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Chemical Communications, ISSN 1359-7345, 03/2005, Issue 12, pp. 1592 - 1594
A highly rigid dibenzo[a,d] cycloheptenyl dibenzophosphole with a pre-organized concave shaped binding site acts as an efficient ligand in the palladium... 
LIGANDS | VERSATILE | PINCER COMPLEXES | CHEMISTRY | COORDINATION | ARYL | CATALYTIC-ACTIVITY | CHEMISTRY, MULTIDISCIPLINARY | ARYLBORONIC ACIDS | BIARYLS
Journal Article
Nature Photonics, ISSN 1749-4885, 02/2015, Volume 9, Issue 2, pp. 88 - 92
Large-scale optoelectronics integration is limited by the inability of Si to emit light efficiently(1), because Si and the chemically well-matched Ge are... 
PHYSICS, APPLIED | GERMANIUM | CHIP | INTEGRATION | LASER | SILICON | LIGHT-EMISSION | OPTICS | GAIN | Emittance | Semiconductors | Lasers | Alloy systems | Germanium | Lasing | Silicon | Signatures | Photonics
Journal Article
Thin Solid Films, ISSN 0040-6090, 2010, Volume 518, Issue 9, pp. 2565 - 2568
To maintain the development of MOSFET devices in the last three decades the lateral layout of this important device was scaled down into the sub-50 nm range.... 
MOSFET | Strained silicon | Overlay | E-beam-lithography | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | MATERIALS SCIENCE, COATINGS & FILMS | Integrated circuit fabrication | Silicon | Transistors | Epitaxy
Journal Article
Nature Physics, ISSN 1745-2473, 06/2017, Volume 13, Issue 6, pp. 563 - 567
Spin-momentum locking in a semiconductor device with strong spin-orbit coupling (SOC) is thought to be an important prerequisite for the formation of Majorana... 
CONSTRICTION | TRANSPORT | MAJORANA FERMIONS | PHYSICS, MULTIDISCIPLINARY | WIRE | SUPERCONDUCTOR | Exchange | Formations | Conductance | Behavior | Nanowires | Transport | Devices | Signatures | Physics - Mesoscale and Nanoscale Physics
Journal Article
Chemistry of Materials, ISSN 0897-4756, 07/2015, Volume 27, Issue 13, pp. 4693 - 4702
The recent observation of a fundamental direct bandgap for GeSn group W alloys and the demonstration of low temperature lasing provide new perspectives on the... 
GERMANIUM | FILMS | INTEGRATION | ALLOYS | MATERIALS SCIENCE, MULTIDISCIPLINARY | STRAIN RELAXATION | GROWTH | CHEMISTRY, PHYSICAL | LIGHT-EMISSION | MODEL | GAIN
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2013, Volume 103, Issue 19, p. 192110
This letter presents the epitaxial growth and characterization of a heterostructure for an electrically injected laser, based on a strained GeSn active well.... 
PHYSICS, APPLIED | GERMANIUM | SILICON | GROWTH | QUANTUM-WELL LASERS | NANOSTRUCTURE | MODEL | GE1-XSNX | LAYERS | Tensile strain | Intermetallic compounds | Doping | Tin | Germanium | Epitaxial growth | Heterostructures | Alloying
Journal Article
Optics Express, ISSN 1094-4087, 01/2016, Volume 24, Issue 2, pp. 1358 - 1367
We present results on CVD growth and electro-optical characterization of Ge0.92Sn0.08/Ge p-i-n heterostructure diodes. The suitability of Ge as barriers for... 
BANDGAP | LASERS | PHOTODETECTORS | ALLOYS | SILICON | GROWTH | OPTICS
Journal Article
Angewandte Chemie, International Edition, ISSN 1433-7851, 2010, Volume 49, Issue 2, pp. 385 - 389
Radical changes: One single P-Rh-P angle determines whether the odd electron in the paramagnetic complex [Rh(trop2PPh)(PPh3)] is delocalized over the whole... 
FNWI top publication | radicals | valence isomerization | EPR spectroscopy | redox chemistry | rhodium | Redox chemistry | Rhodium | Valence isomerization | Radicals | GROUND-STATE | M=FE | CHEMISTRY, MULTIDISCIPLINARY | HYDROGEN | SPECTROSCOPY | LIGANDS | D-RHODIUM | CATION | AMIDES
Journal Article
Journal of Economic Entomology, ISSN 0022-0493, 06/2016, Volume 109, Issue 3, pp. 1094 - 1101
Anastrepha fraterculus (Wiedemann) (Diptera: Tephritidae) is among the most important pests of fruit trees in South America, where it can cause losses of up to... 
Biological control | Parasitoid | Insect rearing | parasitoid | insect rearing | QUALITY | INDICATOR | biological control | PELOTAS | ENTOMOLOGY | BRAZIL | SUPERPARASITISM | BRACONIDAE | DIACHASMIMORPHA-LONGICAUDATA HYMENOPTERA | LARVAL-PREPUPAL | PARASITOIDS | FRUIT-FLIES DIPTERA
Journal Article
Scientific Reports, ISSN 2045-2322, 12/2018, Volume 8, Issue 1, pp. 15557 - 13
Since the first demonstration of lasing in direct bandgap GeSn semiconductors, the research efforts for the realization of electrically pumped group IV lasers... 
DOT INFRARED PHOTODETECTORS | QUANTUM-WELL | LASERS | MULTIDISCIPLINARY SCIENCES | GROWTH | GAP | MODEL | ABSORPTION | DEPENDENCE | Conduction | Quantum dots | Lasers | Optical properties
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2013, Volume 102, Issue 19, p. 192103
In this letter, we propose a heterostructure design for tunnel field effect transistors with two low direct bandgap group IV compounds, GeSn and highly tensely... 
PHYSICS, APPLIED | GE1-XSNX ALLOYS
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 02/2013, Volume 113, Issue 5, p. 53706
We have performed a combined spectroscopy and microscopy study on surfaces of Sb2Te3/Si(111) thin films exposed to air and annealed under ultra-high vacuum... 
INSULATORS | PHYSICS, APPLIED | BI2TE3 | SPIN POLARIZATION | Thin films | Scanning tunneling microscopy | Electronic structure | Fermi level | Fermi surfaces | Photoemission | Images | Spectra | Protective coatings
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 10/2016, Volume 120, Issue 16, p. 165301
We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be... 
THIN-FILMS | BI2TE3 FILMS | TRANSPORT | PHYSICS, APPLIED | SB2TE3 | SINGLE DIRAC CONE | MOLECULAR-BEAM EPITAXY | GROWTH | SURFACE | BI2SE3 | DEEP IMPURITIES | Terahertz spectroscopy | Usage | Scattering (Physics) | Research | Analysis | Electric insulators | Physics - Mesoscale and Nanoscale Physics
Journal Article
Nano Letters, ISSN 1530-6984, 05/2016, Volume 16, Issue 5, pp. 3116 - 3123
One-dimensional ballistic transport is demonstrated for a high-mobility InAs nanowire device. Unlike conventional quantum point contacts (QPCs) created in a... 
quantum point contacts | g factors | InAs nanowire | h anomaly | exchange interaction | Ballistic transport | 0.7·2e
Journal Article
Thin Solid Films, ISSN 0040-6090, 04/2014, Volume 557, pp. 183 - 187
Journal Article
Scientific Reports, ISSN 2045-2322, 12/2019, Volume 9, Issue 1, pp. 259 - 9
In recent years much effort has been made to increase the Sn content in GeSn alloys in order to increase direct bandgap charge carrier recombination and,... 
MULTIDISCIPLINARY SCIENCES | Integrated circuits | Recombination | Temperature effects | Lasers | Alloys | Luminescence | Photons | Photonic | Materials Science | Micro and nanotechnologies | Optics | Condensed Matter | Microelectronics | Engineering Sciences | Physics
Journal Article
Nanoscale, ISSN 2040-3364, 01/2015, Volume 7, Issue 1, pp. 356 - 364
In this report, we present the growth and structural analyses of broken gap InAs/GaSb core-shell nanowires by molecular beam epitaxy using an Au-free approach.... 
PHYSICS, APPLIED | HETEROSTRUCTURES | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | WURTZITE | INAS NANOWIRES | MBE GROWTH | SUPERLATTICES | GAAS NANOWIRES | EMISSION | CRITICAL DIMENSIONS | Lattices | Shells | Molecular beam epitaxy | Nanowires | Cross sections | Indium arsenides | Deposition | Dislocations
Journal Article