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Nature Structural and Molecular Biology, ISSN 1545-9993, 01/2012, Volume 19, Issue 1, pp. 17 - 25
In higher eukaryotes, the dynamics of replisome components during fork collapse and restart are poorly understood. Here we have reconstituted replication fork... 
BUDDING YEAST | DORMANT ORIGINS | BIOCHEMISTRY & MOLECULAR BIOLOGY | POLYMERASE ALPHA | DAMAGE TOLERANCE | CELL BIOLOGY | S PHASE CHECKPOINT | REPAIR | BIOPHYSICS | RESTART | HOMOLOGOUS RECOMBINATION | CHROMOSOMAL DNA-REPLICATION | BREAK-INDUCED REPLICATION | Chromatin - metabolism | Xenopus Proteins - genetics | Male | Multiprotein Complexes - genetics | Minichromosome Maintenance Complex Component 2 | DNA-Binding Proteins - metabolism | MRE11 Homologue Protein | Multiprotein Complexes - metabolism | Proliferating Cell Nuclear Antigen - genetics | Chromatin Immunoprecipitation | Electrophoresis, Agar Gel | Cell Cycle Proteins - genetics | Female | DNA, Single-Stranded | DNA Helicases - genetics | Rad51 Recombinase - metabolism | Recombinant Proteins - metabolism | Rad51 Recombinase - genetics | Oocytes - metabolism | Xenopus laevis | Cell Cycle Proteins - metabolism | DNA Replication | DNA-Binding Proteins - genetics | Comet Assay | Blotting, Western | Carrier Proteins - genetics | DNA Helicases - metabolism | Animals | Carrier Proteins - metabolism | Protein Binding | Xenopus Proteins - metabolism | DNA Damage | Mutation | Proliferating Cell Nuclear Antigen - metabolism | Gene mutations | DNA | Physiological aspects | Research | Structure | Health aspects | Helicases | Enzymes | Eukaryotes | Molecular biology | Genomics | Deoxyribonucleic acid--DNA
Journal Article
Methods in molecular biology (Clifton, N.J.), 2011, Volume 745, pp. 437 - 445
A crucial process to ensure cell survival and genome stability is the correct replication of the genome. DNA replication relies on complex machinery whose... 
Animals | Electrophoresis, Agar Gel | Fluorescent Antibody Technique | DNA Replication - genetics | Ovum - chemistry | Xenopus laevis - genetics | DNA Repair - genetics | Blotting, Western | Genomic Instability - genetics
Journal Article
Molecular and Cellular Biology, ISSN 0270-7306, 07/2006, Volume 26, Issue 13, pp. 4843 - 4852
Recruitment of DNA polymerases onto replication origins is a crucial step in the assembly of eukaryotic replication machinery. A previous study in budding... 
Journal Article
Japanese journal of applied physics. Pt. 1, Regular papers & short notes, ISSN 0021-4922, 12/1999, Volume 38, Issue 12 A, pp. 6605 - 6610
Threading dislocations caused by coalescence of GaN islands in the initial stage of low-pressure metalorganic chemical vapor deposition (MOCVD) growth is... 
Buffer layer | Annealing | Threading dislocation | GaN | Sapphire | Nitridation | Low-pressure MOCVD | PHYSICS, APPLIED | QUALITY | annealing | nitridation | low-pressure MOCVD | DEPENDENCE | threading dislocation | THERMAL-TREATMENT | LASER-DIODES | buffer layer | GROWTH | sapphire
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 10/1999, Volume 86, Issue 7, pp. 3670 - 3675
The characteristics of an amorphous oxynitride layer formed by nitridation are studied with x-ray photoelectron spectroscopy in order to reveal the role of... 
BUFFER LAYER | ENERGY | PHYSICS, APPLIED | PLASMA NITRIDATION | CHEMICAL-VAPOR-DEPOSITION | EPITAXIAL-GROWTH | PULSED OPERATION | SUBSTRATE | CUBIC GAN | GALLIUM NITRIDE | C-PLANE SAPPHIRE | Usage | Diodes, Laser | Research | X-ray spectroscopy | Sapphires | Chemical vapor deposition
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 1998, Volume 189, pp. 254 - 258
Nitridation process of a sapphire surface was investigated with atomic force microscopy (AFM), reflection high-energy electron diffraction (RHEED), and X-ray... 
AFM | GaN initial process | Nitridation of sapphire | XPS | RHEED | CHEMICAL-VAPOR-DEPOSITION | GAN | SUBSTRATE SURFACE | GROWTH | CRYSTALLOGRAPHY | nitridation of sapphire
Journal Article
Journal Article
Journal of the Visualization Society of Japan, ISSN 0916-4731, 2003, Volume 23, Issue Supplement2, pp. 29 - 32
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 1996, Volume 169, Issue 1, pp. 185 - 189
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 1996, Volume 169, Issue 1, pp. 185 - 189
GaN has been grown on 3C-SiC/Si(001) at temperatures from 600 to 800°C by low pressure MOCVD using TMGa and NH , The grown films were characterized by X-ray... 
CRYSTALLOGRAPHY | NITRIDE | GAAS | MOLECULAR-BEAM EPITAXY | CUBIC GAN
Journal Article
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