscopic phenomena (Physics) | Nanostructures
Book
2002, Materials science & engineering., Volume 38, no. 5., iv, p. 181-236
Book
07/2018, 1st ed. 2018, Nanostructure Science and Technology, ISBN 3319918958, 241
This book presents research dedicated to solving scientific and technological problems in many areas of electronics, photonics and renewable energy. Energy and... 
Semiconductors | Semiconductor nanoparticles | Materials Science | Nanoscale Science and Technology | Nanotechnology | Nanotechnology and Microengineering | Renewable and Green Energy
eBook
Journal of Heat Transfer, ISSN 0022-1481, 10/2019
Abstract An important challenge in particle-based modeling of electron-phonon interactions is the generally large difference in the statistical weight of the... 
Journal Article
ISSN 1463-9076, 6/2019, Volume 21, Issue 24, pp. 13248 - 13257
Hydrogen incorporation in the fabrication of amorphous Si (a-Si) plays an important role in improving its electronic and optical properties. An important... 
Journal Article
Physical Chemistry Chemical Physics : PCCP, ISSN 1463-9076, 01/2019, Volume 21, Issue 24, pp. 13248 - 13257
Hydrogen incorporation in the fabrication of amorphous Si (a-Si) plays an important role in improving its electronic and optical properties. An important... 
Hydrogen storage | Electronic properties | Molecular dynamics | Amorphous silicon | Reduction | Electronic structure | Optical properties | Chemical bonds | Density functional theory | Position (location) | Localization | Atomic structure | Configurations
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 07/2016, Volume 120, Issue 4
We report on a new numerical approach for multi-band drift within the context of full band Monte Carlo (FBMC) simulation and apply this to Si and InAs... 
Perturbation theory | Computer simulation | Brillouin zones | Numerical methods | Carriers | Time dependence | Runge-Kutta method | Mathematical models | Schroedinger equation | Drift | Nanowires | Electric fields | Monte Carlo simulation
Journal Article
Nano Energy, ISSN 2211-2855, 02/2019, Volume 56, pp. 196 - 206
Here we investigate recombination in polytype gallium arsenide (GaAs) nanowires (NWs) for photovoltaic applications, through photoluminescence studies coupled... 
Nanowires | Polytypism | Modeling | Next generation photovoltaics | PHYSICS, APPLIED | SOLAR-CELLS | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | RELAXATION | NANOSCIENCE & NANOTECHNOLOGY | GAAS | ARRAYS | WURTZITE | PHOTOVOLTAICS | DYNAMICS | ENHANCED ABSORPTION | ZINCBLENDE | EFFICIENCY | Gallium arsenide | Electric properties
Journal Article
Journal of Computational Electronics, ISSN 1569-8025, 07/2019
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 07/2015, Volume 118, Issue 2
The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of... 
Schottky diodes | Doping | Silicon substrates | Integrated circuits | Volt-ampere characteristics | CMOS | Thermionic emission | Mathematical analysis | Shunt resistance | Organic light emitting diodes | Germanium | Nickel | Mathematical models | Epitaxial growth | Nanowires | Three dimensional models
Journal Article
IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 2011, Volume 59, Issue 10, pp. 2566 - 2567
Journal Article
Nuclear Inst. and Methods in Physics Research, A, ISSN 0168-9002, 09/2018, Volume 903, pp. 297 - 301
The response of a PIN diamond diode with a 4.5 m thick i-layer to -particles from a  Po radioactive source has been measured and compared to the response from... 
Charge collection | PIN diode | Radiation hardness | Diamond detector | Neutron detection
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2010, Volume 57, Issue 3, pp. 562 - 570
Journal Article
2011, 1st Edition., ISBN 1441988408, 449
This book surveys the advanced simulation methods needed for proper modeling of state-of-the-art nanoscale devices. It systematically describes theoretical... 
Technology: General Issues | Nanoelectromechanical systems | Transporttheorie | Engineering | Computer-Aided Engineering (CAD, CAE) and Design | Circuits and Systems | Nanostructured materials | Nanotechnology
eBook
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