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Applied Physics Letters, ISSN 0003-6951, 08/2017, Volume 111, Issue 9, p. 92101
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the prospect of efficient laser sources monolithically integrated on a Si... 
Condensed Matter | Electromagnetism | Engineering Sciences | Physics | Other
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2017, Volume 111, Issue 9
Recent demonstrations of optically pumped lasers based on GeSn alloys put forward theprospect of efficient laser sources monolithically integrated on a Si... 
Tin | Lasing | Disks | Photonics
Journal Article
Nanotechnology, ISSN 0957-4484, 10/2016, Volume 27, Issue 48, p. 485701
One of the major challenges in the growth of vapor-liquid-solid (VLS) nanowires is the control of dopant incorporation in the structures. In this work, we... 
EDX | germanium | phosphorus doping | nanowire | resistivity | PHYSICS, APPLIED | SOLAR-CELLS | CHEMICAL-VAPOR-DEPOSITION | PHOTONICS | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON NANOWIRES | NANOSCIENCE & NANOTECHNOLOGY | FIELD-EFFECT TRANSISTORS | TRANSPORT | TEMPERATURE | GROWTH | Physics
Journal Article
Nano Letters, ISSN 1530-6984, 04/2015, Volume 15, Issue 4, pp. 2429 - 2433
Applying tensile strain in a single germanium crystal is a very promising way to tune its bandstructure and turn it into a direct band gap semiconductor. In... 
Laue | Germanium | tensile strain | XRD | photocurrent | nanowire | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | LASER | MATERIALS SCIENCE, MULTIDISCIPLINARY | photo current | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | DEFORMATION | CHEMISTRY, MULTIDISCIPLINARY | LIGHT-EMISSION | Spectroscopy | Photoelectric effect | Photocurrent | Semiconductors | X-rays | Crystals | Nanowires | Strain | Physics
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2015, Volume 107, Issue 19, p. 191904
High tensile strains in Ge are currently studied for the development of integrated laser sources on Si. In this work, we developed specific... 
SPECTROSCOPY | STRESS | PHYSICS, APPLIED | Physics
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2016, Volume 109, Issue 24, p. 242107
Adding Tin (Sn) to Germanium (Ge) can turn it into a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. Several approaches... 
PHYSICS, APPLIED | GERMANIUM | LASERS | FILMS | SILICON | GAP | DETECTOR | LIGHT-EMISSION | DIFFRACTION | STRESSOR | STRAIN | Physics
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2017, Volume 110, Issue 11, p. 112101
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the... 
EPITAXY | PHYSICS, APPLIED | GERMANIUM | ALLOYS | SEMICONDUCTORS | SILICON | TIN | GE1-XSNX | SCATTERING | DEPENDENCE | Condensed Matter | Electromagnetism | Engineering Sciences | Physics | Other
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2016, Volume 108, Issue 24, p. 241902
Ge under high strain is predicted to become a direct bandgap semiconductor. Very large deformations can be introduced using microbridge devices. However, at... 
FREQUENCIES | HIGH-PRESSURE | PHYSICS, APPLIED | GERMANIUM | SEMICONDUCTORS | RAMAN-SPECTROSCOPY | SILICON | NANOMEMBRANES | STRESS | MICRODIFFRACTION | MISFIT DISLOCATIONS | Physics - Materials Science | Physics
Journal Article
Thin Solid Films, ISSN 0040-6090, 03/2016, Volume 602, pp. 13 - 19
We have quantified the impact of the PH3 mass-flow and the H2 annealing scheme on the structural and optical properties of thin and thick Ge:P layers grown at... 
Diffusion | Chemical vapor deposition | Stress | Semiconducting germanium | Doping | Surface structure | ROOM-TEMPERATURE | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | GAIN | MATERIALS SCIENCE, COATINGS & FILMS | Annealing | Optical properties | Analysis | Vapour deposition | Valleys | Atomic properties | Germanium | Conduction band | Thermal cycling
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2017, Volume 110, Issue 11
GeSn alloys are the subject of intense research activities as these group IV semiconductors present direct bandgap behaviors for high Sn contents. Today, the... 
Organic chemistry | Tin | Germanium | Chemical composition | Raman spectroscopy
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2016, Volume 109, Issue 24
Adding Tin (Sn) to Germanium (Ge) can turn it into a direct bandgap group IV semiconductor emitting in the mid-infrared wavelength range. Several approaches... 
Photoelectric effect | Energy gap | Photocurrent | Deformation | Optical properties | Photoluminescence | Tin | Germanium
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 02/2017, Volume 121, Issue 5, p. 55702
The application of high values of strain to Ge considerably improves its light emission properties and can even turn it into a direct band gap semiconductor.... 
MICROSTRUCTURES | FREQUENCIES | PHYSICS, APPLIED | SPECTROSCOPY | SILICON | GERMANIUM NANOWIRES | TENSILE STRAIN | LIGHT-EMISSION | SI1-XGEX ALLOYS | MICRODIFFRACTION | Germanium | Usage | Calibration | Raman spectroscopy | Optical properties | Electric properties | Condensed Matter | Physics | Other
Journal Article
Surface Science, ISSN 0039-6028, 03/2019, Volume 681, p. 64
The electron--phonon coupling strength in the spin--split valence band maximum of single-layer MoS.sub.2 is studied using angle-resolved photoemission... 
Specific gravity | Analysis | Density functionals
Journal Article
MRS Communications, ISSN 2159-6859, 09/2017, Volume 7, Issue 3, pp. 691 - 694
Applying sufficient tensile strain to Ge leads to a direct bandgap group IV semiconductor, which emits in the mid-infrared (MIR) wavelength range. However,... 
ROOM-TEMPERATURE | GERMANIUM | CHIP | MATERIALS SCIENCE, MULTIDISCIPLINARY | INTEGRATED-CIRCUITS | SILICON | GAINASSB PHOTODIODES | MU-M | DIRECT-BAND-GAP | Bridges | Integrated optics | CMOS | Electronic components | Spectrum analysis | Silicon substrates | Germanium | Photonics | Condensed Matter | Physics | Other
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 02/2017, Volume 121, Issue 5
The application of high values of strain to Ge considerably improves its light emissionproperties and can even turn it into a direct band gap semiconductor.... 
Axial stress | Bridges | Deformation | Spectrum analysis | Linearity | Plane strain | Strain measurement | Potential theory | Nonlinearity | Raman spectroscopy
Journal Article
Progress in Crystal Growth and Characterization of Materials, ISSN 0960-8974, 06/2017, Volume 63, Issue 2, pp. 1 - 24
Journal Article