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eBook
Applied Physics Letters, ISSN 0003-6951, 08/2007, Volume 91, Issue 8, pp. 082904 - 082904-3
In search of a proper passivation for high- k Ge metal-oxide-semiconductor devices, the authors have deposited high- k dielectric layers on Ge O 2 , grown at... 
OXIDATION | CYCLOTRON-RESONANCE PLASMA | PHYSICS, APPLIED
Journal Article
2016, ISBN 9783035710847, 395
eBook
Applied Physics Letters, ISSN 0003-6951, 2007, Volume 91, Issue 13, p. 133510
The authors show the implications that the free carrier trapping lifetime has on the capacitance-voltage (CV) characterization method applied to... 
PHYSICS, APPLIED
Journal Article
NANOTECHNOLOGY, ISSN 0957-4484, 11/2019, Volume 30, Issue 46, p. 465601
The increasing scientific and industry interest in 2D MX2 materials within the field of nanotechnology has made the single crystalline integration of large... 
TRANSISTOR | molecular beam epitaxy | WSe2 | GRAIN-BOUNDARIES | PHYSICS, APPLIED | PHOTOLUMINESCENCE | MX2 | MATERIALS SCIENCE, MULTIDISCIPLINARY | 2-DIMENSIONAL MATERIALS | GRAPHENE | surface reconstruction | NANOSCIENCE & NANOTECHNOLOGY | TRANSITION-METAL DICHALCOGENIDE | BILAYER | transition metal dichalcogenides | van der Waals epitaxy | SUBSTRATE | DYNAMICS | SCALE | sapphire
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 07/2009, Volume 86, Issue 7-9, pp. 1554 - 1557
In this paper we compare the interface trap distributions D (E) of sulfur treated Al O /In Ga As interfaces, which underwent MOS capacitor and transistor... 
InGaAs on InP | MOSFET | ALD | Inversion channel | III-V | Sulfur treatment | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Scientific Reports, ISSN 2045-2322, 12/2017, Volume 7, Issue 1, pp. 5016 - 7
Two-dimensional (2D) material based FETs are being considered for future technology nodes and high performance logic applications. However, a comprehensive... 
Phosphorus | Scaling | Energy | Nodes
Journal Article
2012, ISBN 9783037855270, 328
This volume covers various aspects of ultra-clean technology for the large-scale integration of semiconductors. These include cleaning and contamination... 
Electrical engineering | Surfaces | Congresses | Semiconductors
eBook
physica status solidi c, ISSN 1862-6351, 12/2017, Volume 14, Issue 12, p. n/a
In this paper, the deep levels found by Deep‐Level Transient Spectroscopy in Si‐O superlattices (SLs) on n‐type silicon are reported. Samples have been grown... 
dangling bonds | silicon‐oxygen superlattice | silicon | deep‐level transient spectroscopy | interface states | silicon-oxygen superlattice | deep-level transient spectroscopy | Silicon | Electron traps | Electron states | Bias | Superlattices | Electrons
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2007, Volume 54, Issue 9, pp. 2503 - 2511
Journal Article
Journal Article
Journal of Materials Chemistry. C, Materials for Optical and Electronic Devices, ISSN 2050-7526, 01/2018, Volume 6, Issue 23, pp. 6172 - 6178
SnS2 and SnS are two-dimensional (2D) semiconductors with distinct properties, as they exhibit a different type of conduction. They are of interest for... 
Thickness | Hydrogen sulfide | Organic chemistry | Optoelectronics | Semiconductor devices | Field effect transistors | Phase control | Tin disulfide | Catalysis | Chemical vapor deposition | Substrates | Nanoelectronics
Journal Article
2014, ISBN 303835242X, 331
Collection of selected, peer reviewed papers from the 12th InternationalSymposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 21-24,... 
Semiconductors | Congresses
eBook
physica status solidi (b), ISSN 0370-1972, 04/2017, Volume 254, Issue 4, pp. np - n/a
The presence of deep levels in a silicon–oxygen (Si–O) superlattice (SL) deposited on p‐type silicon substrates has been investigated by deep‐level transient... 
silicon | deep‐level transient spectroscopy | defects | superlattices | Schottky barrier | deep-level transient spectroscopy | OXYGEN SUPERLATTICES | PHYSICS, CONDENSED MATTER | DISLOCATIONS | STATES | CHEMICAL-VAPOR-DEPOSITION | ATOMIC LAYERS | GROWTH | Silicon | Chemical vapor deposition | Epitaxy | Spectrum analysis | Interlayers | Stacking faults | Barriers | Superlattices | Silicon substrates | Atomic structure | Defects
Journal Article
Nanotechnology, ISSN 0957-4484, 10/2010, Volume 21, Issue 43, pp. 435203 - 435203
We report a change in the semimetallic nature of single-layer graphene after exposure to oxygen plasma. The resulting transition from semimetallic to... 
PHYSICS, APPLIED | OXIDE | MATERIALS SCIENCE, MULTIDISCIPLINARY | RAMAN-SPECTROSCOPY | AB-INITIO | STATE | NANOSCIENCE & NANOTECHNOLOGY | GRAPHITE | BERRYS PHASE | ADSORPTION | CARBON NANOTUBES | SURFACE | GAS | Optoelectronics | Oxygen atoms | Graphene | Mathematical analysis | Lattices | Carbon | Density | Nanotechnology
Journal Article
Ultrasonics - Sonochemistry, ISSN 1350-4177, 01/2013, Volume 20, Issue 1, pp. 69 - 76
► Cavitation activity and particle removal can be significantly enhanced under pulsed sonication and gas supersaturation. ► The optimal pulse parameters are... 
Ultrasonic cleaning | Nonlinear acoustics | Sonochemistry | Acoustic cavitation | ACOUSTICS | FIELD | SIZE | EMISSION | CHEMISTRY, MULTIDISCIPLINARY | BUBBLES
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2016, Volume 63, Issue 11, pp. 4248 - 4254
The effective bandgap for heterojunction band-to-band tunneling (E g,eff ) is a crucial design parameter for a heterojunction tunneling FET (TFET). However,... 
Temperature dependence | TFETs | Photonic band gap | Current measurement | Esaki diode | heterojunction | Tunneling | Heterojunctions | Calibration | Band-to-band tunneling (BTBT) | tunneling field-effect transistor (TFET) | calibration | PHYSICS, APPLIED | GAP | FETS | ENGINEERING, ELECTRICAL & ELECTRONIC | Research | Chemical properties | Gallium arsenide | Electric properties
Journal Article
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