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Journal of Applied Physics, ISSN 0021-8979, 11/2017, Volume 122, Issue 19, p. 195102
In this paper, the electron mobility and sheet density of the two-dimensional electron gas (2DEG) in both air and argon environments at 600 °C were measured... 
Electron mobility | Aluminum compounds | Hall effect | Research | Analysis | Electric properties
Journal Article
1983, Shi bao shu xi, Volume 451, 562, v.
Book
1999, Di 1 ban., "Shi ji zhi wen" cong shu, ISBN 9787800403941, 3, 228
Book
physica status solidi (a), ISSN 1862-6300, 05/2015, Volume 212, Issue 5, pp. 1158 - 1161
Journal Article
physica status solidi (b), ISSN 0370-1972, 09/2016, Volume 253, Issue 9, pp. 1715 - 1720
We report the structural and electronic characterization of GaN on magnesium aluminate (MgAl2O4) (111) substrates using first-principles calculations. Atomic... 
termination | MgAl | GaN | surface energy | density functional theory | growth | polarity | BUFFER LAYER | PHYSICS, CONDENSED MATTER | SPINEL | FILMS | MgAl2O4 | DIODES | Nitrogen | Liquors | Chemical properties
Journal Article
by Zhang, Y and Smith, R. M and Hou, Y and Xu, B and Gong, Y and Bai, J and Wang, T
Applied Physics Letters, ISSN 0003-6951, 01/2016, Volume 108, Issue 3, p. 31108
The mechanism for the large Stokes Shifts of InGaN/GaN structures is under debate. Here, we report a systematic study on the Stokes shift of semi-polar ( 11 2... 
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2011, Volume 98, Issue 15, pp. 151102 - 151102-3
Green GaInN/GaN quantum well light-emitting diode (LED) wafers were grown on nanopatterned c -plane sapphire substrate by metal-organic vapor phase epitaxy.... 
OUTPUT POWER | PHYSICS, APPLIED
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 11/2017, Volume 122, Issue 19
In this paper, the electron mobility and sheet density of the two-dimensional electron gas (2DEG) in both air and argon environments at 600 °C were measured... 
Atomic force microscopy | Annealing | Strain relaxation | Photoluminescence | Surface roughness | Impact tests | Aluminum oxide | Electron states | Electron mobility | Oxidation | Dislocation pinning | Aluminum gallium nitrides | Argon | Heterostructures | Electron gas
Journal Article
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 11/2017, Volume 122, Issue 19
In this paper, the electron mobility and sheet density of the two-dimensional electron gas (2DEG) in both air and argon environments at 600 degrees C were... 
THERMAL-STABILITY | THIN-FILMS | PHYSICS, APPLIED | SI3N4 SURFACE-PASSIVATION | CRACK-HEALING BEHAVIOR | MOBILITY | HIGH-TEMPERATURE | STRAIN RELAXATION | 2-DIMENSIONAL ELECTRON-GAS | POLARIZATION | FIELD-EFFECT TRANSISTORS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2017, Volume 111, Issue 20, p. 203901
Two types of GaN based photoelectrodes using either horizontally aligned or vertically aligned nanopores have been fabricated by means of using an... 
LIGHT-EMITTING-DIODES | PHYSICS, APPLIED | SURFACE PASSIVATION | GROWN GAN | NANOWIRES | ARRAYS | WATER
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2012, Volume 100, Issue 1, pp. 013507 - 013507-3
High quality, nearly lattice-matched InAlN/GaN/InAlN/GaN double-channel heterostructures were grown on sapphire by... 
HEMTS | PHYSICS, APPLIED
Journal Article
Microwave and Optical Technology Letters, ISSN 0895-2477, 03/2019, Volume 61, Issue 3, pp. 605 - 609
This article designs a low‐phase noise 8.22 GHz GaN high electron‐mobility transistor (HEMT) oscillator in the WIN 0.25 μm GaN HEMT process. The oscillator... 
Q‐factor | 3‐path transformer | 8.22 GHz GaN HEMT oscillator | figure of merit | phase noise | Q-factor | 3-path transformer | LOW-VOLTAGE | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC | Liquors | Transformers | Power consumption | Noise | Feedback | Figure of merit
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2017, Volume 111, Issue 17, p. 173502
High-frequency enhancement-mode (E-mode) AlGaN/GaN high-electron-mobility transistors (HEMTs) with plasma oxidation technology (POT) were fabricated through... 
PHYSICS, APPLIED | PERFORMANCE
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2019, Volume 114, Issue 1, p. 13503
An obvious increase in the gate leakage current has been commonly observed in GaN HEMTs, after Plasma-enhanced chemical vapor deposition (PECVD) SiN... 
PHYSICS, APPLIED
Journal Article
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