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IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 01/2018, Volume 53, Issue 1, pp. 124 - 133
A 64-word-line-stacked 512-Gb 3-b/cell 3-D NAND flash memory is presented. After briefly examining the challenges that occur to a stack, several technologies... 
NAND flash memory | Annealing | self IO test | Programming | Built-in self-test | 64 word-line(WL) stack | Niobium | cache program | Loading | Logic gates | 3-D NAND | Reliability | 3-bit per cell | error correction | V-NAND | reliability | ENGINEERING, ELECTRICAL & ELECTRONIC | Performance enhancement | Flash memory (computers)
Journal Article
Monthly Notices of the Royal Astronomical Society, ISSN 0035-8711, 2017, Volume 465, Issue 3, pp. 2983 - 2990
Journal Article
Monthly Notices of the Royal Astronomical Society, ISSN 0035-8711, 03/2017, Volume 465, Issue 3, p. 2983
  We present high-resolution (0.4 arcsec) mid-infrared (mid-IR) polarimetric images and spectra of WL 16, a Herbig Ae star at a distance of 125 pc. WL 16 is... 
Stars & galaxies | Spectrum analysis | Morphology | Infrared radiation | Magnetic fields | Astronomy
Journal Article
Monthly Notices of the Royal Astronomical Society, ISSN 0035-8711, 03/2017, Volume 465, Issue 3, pp. 2983 - 2983
We present high-resolution (0.4 arcsec) mid-infrared (mid-IR) polarimetric images and spectra of WL 16, a Herbig Ae star at a distance of 125 pc. WL 16 is... 
Polarization | Alignment | Polyallylamine hydrochloride | Dust | Grains | Stars | Disks | Magnetic fields
Journal Article
Conference Proceeding
2018 IEEE International Solid - State Circuits Conference - (ISSCC), ISSN 0193-6530, 02/2018, Volume 61, pp. 340 - 342
Since the first demonstration of a production quality three-dimensional (3D) stacked-word-line NAND Flash memory [1], the 3b/cell 3D NAND Flash memory has seen... 
Degradation | Three-dimensional displays | Bit error rate | Computer architecture | Programming | Sensors | Flash memories
Conference Proceeding
2019 IEEE International Solid- State Circuits Conference - (ISSCC), ISSN 0193-6530, 02/2019, Volume 2019-, pp. 390 - 392
Continued transistor scaling increases random V_{t} variation, and wire routing resistance and capacitance; it degrades SRAM performance and results in SRAM... 
Semiconductor device measurement | Market research | FinFETs | Random access memory | Crosstalk | Optimization
Conference Proceeding
Progress In Electromagnetics Research C, ISSN 1937-8718, 2015, Volume 59, pp. 41 - 49
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 01/2015, Volume 50, Issue 1, pp. 204 - 213
In this work, we present a true 3D 128 Gb 2 bit/cell vertical-NAND (V-NAND) Flash product for the first time. The use of barrier-engineered materials and gate... 
Couplings | 3-D vertical-nand flash | Microprocessors | negative counter-pulse | External high-voltage supply | good endurance | Ash | Programming | Logic gates | Arrays | high performance | WL crosstalk reduction | 3-D vertical-NAND flash | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal Article
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, ISSN 1063-8210, 01/2016, Volume 24, Issue 1, pp. 92 - 102
Journal Article
2017 IEEE International Solid-State Circuits Conference (ISSCC), 02/2017, pp. 202 - 203
The advent of emerging technologies such as cloud computing, big data, the internet of things and mobile computing is producing a tremendous amount of data. In... 
Three-dimensional displays | Annealing | Built-in self-test | Programming | Generators | Flash memories | Clocks
Conference Proceeding
by Klionsky, Daniel J and Abdelmohsen, Kotb and Abe, Akihisa and Abedin, Md Joynal and Abeliovich, Hagai and Acevedo Arozena, Abraham and Adachi, Hiroaki and Adams, Christopher M and Adams, Peter D and Adeli, Khosrow and Adhihetty, Peter J and Adler, Sharon G and Agam, Galila and Agarwal, Rajesh and Aghi, Manish K and Agnello, Maria and Agostinis, Patrizia and Aguilar, Patricia V and Aguirre-Ghiso, Julio and Airoldi, Edoardo M and Ait-Si-Ali, Slimane and Akematsu, Takahiko and Akporiaye, Emmanuel T and Al-Rubeai, Mohamed and Albaiceta, Guillermo M and Albanese, Chris and Albani, Diego and Albert, Matthew L and Aldudo, Jesus and Algül, Hana and Alirezaei, Mehrdad and Alloza, Iraide and Almasan, Alexandru and Almonte-Beceril, Maylin and Alnemri, Emad S and Alonso, Covadonga and Altan-Bonnet, Nihal and Altieri, Dario C and Alvarez, Silvia and Alvarez-Erviti, Lydia and Alves, Sandro and Amadoro, Giuseppina and Amano, Atsuo and Amantini, Consuelo and Ambrosio, Santiago and Amelio, Ivano and Amer, Amal O and Amessou, Mohamed and Amon, Angelika and An, Zhenyi and Anania, Frank A and Andersen, Stig U and Andley, Usha P and Andreadi, Catherine K and Andrieu-Abadie, Nathalie and Anel, Alberto and Ann, David K and Anoopkumar-Dukie, Shailendra and Antonioli, Manuela and Aoki, Hiroshi and Apostolova, Nadezda and Aquila, Saveria and Aquilano, Katia and Araki, Koichi and Arama, Eli and Aranda, Agustin and Araya, Jun and Arcaro, Alexandre and Arias, Esperanza and Arimoto, Hirokazu and Ariosa, Aileen R and Armstrong, Jane L and Arnould, Thierry and Arsov, Ivica and Asanuma, Katsuhiko and Askanas, Valerie and Asselin, Eric and Atarashi, Ryuichiro and Atherton, Sally S and Atkin, Julie D and Attardi, Laura D and Auberger, Patrick and Auburger, Georg and Aurelian, Laure and Autelli, Riccardo and Avagliano, Laura and Avantaggiati, Maria Laura and Avrahami, Limor and Awale, Suresh and Azad, Neelam and Bachetti, Tiziana and Backer, Jonathan M and Bae, Dong-Hun and Bae, Jae-sung and Bae, Ok-Nam and Bae, Soo Han and Baehrecke, Eric H and Baek, Seung-Hoon and Baghdiguian, Stephen and Bagniewska-Zadworna, Agnieszka and ... and Medicinska fakulteten and Region Östergötland and Linköpings universitet and Institutionen för klinisk och experimentell medicin and Diagnostikcentrum and Klinisk patologi och klinisk genetik and Institutionen för medicin och hälsa and Avdelningen för läkemedelsforskning and Avdelningen för cellbiologi
Autophagy, ISSN 1554-8627, 01/2016, Volume 12, Issue 1, pp. 1 - 222
Journal Article