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Abstract and Applied Analysis, ISSN 1085-3375, 2009, Volume 2009
We study global behavior of the following max-type difference equation x(n+1) = max{1/x(n), A(n)/x(n-1)}, n = 0, 1,..., where {An}(n=0)(infinity) is a sequence... 
MONOTONIC SEQUENCES | MATHEMATICS, APPLIED | PERIODIC COEFFICIENTS | MAXIMUM | EVENTUAL PERIODICITY | POSITIVE SOLUTIONS | X(N+1) | Numbers | Mathematics
Journal Article
ChemPhysChem, ISSN 1439-4235, 02/2015, Volume 16, Issue 2, pp. 295 - 298
Metallofullerenes of GdxHo3−xN@C80 and GdxLu3−xN@C80 encapsulating mixed‐metal nitride clusters were synthesized. Spectroscopic characterization of... 
theoretical calculations | endofullerenes | cage compounds | vibrational properties | absorption | Analysis | Nanotechnology
Journal Article
Clinical Chemistry and Laboratory Medicine (CCLM), ISSN 1434-6621, 12/2014, Volume 52, Issue 12, pp. 1771 - 1779
The Sysmex XN (XN) modular system (Sysmex, Kobe, Japan) is a new automated hematology analyzer equipped with different principles from its previous version,... 
Sysmex XE-2100 | cord blood | Sysmex XN | flag | performance | ACCURATE | ADVIA 120 | CELL-DYN SAPPHIRE | COUNT | UNICEL DXH 800 | MEDICAL LABORATORY TECHNOLOGY | XE-5000 | Blood Cell Count - methods | Blood Cell Count - instrumentation | Humans | Middle Aged | Lymphocytes - cytology | Fetal Blood - cytology | Gestational Age | Young Adult | Birth Weight | Adult | Female | Infant, Newborn | Leukocytes - cytology
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 01/2017, Volume 101, pp. 144 - 151
High-Al-content AlxGa1−xN films with x varying from 0.33 to 0.79 were grown on GaN templates with the high temperature AlN (HT-AlN) interlayer by metal organic... 
High-temperature AlN interlayer | High Al content | MOCVD | AlxGa1−xN | PHYSICS, CONDENSED MATTER | PHOTOLUMINESCENCE | THREADING DISLOCATIONS | ALGAN EPILAYERS | LOCAL POTENTIAL FLUCTUATIONS | FREEZE-OUT | MULTIPLE-QUANTUM WELLS | EXCITON LOCALIZATION | MOSAIC STRUCTURE | ALLOYS | AlxGa1-xN | EPITAXIAL GAN FILMS
Journal Article
Journal of Computational Analysis and Applications, ISSN 1521-1398, 2017, Volume 22, Issue 7, pp. 1361 - 1370
Journal Article
The Journal of Chemical Thermodynamics, ISSN 0021-9614, 2003, Volume 35, Issue 11, pp. 1751 - 1762
Coexistence curves of ( T, n), ( T, x) and ( T, φ), where n, x, and φ are refractive index, mole fraction and volume fraction, respectively, for the binary... 
Coexistence curve | N-methyl-2-pyrrolidone | Critical phenomena | Refractive index | Cyclooctane | Cyclohexane | THERMODYNAMICS | coexistence curve | LIQUID CRITICAL PHENOMENA | N-ALKANE | critical phenomena | CHEMISTRY, PHYSICAL | refractive index | cyclooctane | cyclohexane
Journal Article
Journal of the Electrochemical Society, ISSN 0013-4651, 2012, Volume 159, Issue 5, pp. G56 - G61
Journal Article
Journal of Micromechanics and Microengineering, ISSN 0960-1317, 09/2016, Volume 26, Issue 11, p. 115002
This paper is aimed at examining the validity of material constants reported for use in surface acoustic wave (SAW) device simulations. First, based on the... 
SAW | shear vibration | dispersion | ScAlN | INSTRUMENTS & INSTRUMENTATION | PHYSICS, APPLIED | RESONATORS | NANOSCIENCE & NANOTECHNOLOGY | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Abstract and Applied Analysis, ISSN 1085-3375, 2010, Volume 2010
We study the following difference equation xn+1 =(p+xn-1 )/(qxn +xn-1 ) , n=0,1,..., where p,q∈(0,+∞) and the initial conditions x-1 ,x0 ∈(0,+∞) . We show that... 
Studies
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 04/2018, Volume 33, Issue 6, p. 65004
Comparative study on a novel Al2O3 -dielectric graded-barrier (GB) AlxGa1-xN/AlN/GaN/Si (x = 0.22 similar to 0.3) metal-oxide-semiconductor heterostructure... 
AlGaN/AlN/GaN | Ga | Al | graded barrier | MOS-HFET | ultrasonic spray pyrolysis deposition | N | O | GATE OXIDE | HFO2 | PHYSICS, CONDENSED MATTER | PASSIVATION | MOS-HFLT | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | Al2O3 | ENGINEERING, ELECTRICAL & ELECTRONIC | HEMTS | AlxGa1-xN
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/1999, Volume 74, Issue 22, pp. 3344 - 3346
The band gap of AlxGa1-xN is measured for the composition range 0 less than or equal to x<0.45; the resulting bowing parameter, b=+0.69 eV, is compared to 20... 
SAPPHIRE | PHYSICS, APPLIED | FILMS | PHOTOLUMINESCENCE | CHEMICAL-VAPOR-DEPOSITION | GROWTH | OPTICAL-PROPERTIES | STRAINED ALGAN | SPECTROSCOPIC ELLIPSOMETRY | EDGE | LAYERS
Journal Article
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), ISSN 1662-9752, 09/2016, Volume 897, pp. 1 - 1
This work presents theoretical demonstration of two-dimensional electron gas (2DEG) at the interface between Al 0.2 Ga 0.8 N and 4H-SiC, based on the... 
Heterostructure | high mobility | Silicon carbide | Photonic band gap | modeling | Scattering | HEMTs | Mathematical model | 4H-SiC | MODFETs | Nanotechnology | high density | High density | Modeling | High mobility | Electron mobility | Current voltage characteristics | Carrier density | Transconductance | Electrons | Electron gas
Conference Proceeding
by Xuan, HC and Zhang, YQ and Li, H and Han, PD and Wang, DH and Du, YW
Physica Status Solidi A: Applications and Materials Science, ISSN 1862-6300, 03/2015, Volume 212, Issue 3, pp. 680 - 685
The effect of variation in Ni/Sn ratio on martensitic transformation (MT) and magnetic properties was investigated in high-Mn content Mn sub(2)Ni sub(1.64-)xn... 
Martensitic transformations | Alloys | Tin | Nickel | Raw materials | Entropy | Magnetic properties | Curie temperature
Journal Article
physica status solidi (a), ISSN 1862-6300, 12/2011, Volume 208, Issue 12, pp. 2737 - 2740
The composition modulation of in In‐rich InxGa1−xN layers with an indium content as high as ∼67% was suppressed in plasma‐assisted molecular beam epitaxy on... 
nitride semiconductors | indium gallium nitride | phase separation | composition modulation | PHASE-SEPARATION | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | IMMISCIBILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | GAINN
Journal Article
APPLIED PHYSICS EXPRESS, ISSN 1882-0778, 12/2019, Volume 12, Issue 12, p. 124005
Herein, we present an analytical study of a random electric field induced by interface roughness in GaN/AlxGa1?xN multiple quantum wells (MQWs) grown on... 
GAN | PHYSICS, APPLIED | ALGAN
Journal Article
Thin Solid Films, ISSN 0040-6090, 04/2009, Volume 517, Issue 11, pp. 3315 - 3319
In this study, the quantum confinement effect on recombination dynamics and carrier localization in cubic InN (c-InN) and cubic In Ga N (c-In Ga N) low... 
Quantum confinement | Carrier localization | Cubic In | Recombination dynamics | Cubic InN | Quantum boxes | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | INGAN | MATERIALS SCIENCE, MULTIDISCIPLINARY | SIZE | DOTS | EXCITONS | WELLS | Cubic InxGa1-xN | MATERIALS SCIENCE, COATINGS & FILMS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2008, Volume 93, Issue 17, p. 172113
The zero-field spin splitting in AlxGa1-xN/GaN heterostructures with various Al compositions has been investigated at low temperatures and high magnetic... 
2-DIMENSIONAL ELECTRON-GAS | PHYSICS, APPLIED
Journal Article
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