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Journal Article
PLoS Genetics, ISSN 1553-7390, 10/2011, Volume 7, Issue 10
  Seckel syndrome is a recessively inherited dwarfism disorder characterized by microcephaly and a unique head profile. Genetically, it constitutes a... 
Medical research | Genes | Genetics | Mutation | Kinases | DNA repair
Journal Article
Human Genetics, ISSN 0340-6717, 2/2008, Volume 123, Issue 1, pp. 77 - 82
We report a consanguineous Pakistani family with seven affected individuals showing a syndromic form of congenital microcephaly. Clinical features of affected... 
Human Genetics | Internal Medicine | Molecular Medicine | Biomedicine | Metabolic Diseases | HUMAN GENOME | PROTEIN | MENTAL-RETARDATION | GENE | MUTATION | GENETICS & HEREDITY | SECKEL-SYNDROME | LOCUS | CHROMATID COHESION | Microcephaly - genetics | Humans | Male | Chromosome Mapping | Genes, Recessive | Syndrome | Chromosomes, Human, Pair 18 | Pedigree | Adolescent | Adult | Female | Abnormalities, Multiple - genetics | Genetic Linkage
Journal Article
SAE technical paper series, Volume 2013-01-1400.
The experimental methods focused on utilizing the newly developed NOVA induction heating and hardening manufacturing process as an adapted method to produce... 
Fatigue | Springs
eJournal
SAE technical paper series, Volume 2013-01-1400.
The experimental methods focused on utilizing the newly developed NOVA induction heating and hardening manufacturing process as an adapted method to produce... 
Fatigue | Springs
eJournal
Nature Materials, ISSN 1476-1122, 2015, Volume 14, Issue 2, pp. 160 - 163
The elimination of defects from SiC has facilitated its move to the forefront of the optoelectronics and power-electronics industries(1). Nonetheless, because... 
THERMOMETRY | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | NUCLEAR-MAGNETIC-RESONANCE | CHEMISTRY, PHYSICAL | STATE | QUBITS | Platforms | Optoelectronics | Spin transition | Silicon carbide | Coherence | Nanostructure | Electron spin | Recognition | Defects | Naturvetenskap | Natural Sciences | Kemi | Chemical Sciences
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2017, Volume 111, Issue 26, p. 262403
Neutrally charged divacancies in silicon carbide (SiC) are paramagnetic color centers whose long coherence times and near-telecom operating wavelengths make... 
PHYSICS, APPLIED | COHERENT CONTROL | ENTANGLEMENT | DIAMOND SPINS | QUBITS | Fysik | Atom and Molecular Physics and Optics | Physical Sciences | Naturvetenskap | Natural Sciences | Atom- och molekylfysik och optik
Journal Article
Materials Science Forum, ISSN 0255-5476, 05/2016, Volume 858, pp. 209 - 212
4H-SiC epilayers with very smooth surfaces were grown with high growth rates on 4° off-cut substrates using standard silane/propane chemistry. Specular... 
Atomic force microscopy | Silicon carbide | Epitaxial growth | Chemical vapor deposition | Silanes | Silicon | Etching | Propane | Substrates | Standards | Optimization
Journal Article
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), ISSN 1662-9752, 09/2016, Volume 897, pp. 1 - 1
In this study we have grown thick 4H-SiC epitaxial layers with different n-type doping levels in the range 1×10 15 cm -3 to mid 1×10 18 cm -3 , in order to... 
Chemistry | carrier lifetime | Epitaxial layers | Silicon carbide | epitaxial growth | chemical vapor deposition | Doping | Photoluminescence | Charge carrier lifetime | Auger recombination | Substrates | Epitaxial growth | Chemical vapor deposition | Carrier lifetime
Conference Proceeding
The New England Journal of Medicine, ISSN 0028-4793, 01/2018, Volume 378, Issue 1, pp. 11 - 21
Journal Article
Materials Science Forum, ISSN 0255-5476, 05/2016, Volume 858, pp. 125 - 128
Over 150 μm thick epilayers of 4H-SiC with long carrier lifetime have been grown with a chlorinated growth process. The carrier lifetime have been determined... 
Chlorine | Chemical vapor deposition | Carrier lifetime | Epitaxy | Origins | Chlorination | High density | Photoluminescence | Etching | Optical microscopes | Deep level transient spectroscopy
Journal Article
Materials Science Forum, ISSN 0255-5476, 05/2017, Volume 897, pp. 135 - 138
We report on a very low density (<5×1011 cm-2) of near-interface traps (NITs) at the Al2O3/4H-SiC interface estimated from capacitance-voltage (CV) analysis of... 
Gate dielectrics | Interface states | Near-interface traps | Aluminum oxide | Silicon carbide | Atomic layer deposition | Nitrous oxides | Silicon dioxide | Materials Engineering | Materialteknik
Journal Article
by Wang, Haidong and Wang, Linhong and Naghavi, Mohsen and Allen, Christine and Barber, Ryan M and Bhutta, Zulfiqar A and Carter, Austin and Casey, Daniel C and Charlson, Fiona J and Chen, Alan Zian and Chen, Wanqing and Coates, Matthew M and Coggeshall, Megan and Dandona, Lalit and Dandona, Rakhi and Dicker, Daniel J and Erskine, Holly E and Ferrari, Alize J and Fitzmaurice, Christina and Foreman, Kyle and Forouzanfar, Mohammad H and Fraser, Maya S and Fullman, Nancy and Gething, Peter W and Goldberg, Ellen M and Graetz, Nicholas and Haagsma, Juanita A and Hay, Simon I and Huynh, Chantal and Huynh, Grace and Johnson, Catherine O and Kassebaum, Nicholas J and Kinfu, Yohannes and Kulikoff, Xie Rachel and Kutz, Michael and Kyu, Hmwe H and Larson, Heidi J and Leung, Janni and Liang, Xiaofeng and Lim, Stephen S and Lind, Margaret and Lozano, Rafael and Marquez, Neal and Mensah, George A and Mikesell, Joe and Mokdad, Ali H and Mooney, Meghan D and Nguyen, Quyen Le and Nguyen, Grant and Nsoesie, Elaine and Pigott, David M and Pinho, Christine and Roth, Gregory A and Salomon, Joshua A and Sandar, Logan and Silpakit, Naris and Sligar, Amber and Sorensen, Reed J D and Stanaway, Jeffrey and Steiner, Caitlyn and Teeple, Stephanie and Thomas, Bernadette A and Troeger, Christopher and VanderZanden, Amelia and Vollset, Stein Emil and Wanga, Valentine and Whiteford, Harvey A and Wolock, Timothy and Zoeckler, Leo and Abate, Kalkidan Hassen and Abbafati, Cristiana and Abbas, Kaja M and Abd-Allah, Foad and Abera, Semaw Ferede and Abreu, Daisy M X and Abu-Raddad, Laith J and Abyu, Gebre Yitayih and Achoki, Tom and Adelekan, Ademola Lukman and Ademi, Zanfina and Adou, Arsène Kouablan and Adsuar, José C and Afanvi, Kossivi Agbelenko and Afshin, Ashkan and Agardh, Emilie Elisabet and Agarwal, Arnav and Agrawal, Anurag and Kiadaliri, Aliasghar Ahmad and Ajala, Oluremi N and Akanda, Ali Shafqat and Akinyemi, Rufus Olusola and Akinyemiju, Tomi F and Akseer, Nadia and Lami, Faris Hasan Al and Alabed, Samer and Al-Aly, Ziyad and Alam, Noore K M and Alam, Khurshid and Alasfoor, Deena and Aldhahri, Saleh Fahed and ... and GBD 015 Mortality and Causes Death and GBD 2015 Mortality and Causes of Death Collaborators and Högskolan Dalarna and Akademin Utbildning, hälsa och samhälle and Medicinsk vetenskap
The Lancet, ISSN 0140-6736, 10/2016, Volume 388, Issue 10053, pp. 1459 - 1544
Journal Article